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公开(公告)号：US08860025B2
公开(公告)日：2014-10-14
申请号：US13227206
申请日：2011-09-07
IPC分类号： H01L29/861 , H01L21/331 , H01L29/739 , H01L29/78 , H01L29/10 , H01L29/66 , H01L29/06 , H01L29/423
CPC分类号： H01L21/02576 , H01L21/302 , H01L29/0626 , H01L29/0692 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/6609 , H01L29/66136 , H01L29/7803 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.
摘要翻译： 半导体器件包括半导体二极管。 半导体二极管包括形成在漂移区中或漂移区上的漂移区和第一导电类型的第一半导体区。 第一半导体区域经由半导体本体的第一表面电耦合到第一端子。 半导体二极管包括电耦合到第一端子的第二导电类型的沟道区，其中沟道区的底部与第一半导体区相邻。 沟道区的第一侧邻接第一半导体区。
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公开(公告)号：US08829562B2
公开(公告)日：2014-09-09
申请号：US13556335
申请日：2012-07-24
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/66 , H01L29/1095 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.
摘要翻译： 半导体器件包括从第一表面延伸到半导体本体的漂移区的沟槽。 半导体器件还包括在沟槽中的栅极电极和与沟槽的侧壁相邻的主体区域。 半导体器件还包括沟槽中的电介质结构。 电介质结构包括沟槽下部的高k电介质。 高k电介质包括比SiO2更高的介电常数。 在垂直于第一表面的垂直方向上的高k电介质的延伸在沟槽的底侧和体区的底侧与沟槽的侧壁相邻的水平之间被限制。
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3.发明授权Soft switching semiconductor component with high robustness and low switching losses 有权软开关半导体元件具有高鲁棒性和低开关损耗公开(公告)号：US07812427B2
公开(公告)日：2010-10-12
申请号：US11757451
申请日：2007-06-04
IPC分类号： H01L29/06
CPC分类号： H01L29/861 , H01L21/263 , H01L29/063 , H01L29/7395 , H01L29/74
摘要： A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.
摘要翻译： 半导体部件包括半导体主体和用作后侧发射极的第一导电类型的第二半导体区。 第二半导体区域之前是与第一导电类型相反的多个第二导电类型的第三半导体区域。 第三半导体区域在横向彼此间隔开。 此外，设置在半导体本体内的是与第二半导体区间隔开的场阻挡区域，从而减小朝向第二半导体区域的方向的电场。
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公开(公告)号：US09105682B2
公开(公告)日：2015-08-11
申请号：US13036088
申请日：2011-02-28
IPC分类号： H01L29/739 , H01L29/744 , H01L29/06 , H01L29/10 , H01L29/861 , H01L29/87
CPC分类号： H01L29/744 , H01L29/0607 , H01L29/1016 , H01L29/8611 , H01L29/87
摘要： Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.
摘要翻译： 公开了一种半导体部件，其包括半导体本体，在半导体主体中具有第一导电类型的第一发射极区域，在半导体主体的垂直方向上与第一发射极区域间隔开的第二导电类型的第二发射极区域， 布置在第一发射极区域和第二发射极区域之间的一种导电类型的基极区域以及与基极区域相同导电类型的至少两个较高掺杂区域并且布置在基极区域中。 所述至少两个较高掺杂区域在所述半导体主体的横向方向上彼此间隔开，并且仅通过所述基极区域的一部分彼此分离。
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公开(公告)号：US20140027812A1
公开(公告)日：2014-01-30
申请号：US13556335
申请日：2012-07-24
IPC分类号： H01L29/78 , H01L29/739
CPC分类号： H01L29/66 , H01L29/1095 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.
摘要翻译： 半导体器件包括从第一表面延伸到半导体本体的漂移区的沟槽。 半导体器件还包括在沟槽中的栅极电极和与沟槽的侧壁相邻的主体区域。 半导体器件还包括沟槽中的电介质结构。 电介质结构包括沟槽下部的高k电介质。 高k电介质包括比SiO2更高的介电常数。 在垂直于第一表面的垂直方向上的高k电介质的延伸在沟槽的底侧和体区的底侧与沟槽的侧壁相邻的水平之间被限制。
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公开(公告)号：US20120098097A1
公开(公告)日：2012-04-26
申请号：US12908562
申请日：2010-10-20
IPC分类号： H01L27/082 , H01L27/06
CPC分类号： H01L29/7395 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.
