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    NONAQUEOUS ELECTROLYTE BATTERY
    2.
    发明申请
    NONAQUEOUS ELECTROLYTE BATTERY 失效
    非电解电解质电池

    公开(公告)号：US20090274949A1

    公开(公告)日：2009-11-05

    申请号：US12430362

    申请日：2009-04-27

    申请人： Takeshi Meguro

    发明人： Takeshi Meguro

    IPC分类号： H01M2/12

    CPC分类号： H01M2/1229 ,  H01M2/02 ,  H01M2/0404

    摘要： A nonaqueous electrolyte battery includes an outer case having one open end portion, a battery element held in the outer case, and a battery lid which is disposed on the one open end portion and which is provided with a protrusion portion protruded toward the outside of the battery, at least two opening portions disposed in the protrusion portion, and release portions disposed adjoining the respective opening portions so as to deform in accordance with an increase in internal pressure of the battery.

    摘要翻译： 非水电解质电池包括具有一个开口端部的外部壳体，保持在外部壳体中的电池元件和设置在一个开口端部上的电池盖，并且设置有朝向外部的外部突出的突出部分 电池，设置在所述突出部中的至少两个开口部，以及与各个开口部相邻配置的释放部，以根据所述电池的内部压力的增加而变形。

    Nitride semiconductor free-standing substrate and method for making same
    3.
    发明申请
    Nitride semiconductor free-standing substrate and method for making same 有权
    氮化物半导体自支撑衬底及其制造方法

    公开(公告)号：US20090160026A1

    公开(公告)日：2009-06-25

    申请号：US12155759

    申请日：2008-06-09

    申请人： Takayuki Suzuki ,  Takeshi Meguro ,  Takeshi Eri

    发明人： Takayuki Suzuki ,  Takeshi Meguro ,  Takeshi Eri

    IPC分类号： H01L21/20 ,  H01L29/20

    CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075

    摘要： A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 by adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.

    摘要翻译： 氮化物半导体自支撑衬底在平行于衬底的表面和衬底内部的截面中包括氮化物半导体晶体和具有不小于10 / cm 2且不大于600 / cm 2的密度的反转畴。 一种制造氮化物半导体独立基板的方法包括：通过调节氮化物半导体晶体生长步骤，在氮化物半导体晶体生长步骤中，通过调节密度不小于10 / cm 2且不大于600 / 在氮化物半导体晶体的初始生长阶段的生长条件，以及用于从氮化物半导体衬底分离生长的氮化物半导体晶体与分离步骤。

    Nitride semiconductor substrate and method of making same
    4.
    发明申请
    Nitride semiconductor substrate and method of making same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US20080157282A1

    公开(公告)日：2008-07-03

    申请号：US11977704

    申请日：2007-10-25

    申请人： Takayuki SUZUKI ,  Takeshi MEGURO

    发明人： Takayuki SUZUKI ,  Takeshi MEGURO

    IPC分类号： H01L21/8252 ,  H01L29/20

    CPC分类号： C30B33/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614

    摘要： A method of making a nitride semiconductor substrate having the steps of providing a free-standing substrate that is of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, attaching a metal to the penetrating pit or the penetrating crack, the metal being adapted to be nitrided, and nitriding the metal to form a nitride that seals the penetrating pit or the penetrating crack. A nitride semiconductor substrate has a free-standing substrate that is formed of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, and a metal nitride that seals the penetrating pit or the penetrating crack. The metal nitride is formed of GaN, InN and AlN.

    摘要翻译： 一种制造氮化物半导体衬底的方法，其具有以下步骤：提供具有氮化物半导体的自立式衬底，并且具有从自立式的顶表面到后表面穿透的穿透坑和穿透裂纹中的一种 基板，将金属附着到穿透坑或穿透裂缝，金属适于被氮化，并且氮化金属以形成密封穿透坑或穿透裂纹的氮化物。 氮化物半导体衬底具有由氮化物半导体形成的自立式衬底，并且具有从自立式衬底的顶表面到后表面穿透的穿透坑和穿透裂纹中的一种;以及金属氮化物 密封穿透坑或穿透裂缝。 金属氮化物由GaN，InN和AlN形成。

    Method for manufacturing a discharge tube
    6.
    发明授权
    Method for manufacturing a discharge tube 失效

