公开(公告)号：US08643191B2

公开(公告)日：2014-02-04

申请号：US13358792

申请日：2012-01-26

申请人： Hanyi Ding ,  Pinping Sun ,  Guoan Wang ,  Wayne H. Woods, Jr.

发明人： Hanyi Ding ,  Pinping Sun ,  Guoan Wang ,  Wayne H. Woods, Jr.

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/481 ,  H01L23/66 ,  H01L2224/16225 ,  H01L2924/1305 ,  H01L2924/15311 ,  H01L2924/00

摘要： Disclosed is a chip with a power divider/combiner, a module incorporating the chip and associated methods. The divider/combiner comprises first and second metal layers on opposite sides of a substrate. Interconnects extend through the substrate and comprise: a first interconnect, second interconnects annularly arranged about the first interconnect and third interconnects annularly arranged about the second interconnects. Each interconnect comprises one or more through silicon vias lined/filled with a conductor. For a power divider, an opening in the first metal layer at the first interconnect comprises an input port for receiving power and openings in the first or second metal layer at the second interconnects comprise output ports for applying power to other devices. For a power combiner, openings in the first or second metal layer at the second interconnects comprise the input ports and an opening in the first metal layer at the first interconnect comprises an output port.

摘要翻译： 公开了具有功率分配器/组合器的芯片，包括芯片的模块和相关联的方法。 分隔器/组合器包括在衬底的相对侧上的第一和第二金属层。 互连件延伸穿过衬底并且包括：第一互连，围绕第一互连环形布置的第二互连和围绕第二互连环形布置的第三互连。 每个互连包括一个或多个内衬/填充有导体的通孔硅通孔。 对于功率分配器，第一互连处的第一金属层中的开口包括用于接收功率的输入端口，并且在第二互连处的第一或第二金属层中的开口包括用于向其它器件施加电力的输出端口。 对于功率组合器，在第二互连处的第一或第二金属层中的开口包括输入端口，并且在第一互连处的第一金属层中的开口包括输出端口。

公开(公告)号：US20130193584A1

公开(公告)日：2013-08-01

申请号：US13358792

申请日：2012-01-26

申请人： Hanyi Ding ,  Pinping Sun ,  Guoan Wang ,  Wayne H. Woods, JR.

发明人： Hanyi Ding ,  Pinping Sun ,  Guoan Wang ,  Wayne H. Woods, JR.

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L23/66 ,  H01L2224/16225 ,  H01L2924/1305 ,  H01L2924/15311 ,  H01L2924/00

摘要： Disclosed is a chip with a power divider/combiner, a module incorporating the chip and associated methods. The divider/combiner comprises first and second metal layers on opposite sides of a substrate. Interconnects extend through the substrate and comprise: a first interconnect, second interconnects annularly arranged about the first interconnect and third interconnects annularly arranged about the second interconnects. Each interconnect comprises one or more through silicon vias lined/filled with a conductor. For a power divider, an opening in the first metal layer at the first interconnect comprises an input port for receiving power and openings in the first or second metal layer at the second interconnects comprise output ports for applying power to other devices. For a power combiner, openings in the first or second metal layer at the second interconnects comprise the input ports and an opening in the first metal layer at the first interconnect comprises an output port.

摘要翻译： 公开了具有功率分配器/组合器的芯片，包括芯片的模块和相关联的方法。 分隔器/组合器包括在衬底的相对侧上的第一和第二金属层。 互连件延伸穿过衬底并且包括：第一互连，围绕第一互连环形布置的第二互连和围绕第二互连环形布置的第三互连。 每个互连包括一个或多个内衬/填充有导体的通孔硅通孔。 对于功率分配器，第一互连处的第一金属层中的开口包括用于接收功率的输入端口，并且在第二互连处的第一或第二金属层中的开口包括用于向其它器件施加电力的输出端口。 对于功率组合器，在第二互连处的第一或第二金属层中的开口包括输入端口，并且在第一互连处的第一金属层中的开口包括输出端口。

公开(公告)号：US08106728B2

公开(公告)日：2012-01-31

申请号：US12424110

申请日：2009-04-15

申请人： Hanyi Ding ,  Kwan H. Lam ,  Guoan Wang ,  Wayne H. Woods, Jr.

发明人： Hanyi Ding ,  Kwan H. Lam ,  Guoan Wang ,  Wayne H. Woods, Jr.

IPC分类号： H01P3/08 ,  H01P1/203

CPC分类号： H01P1/203 ,  Y10T29/49155

摘要： The present invention generally relates to a circuit structure, design structure and method of manufacturing a circuit, and more specifically to a circuit structure and design structure for an on-chip slow wave transmission line band-stop filter and a method of manufacture. A structure includes an on-chip transmission line stub comprising a conditionally floating structure structured to provide increased capacitance to the on-chip transmission line stub when the conditionally floating structure is connected to ground.