摘要翻译： 提供IGBT模块。 所述IGBT模块具有至少第一单独的IGBT，所述第一单独IGBT在关断所述IGBT模块期间具有第一柔性，以及至少第二独立IGBT并联连接至所述至少一个第一IGBT。 所述至少一个第二单独IGBT在关断IGBT模块期间具有与第一柔性不同的第二柔软度。 此外，提供了并联连接的具有两个单独的IGBT的电路和电子功率器件。
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7.发明授权Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type 有权二极管具有一个或多个第一导电类型的区域和一个或多个第二导电类型的区域，每个区域都位于第二导电类型的层内公开(公告)号：US07687891B2
公开(公告)日：2010-03-30
申请号：US11748050
申请日：2007-05-14
IPC分类号： H01L29/06 , H01L29/861
CPC分类号： H01L29/7395 , H01L27/0761 , H01L29/0623 , H01L29/0834 , H01L29/8613 , H01L29/87
摘要： A semiconductor device includes a first layer having a first conductivity type, a second layer having a second conductivity type, a third layer having the second conductivity type, one or more first zones having the first conductivity type and located within the second layer, wherein each one of the one or more first zones is adjacent to the third layer, and one or more second zones having the second conductivity type and located within the second layer, wherein each one of the one or more second zones is adjacent to one or more of the one or more first zones.
摘要翻译： 半导体器件包括具有第一导电类型的第一层，具有第二导电类型的第二层，具有第二导电类型的第三层，具有第一导电类型并位于第二层内的一个或多个第一区， 所述一个或多个第一区域中的一个与所述第三层相邻，以及具有所述第二导电类型并且位于所述第二层内的一个或多个第二区域，其中所述一个或多个第二区域中的每一个与所述第二区域中的一个或多个相邻 一个或多个第一区域。
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公开(公告)号：US20080283868A1
公开(公告)日：2008-11-20
申请号：US11748050
申请日：2007-05-14
IPC分类号： H01L29/739 , H01L21/329 , H01L29/861 , H01L21/331
CPC分类号： H01L29/7395 , H01L27/0761 , H01L29/0623 , H01L29/0834 , H01L29/8613 , H01L29/87
摘要： A semiconductor device includes a first layer having a first conductivity type, a second layer having a second conductivity type, a third layer having the second conductivity type, one or more first zones having the first conductivity type and located within the second layer, wherein each one of the one or more first zones is adjacent to the third layer, and one or more second zones having the second conductivity type and located within the second layer, wherein each one of the one or more second zones is adjacent to one or more of the one or more first zones.
摘要翻译： 半导体器件包括具有第一导电类型的第一层，具有第二导电类型的第二层，具有第二导电类型的第三层，具有第一导电类型并位于第二层内的一个或多个第一区， 所述一个或多个第一区域中的一个与所述第三层相邻，以及具有所述第二导电类型并且位于所述第二层内的一个或多个第二区域，其中所述一个或多个第二区域中的每一个与所述第二区域中的一个或多个相邻 一个或多个第一区域。
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9.发明申请Soft Switching Semiconductor Component with High Robustness and Low Switching Losses 有权具有高稳定性和低开关损耗的软开关半导体元件公开(公告)号：US20070278472A1
公开(公告)日：2007-12-06
申请号：US11757451
申请日：2007-06-04
IPC分类号： H01L29/06
CPC分类号： H01L29/861 , H01L21/263 , H01L29/063 , H01L29/7395 , H01L29/74
摘要： A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.
摘要翻译： 半导体部件包括半导体主体和用作后侧发射极的第一导电类型的第二半导体区。 第二半导体区域之前是与第一导电类型相反的多个第二导电类型的第三半导体区域。 第三半导体区域在横向彼此间隔开。 此外，设置在半导体本体内的是与第二半导体区间隔开的场阻挡区域，从而减小朝向第二半导体区域的方向的电场。
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公开(公告)号：US09412854B2
公开(公告)日：2016-08-09
申请号：US12908562
申请日：2010-10-20
IPC分类号： H01L27/082 , H01L29/739 , H01L25/07
CPC分类号： H01L29/7395 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.
摘要翻译： 提供IGBT模块。 所述IGBT模块具有至少第一单独的IGBT，所述第一单独IGBT在关断所述IGBT模块期间具有第一柔性，以及至少第二独立IGBT并联连接至所述至少一个第一IGBT。 所述至少一个第二单独IGBT在关断IGBT模块期间具有与第一柔性不同的第二柔软度。 此外，提供了并联连接的具有两个单独的IGBT的电路和电子功率器件。
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