    公开(公告)号：US06568216B2

    公开(公告)日：2003-05-27

    申请号：US10193951

    申请日：2002-07-09

    申请人： Takeshi Meguro ,  Masaji Sakamoto ,  Kenji Hirai ,  Motomi Sakoda

    发明人： Takeshi Meguro ,  Masaji Sakamoto ,  Kenji Hirai ,  Motomi Sakoda

    IPC分类号： C03B23057

    CPC分类号： C03B23/043 ,  C03B23/057 ,  C03B23/099 ,  H01J9/265

    摘要： A method for manufacturing a discharge tube, including heating a quartz tube by irradiation and closing it shut, is presented, in which variation of the heating temperature of the quartz tube can be reduced. Laser light is irradiated on a portion of the quartz tube, and in the step of sealing the portion of the quartz tube onto which laser light has been irradiated, the laser light is scanned while oscillating back and forth. The intensity of the laser light is controlled such that the intensity of the laser light when the size of a displacement of the laser light is maximal is smaller than the intensity of the laser light when the size of the displacement of the laser light is minimal.

    Dielectric filter
    8.
    发明授权
    Dielectric filter 失效
    介质过滤器

    公开(公告)号：US4450421A

    公开(公告)日：1984-05-22

    申请号：US393534

    申请日：1982-06-30

    申请人： Takeshi Meguro ,  Yukio Ito

    发明人： Takeshi Meguro ,  Yukio Ito

    IPC分类号： H01P1/205 ,  H01P7/00

    CPC分类号： H01P1/2056

    摘要： A comb-line type dielectric filter in which a plurality of resonator holes are made in a dielectric block at predetermined intervals and coupling adjustment holes are made between the resonator holes, the interior surfaces of the resonator holes and the surface of the dielectric block being entirely or partly covered with a conductor film. The coupling adjustment holes are disposed apart from the line joining the centers of the resonator holes, and a coupling adjusting member made of metal or dielectric material is inserted into each coupling adjustment hole.

    摘要翻译： 梳状线路型介质滤波器，其中在介质块中以预定间隔形成多个谐振器孔，并且在谐振器孔之间形成耦合调整孔，谐振器孔的内表面和介质块的表面完全 或部分覆盖有导体膜。 耦合调节孔与连接谐振器孔的中心的线分开设置，并且由金属或介电材料制成的耦合调节构件插入到每个耦合调节孔中。

    Dielectric filter
    9.
    发明授权
    Dielectric filter 失效
    介质过滤器

    公开(公告)号：US4410868A

    公开(公告)日：1983-10-18

    申请号：US279461

    申请日：1981-07-01

    申请人： Takeshi Meguro ,  Yukio Ito ,  Bun-ichi Miyamoto

    发明人： Takeshi Meguro ,  Yukio Ito ,  Bun-ichi Miyamoto

    IPC分类号： H01P1/205 ,  H01P1/208 ,  H01P7/04 ,  H01P7/06

    CPC分类号： H01P1/2056

    摘要： A dielectric filter in which a plurality of holes are made at predetermined intervals in a dielectric block of small dielectric loss, and a conductor film is formed on the surface of the dielectric block including the interior surfaces of the holes to constitute resonators using the conductor film on the interior surface of each hole as an inner conductor of the resonator and the conductive film on the outer peripheral surface of the dielectric block as an outer conductor, the resonance frequency of the resonators being based on the depth of each hole.

    摘要翻译： 一种电介质滤波器，其中在介电块介质损耗小的介质块中以预定的间隔形成多个孔，并且在包括孔的内表面的介电块的表面上形成导体膜，以构成使用导体膜的谐振器 在作为谐振器的内导体的每个孔的内表面上，作为外部导体的介质块的外周表面上的导电膜，谐振器的谐振频率基于每个孔的深度。

    Nitride semiconductor substrate
    10.
    发明申请
    Nitride semiconductor substrate 有权
    氮化物半导体衬底

    公开(公告)号：US20100084745A1

    公开(公告)日：2010-04-08

    申请号：US12379588

    申请日：2009-02-25

    申请人： Takeshi Meguro

    发明人： Takeshi Meguro

    IPC分类号： H01L29/00 ,  H01L29/20 ,  H01L33/00

    CPC分类号： C30B25/02 ,  C30B29/403

    摘要： A nitride semiconductor substrate has a first surface forming a principal surface of the substrate. A first edge is formed by beveling at least a portion of an edge of the first surface of the substrate. A scattering region is formed in at least a portion of the first edge. The scattering region scatters more external incident light than the first surface.

    摘要翻译： 氮化物半导体衬底具有形成衬底主表面的第一表面。 通过使衬底的第一表面的边缘的至少一部分倾斜来形成第一边缘。 在第一边缘的至少一部分中形成散射区域。 散射区域比第一表面散射更多的外部入射光。