公开(公告)号：US08435896B2

公开(公告)日：2013-05-07

申请号：US13039723

申请日：2011-03-03

申请人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

发明人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/16

摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

摘要翻译： 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物，包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地，非糖水溶性聚合物; 任选地，式I的水溶性酸化合物，其中R选自氢和C 1-5烷基，并且其中x是1或2; 任选地，络合剂; 任选地，氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外，提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法，包括：提供基材，其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸，氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

公开(公告)号：US08440097B2

公开(公告)日：2013-05-14

申请号：US13039705

申请日：2011-03-03

申请人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

发明人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/16

摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

摘要翻译： 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物，包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地，非糖水溶性聚合物; 任选地，式I的水溶性酸化合物，其中R选自氢和C 1-5烷基，并且其中x是1或2; 任选地，络合剂; 任选的氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外，提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法，包括：提供基板，其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸，氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

公开(公告)号：US20120225556A1

公开(公告)日：2012-09-06

申请号：US13039705

申请日：2011-03-03

申请人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

发明人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

IPC分类号： H01L21/306 ,  C09K3/14 ,  C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/16

摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

摘要翻译： 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物，包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地，非糖水溶性聚合物; 任选地，式I的水溶性酸化合物，其中R选自氢和C 1-5烷基，并且其中x是1或2; 任选地，络合剂; 任选地，氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外，提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法，包括：提供基板，其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸，氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

公开(公告)号：US20120225555A1

公开(公告)日：2012-09-06

申请号：US13039723

申请日：2011-03-03

申请人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

发明人： Hamed Lakrout ,  Jinjie Shi ,  Joseph Letizia ,  Xu Li ,  Thomas H. Kalantar ,  Francis Kelley ,  J. Keith Harris ,  Christopher J. Tucker

IPC分类号： H01L21/306 ,  C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/16

摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

摘要翻译： 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物，包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地，非糖水溶性聚合物; 任选地，式I的水溶性酸化合物，其中R选自氢和C 1-5烷基，并且其中x是1或2; 任选地，络合剂; 任选地，氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外，提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法，包括：提供基材，其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸，氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。

公开(公告)号：US20050136671A1

公开(公告)日：2005-06-23

申请号：US10742961

申请日：2003-12-22

申请人： Wendy Goldberg ,  Francis Kelley ,  John Quanci ,  Joseph So ,  Terence Thomas ,  Hongyu Wang

发明人： Wendy Goldberg ,  Francis Kelley ,  John Quanci ,  Joseph So ,  Terence Thomas ,  Hongyu Wang

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  C23F3/06 ,  H01L21/304 ,  H01L21/321 ,  B24D3/00 ,  B24D3/02 ,  B24D11/00 ,  B24D17/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23F3/06 ,  C09G1/02 ,  C09G1/04 ,  H01L21/3212

摘要： The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising by weight percent 1 to 15 oxidizer, 0.1 to 1 inhibitor for a nonferrous metal, 0.05 to 3 complexing agent for the nonferrous metal, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 modified cellulose, 0.05 to 10 phosphorus-containing compound and 0 to 10 abrasive, wherein the phosphorus-containing compound increases removal of the copper.

摘要翻译： 本发明提供一种水性组合物，其用于在至少小于20.68kPa的向下压力下在半导体晶片上抛光铜，其包含1至15重量％的氧化剂，0.1至1个有色金属抑制剂，0.05至3个络合物 有色金属的试剂，0.01〜5个羧酸聚合物，0.01〜5个改性纤维素，0.05〜10个含磷化合物和0〜10个研磨剂，其中含磷化合物增加了铜的去除。

公开(公告)号：US20060000151A1

公开(公告)日：2006-01-05

申请号：US10882568

申请日：2004-07-01

申请人： Francis Kelley ,  John Quanci ,  Joseph So ,  Hongyu Wang

发明人： Francis Kelley ,  John Quanci ,  Joseph So ,  Hongyu Wang

IPC分类号： B24D3/00 ,  B24D11/00

CPC分类号： C09G1/04 ,  H01L21/3212

摘要： The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

摘要翻译： 本发明提供了一种含有金属的半导体晶片的含水组合物，该半导体晶片含有氧化剂，有色金属抑制剂，有色金属络合剂，改性纤维素，0.001〜10重量％的第一共聚物和 第二共聚物和平衡水。

公开(公告)号：US20050211951A1

公开(公告)日：2005-09-29

申请号：US10809535

申请日：2004-03-24

申请人： Francis Kelley ,  John Quanci ,  Hongyu Wang

发明人： Francis Kelley ,  John Quanci ,  Hongyu Wang

IPC分类号： B24D3/02 ,  C09F1/00 ,  C09G1/02 ,  C23F1/00 ,  C23F3/06 ,  H01L21/321

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/06

摘要： The present invention provides an aqueous composition useful for polishing copper interconnects on a semiconductor wafer comprising by weight percent up to 25 oxidizer, 0.05 to 1 inhibitor for a nonferrous metal, 0.01 to 5 complexing agent for the nonferrous metal, 0.01 to 5 modified cellulose, and balance water, wherein the composition is free of polyacrylic acid, the amount of modified cellulose providing a copper removal function and a wafer clear of copper.

摘要翻译： 本发明提供了一种用于抛光半导体晶片上的铜互连的水性组合物，包括重量百分数至多25种氧化剂，0.05至1种有色金属抑制剂，0.01至5种有色金属络合剂，0.01至5种改性纤维素， 和平衡水，其中组合物不含聚丙烯酸，提供铜去除功能的改性纤维素的量和不含铜的晶片。

公开(公告)号：US20060000150A1

公开(公告)日：2006-01-05

申请号：US10882567

申请日：2004-07-01

申请人： Francis Kelley ,  John Quanci ,  Joseph So ,  Hongyu Wang

发明人： Francis Kelley ,  John Quanci ,  Joseph So ,  Hongyu Wang

IPC分类号： B24B1/00 ,  B24D3/00

CPC分类号： H01L21/3212 ,  C09G1/04

摘要： The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

摘要翻译： 本发明提供了一种水性组合物，其用于在半导体晶片上抛光有色金属互连物，其包含氧化剂，有色金属抑制剂，有色金属络合剂，改性纤维素，丙烯酸和甲基丙烯酸的0.01〜5重量％共聚物， 和平衡水，其中丙烯酸和甲基丙烯酸的共聚物的单体比例（丙烯酸/甲基丙烯酸）在1:30至30:1的范围内，共聚物的分子量在1K至1000K的范围内。