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    Barrier polishing solution
    4.
    发明申请
    Barrier polishing solution 有权
    阻隔抛光液

    公开(公告)号：US20050236601A1

    公开(公告)日：2005-10-27

    申请号：US10830268

    申请日：2004-04-21

    申请人： Zhendong Liu ,  John Quanci ,  Robert Schmidt ,  Terence Thomas

    发明人： Zhendong Liu ,  John Quanci ,  Robert Schmidt ,  Terence Thomas

    IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  C09K13/00 ,  B44C1/22 ,  H01L21/302

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

    摘要： The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

    摘要翻译： 在有侵蚀电介质的有色互连金属的存在下，抛光溶液可用于优先除去阻挡材料。 抛光溶液包含0至20重量％的氧化剂，至少0.001重量％的抑制剂，用于降低有色互连金属的去除速率，10ppb至4重量％的络合剂，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

    Compositions and methods for polishing copper
    5.
    发明申请
    Compositions and methods for polishing copper 审中-公开
    抛光铜的组合物和方法

    公开(公告)号：US20050104048A1

    公开(公告)日：2005-05-19

    申请号：US10712446

    申请日：2003-11-13

    申请人： Terence Thomas ,  Joseph So

    发明人： Terence Thomas ,  Joseph So

    IPC分类号： B24B37/00 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/304 ,  H01C1/00 ,  H01B1/02

    CPC分类号： C09G1/04

    摘要： The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer comprising by weight percent 1 to 15 oxidizer, 0.1 to 1 inhibitor for a nonferrous metal, 0.05 to 3 complexing agent for the nonferrous metal, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 modified cellulose, 0.0001 to 2 salt having a cationic and an anionic component, and balance water, the salt reducing noise level from vibration between the wafer and a polishing pad.

    摘要翻译： 本发明提供了一种用于在半导体晶片上抛光铜的水性组合物，其包含1至15重量％的氧化剂，0.1至1个有色金属抑制剂，0.05-3个有色金属络合剂，0.01至5个羧酸聚合物， 0.01至5个改性纤维素，0.0001至2个具有阳离子和阴离子组分的盐，以及平衡水，所述降低的晶片和抛光垫之间振动的噪声水平。

    Calculating apparatus having a plurality of stages
    6.
    发明申请
    Calculating apparatus having a plurality of stages 有权

    公开(公告)号：US20060149988A1

    公开(公告)日：2006-07-06

    申请号：US11327725

    申请日：2006-01-06

    申请人： Terence Thomas ,  Stephen Davis

    发明人： Terence Thomas ,  Stephen Davis

    IPC分类号： G06F1/12

    CPC分类号： G06F7/728 ,  G06F1/10 ,  G06F7/00 ,  G06F2207/3884

    摘要： A calculating apparatus, or system, having a plurality of stages, such as in a pipeline arrangement, has the clocking rail or conductor positioned alongside the stages. With a large number, i.e., hundreds, of stages arranged in parallel sub-arrays, the clocking conductor is snaked alongside the sub-arrays. In individual stages it is arranged that the shortest of the two calculations taking place in a stage, takes place in the return path. An array can be divided into separate sections for independent processing.

    Polymeric barrier removal polishing slurry
    7.
    发明申请
    Polymeric barrier removal polishing slurry 有权
    聚合物屏障去除抛光浆料

    公开(公告)号：US20070051917A1

    公开(公告)日：2007-03-08

    申请号：US11504508

    申请日：2006-08-15

    申请人： Terence Thomas ,  Qianqiu Ye

    发明人： Terence Thomas ,  Qianqiu Ye

    IPC分类号： C09K13/00 ,  C09K13/06

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

    摘要： The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.

    摘要翻译： 含水浆料可用于具有铜互连的化学机械抛光半导体衬底。 含水浆料包括重量百分数，0.01至25种氧化剂，0.1至50种磨料颗粒，0.001至3种聚乙烯吡咯烷酮，0.01至10种用于减少铜互连静电蚀刻的抑制剂，0.001至5种含磷化合物，用于提高去除率 的铜互连，在抛光过程中形成0.001至10个络合剂并平衡水; 并且所述含水浆料的pH至少为8。