公开(公告)号：US08310029B2

公开(公告)日：2012-11-13

申请号：US12801214

申请日：2010-05-27

申请人： Hajime Fujikura ,  Takeshi Eri

发明人： Hajime Fujikura ,  Takeshi Eri

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/0075

摘要： A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.

摘要翻译： III族氮化物半导体自立式衬底包括生长表面，包括单晶平面的生长表面的一半以上区域的一半以上。 单晶面包括从具有III族极性的C面或从M面向c轴或a轴方向以m轴或a轴方向倾斜的偏角。

公开(公告)号：US20110006397A1

公开(公告)日：2011-01-13

申请号：US12801214

申请日：2010-05-27

申请人： Hajime Fujikura ,  Takeshi Eri

发明人： Hajime Fujikura ,  Takeshi Eri

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/0075

摘要： A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.

摘要翻译： III族氮化物半导体自立式衬底包括生长表面，包括单晶平面的生长表面的一半以上区域的一半以上。 单晶面包括从具有III族极性的C面或从M面向c轴或a轴方向以m轴或a轴方向倾斜的偏角。

公开(公告)号：US08102026B2

公开(公告)日：2012-01-24

申请号：US12556635

申请日：2009-09-10

申请人： Takeshi Eri ,  Takeshi Meguro

发明人： Takeshi Eri ,  Takeshi Meguro

IPC分类号： H01L29/20

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254

摘要： To provide a group-III nitride semiconductor freestanding substrate, with carrier concentration of a peripheral part of a n-type group-III nitride semiconductor freestanding substrate set to be lower than the carrier concentration inside of the peripheral part. In this freestanding substrate, preferably value Δσ obtained by dividing a difference between a maximum value of the carrier concentration and a minimum value of the carrier concentration in a surface of the freestanding substrate by the maximum value of the carrier concentration is greater than 0.05, and the carrier concentration in any place in the surface of the freestanding substrate exceeds 5.0×1017 cm−3.

摘要翻译： 为了提供将n型III族氮化物半导体独立式衬底的周边部分的载流子浓度设定为低于周边部分内部的载流子浓度的III族氮化物半导体自由基板。 在这种独立的底物中，优选的值为＆amp; 通过将载体浓度的最大值和独立基板的表面中的载流子浓度的最小值之间的差除以载流子浓度的最大值而得到的值大于0.05，并且载流子浓度在 独立基板的表面超过5.0×1017cm-3。

公开(公告)号：US20060046511A1

公开(公告)日：2006-03-02

申请号：US10519152

申请日：2003-06-26

申请人： Masatomo Shibata ,  Yuichi Oshima ,  Takeshi Eri ,  Akira Usui ,  Haruo Sunagawa

发明人： Masatomo Shibata ,  Yuichi Oshima ,  Takeshi Eri ,  Akira Usui ,  Haruo Sunagawa

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262

摘要： A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

摘要翻译： 用于生长半导体的晶体层的衬底的结构，特别是III族氮化物半导体及其制造方法。 基底在基底上包括两个多孔层。 第一多孔激光器（最外层）的孔的平均开口直径小于第二多孔层中比第一多孔层更靠近基底的孔的平均直径。 第一和第二多孔层的体积孔隙率为10〜90％。 多于50％的第一多孔层的孔从第一多孔层的表面延伸并到达第一和第二多孔层之间的界面。 即使通过常规的晶体生长方法，可以容易地在多孔基材上生长低缺陷密度的外延晶体。

公开(公告)号：US08466471B2

公开(公告)日：2013-06-18

申请号：US12155759

申请日：2008-06-09

申请人： Takayuki Suzuki ,  Takeshi Meguro ,  Takeshi Eri

发明人： Takayuki Suzuki ,  Takeshi Meguro ,  Takeshi Eri

IPC分类号： H01L27/15

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075

摘要： A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 by adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.

公开(公告)号：US20100258812A1

公开(公告)日：2010-10-14

申请号：US12556635

申请日：2009-09-10

申请人： Takeshi Eri ,  Takeshi Meguro

发明人： Takeshi Eri ,  Takeshi Meguro

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254

摘要： To provide a group-III nitride semiconductor freestanding substrate, with carrier concentration of a peripheral part of a n-type group-III nitride semiconductor freestanding substrate set to be lower than the carrier concentration inside of the peripheral part. In this freestanding substrate, preferably value Δσ obtained by dividing a difference between a maximum value of the carrier concentration and a minimum value of the carrier concentration in a surface of the freestanding substrate by the maximum value of the carrier concentration is greater than 0.05, and the carrier concentration in any place in the surface of the freestanding substrate exceeds 5.0×1017cm−3.

摘要翻译： 为了提供将n型III族氮化物半导体独立式衬底的周边部分的载流子浓度设定为低于周边部分内部的载流子浓度的III族氮化物半导体自由基板。 在这种独立的底物中，优选值为＆D; 通过将载体浓度的最大值和独立基板的表面中的载流子浓度的最小值之间的差除以载流子浓度的最大值而得到的值大于0.05，并且载流子浓度在 独立基板的表面超过5.0×1017cm-3。

公开(公告)号：US07829913B2

公开(公告)日：2010-11-09

申请号：US10519152

申请日：2003-06-26

申请人： Masatomo Shibata ,  Yuichi Oshima ,  Takeshi Eri ,  Akira Usui ,  Haruo Sunagawa

发明人： Masatomo Shibata ,  Yuichi Oshima ,  Takeshi Eri ,  Akira Usui ,  Haruo Sunagawa

IPC分类号： H01L27/01

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262

摘要： A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

摘要翻译： 用于生长半导体的晶体层的衬底的结构，特别是III族氮化物半导体及其制造方法。 基底在基底上包括两个多孔层。 第一多孔激光器（最外层）的孔的平均开口直径小于第二多孔层中比第一多孔层更靠近基底的孔的平均直径。 第一和第二多孔层的体积孔隙率为10〜90％。 多于50％的第一多孔层的孔从第一多孔层的表面延伸并到达第一和第二多孔层之间的界面。 即使通过常规的晶体生长方法，可以容易地在多孔基材上生长低缺陷密度的外延晶体。

公开(公告)号：US20090160026A1

公开(公告)日：2009-06-25

申请号：US12155759

申请日：2008-06-09

申请人： Takayuki Suzuki ,  Takeshi Meguro ,  Takeshi Eri

发明人： Takayuki Suzuki ,  Takeshi Meguro ,  Takeshi Eri

IPC分类号： H01L21/20 ,  H01L29/20

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075

摘要： A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 by adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.

摘要翻译： 氮化物半导体自支撑衬底在平行于衬底的表面和衬底内部的截面中包括氮化物半导体晶体和具有不小于10 / cm 2且不大于600 / cm 2的密度的反转畴。 一种制造氮化物半导体独立基板的方法包括：通过调节氮化物半导体晶体生长步骤，在氮化物半导体晶体生长步骤中，通过调节密度不小于10 / cm 2且不大于600 / 在氮化物半导体晶体的初始生长阶段的生长条件，以及用于从氮化物半导体衬底分离生长的氮化物半导体晶体与分离步骤。