Process for making beta-zinc diphosphide monocrystals (whiskers)
    3.
    发明授权
    Process for making beta-zinc diphosphide monocrystals (whiskers) 失效
    制备β-Zn二磷化物单晶(晶须)的方法

    公开(公告)号:US4692203A

    公开(公告)日:1987-09-08

    申请号:US899941

    申请日:1986-08-25

    IPC分类号: C01B25/08 C30B23/00 C30B29/10

    CPC分类号: C30B23/00 C30B29/10

    摘要: .beta.-zinc diphosphide monocrystals (.beta.-ZnP.sub.2) (whiskers) having a diameter of at least 7 mm are made. To this end, a quartz ampoule is filled up to 70-90% its volume with polycrystalline .beta.-ZnP.sub.2 ; the ampoule is sealed and drawn in upright position at a velocity of 0.5-2.5 mm/day during a period of 24-120 days through a kiln; the temperature outline from below to above in the kiln is defined by a lower inlet temperature of 580.degree.-780.degree. C., a mean maximum temperature of 800.degree.-950.degree. C. and an upper outlet temperature of 350.degree.-400.degree. C.; the ampoule coming from the furnace is crushed and .beta.-ZnP.sub.2 condensed into a monocrystal via the gas phase by sublimation into the upper ampoule portion is removed.

    摘要翻译: 制成直径至少为7毫米的β-二氧化锌单晶(β-ZnP2)(晶须)。 为此,用多晶β-ZnP2将石英安瓿填充至其体积的70-90%; 通过窑将安瓿密封并以直径为0.5-2.5mm /日的速度在24-120天的时间内被拉伸; 窑内温度范围从下至上由580℃-780℃的较低的入口温度定义,平均最高温度为800-950℃,上出口温度为350-400℃ 。 将来自炉的安瓿压碎,并且通过气相通过升华将β-ZnP2冷凝成单晶通过升华进入上部安瓿部分。

    Process for the currentless deposition of electropositive metal layers
on the surfaces of less electropositive metals
    5.
    发明授权
    Process for the currentless deposition of electropositive metal layers on the surfaces of less electropositive metals 失效
    在正电性较小的金属表面上无电沉积正电性金属层的方法

    公开(公告)号:US4908241A

    公开(公告)日:1990-03-13

    申请号:US222386

    申请日:1988-07-21

    CPC分类号: C23C18/42 C23C18/38

    摘要: The present invention provides a process for the currentless deposition oflectropositive metal layers on to appropriate less electropositive metals by contacting an object to be coated with a coating bath, wherein a coating bath is used which contains a metal complex obtained by reacting a monovalent electropositive metal halide with a base, which is capable of complex formation with the electropositive metal, and a hydrohalic acid.The present invention also provides a coating bath for the currentless deposition of electropositive metal layers on to less electropositive metals, wherein said bath contains an electropositive metal complex obtained by reacting a monovalent electropositive metal halide with a base which is capable of complex formation with the electropositive metal and a hydrohalic acid.Furthermore, the present invention provides an electropositive metal complex, obtainable by the reaction of a monovalent electropositive metal halide with a base which is capable of complex formation with the electropositive metal and a hydrohalic acid, followed by precipitation from the reaction mixture.

    摘要翻译: 本发明提供了一种通过使待涂覆物体与涂层浴接触而使正电性金属层无电沉积到适当的少正电性金属的方法,其中使用包含通过使单价正电性金属 具有能与正电性金属复合形成的碱的卤化物和氢卤酸。 本发明还提供了一种用于将正电性金属层无电沉积至较少正电性金属的涂层浴,其中所述浴含有通过使正电性金属卤化物与能够与正电性复合形成的碱反应获得的正电性金属络合物 金属和氢卤酸。 此外,本发明提供一种正电性金属络合物,其可以通过使一价正电性金属卤化物与能与正电性金属和氢卤酸形成复合物的碱反应,然后从反应混合物中沉淀而得到。