摘要翻译： 本发明一般涉及一种电路结构，电路制造的设计结构和方法，更具体地涉及用于片上慢波传输线带阻滤波器的电路结构和设计结构以及制造方法。 一种结构包括片上传输线短截线，其包括有条件浮动结构，其被构造为当有条件浮动结构连接到地时为片上传输线短截线提供增加的电容。

公开(公告)号：US08898605B2

公开(公告)日：2014-11-25

申请号：US12911327

申请日：2010-10-25

申请人： Hanyi Ding ,  Guoan Wang ,  Wayne H. Woods, Jr.

发明人： Hanyi Ding ,  Guoan Wang ,  Wayne H. Woods, Jr.

IPC分类号： G06F17/50 ,  H01P3/08 ,  H01P1/15

CPC分类号： H01P3/08 ,  H01P1/15 ,  Y10T29/49117

摘要： An on-chip tunable transmission line (t-line), methods of manufacture and design structures are provided. The structure includes a tunable transmission line (t-line) with fixed characteristic impedance comprising functionally-differentiated switches used for inductance and capacitance, respectively.

摘要翻译： 提供片上可调输电线（t线），制造方法和设计结构。 该结构包括具有固定特性阻抗的可调传输线（t线），分别包括用于电感和电容的功能差分开关。

公开(公告)号：US08120145B2

公开(公告)日：2012-02-21

申请号：US12140364

申请日：2008-06-17

申请人： Amit Bavisi ,  Hanyi Ding ,  Guoan Wang ,  Wayne H. Woods, Jr. ,  Jiansheng Xu

发明人： Amit Bavisi ,  Hanyi Ding ,  Guoan Wang ,  Wayne H. Woods, Jr. ,  Jiansheng Xu

IPC分类号： H01L27/06

CPC分类号： H01P1/20363

摘要： A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.

摘要翻译： 设计结构体现在用于设计，制造或测试设计的机器可读介质中。 该设计结构包括具有硅层的基板。 此外，设计结构包括在硅层的底侧上的金属层和在硅层的顶侧上的介电层。 此外，该设计结构包括在电介质层的表面上的通过硅通孔带通滤波器的顶侧互连以及与顶侧互连件接触的介电层中的多个触点。 此外，设计结构包括分别通过基板并与多个触点和金属层接触的多个穿硅通孔。

公开(公告)号：US08791771B2

公开(公告)日：2014-07-29

申请号：US13298489

申请日：2011-11-17

申请人： Hanyi Ding ,  Guoan Wang ,  Wayne H. Woods, Jr. ,  Jiansheng Xu

发明人： Hanyi Ding ,  Guoan Wang ,  Wayne H. Woods, Jr. ,  Jiansheng Xu

IPC分类号： H01P5/12 ,  H03L5/00

CPC分类号： H01P5/16

摘要： A reconfigurable Wilkinson power divider, methods of manufacture and design structures are provided. The structure includes a first port, and a first arm and a second arm connected to the first port. The first arm and the second arm each include one or more tunable t-line circuits. The structure also includes a second port and a third port connected to the first port via the first arm and second arm, respectively.

摘要翻译： 提供可重构的Wilkinson功率分配器，制造和设计结构的方法。 该结构包括第一端口和连接到第一端口的第一臂和第二臂。 第一臂和第二臂各包括一个或多个可调t线电路。 该结构还包括分别经由第一臂和第二臂连接到第一端口的第二端口和第三端口。

公开(公告)号：US20120019313A1

公开(公告)日：2012-01-26

申请号：US12839777

申请日：2010-07-20

申请人： Wayne H. Woods, JR. ,  Guoan Wang ,  Hanyi Ding

发明人： Wayne H. Woods, JR. ,  Guoan Wang ,  Hanyi Ding

IPC分类号： H01P1/20

CPC分类号： H01P1/127 ,  H01F17/0006 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/10 ,  H01L2223/6627 ,  H01L2924/0002 ,  H03K17/145 ,  H01L2924/00

摘要： A semiconductor switching device includes a field effect transistor and an inductor structure that provides a frequency dependent inductance in a parallel connection. During the off-state of the semiconductor switching device, the frequency dependent impedance component due to the off-state parasitic capacitance of the switching device is cancelled by the frequency dependent inductance component of the inductor structure, which provides a non-linear impedance as a function of frequency. The inductor structure provides less inductance at a higher operating frequency than at a lower operating frequency to provide more effective cancellation of two impedance components of the parasitic capacitance and the inductance. Thus, the semiconductor switching device can provide low parasitic coupling at multiple operating frequencies. The operating frequencies of the semiconductor switching device can be at gigahertz ranges for millimeter wave applications.

摘要翻译： 半导体开关器件包括场效应晶体管和在并联连接中提供频率相关电感的电感器结构。 在半导体开关器件的截止状态期间，由开关器件的截止状态寄生电容引起的与频率相关的阻抗分量被电感器结构的频率相关的电感分量抵消，该电感器结构提供非线性阻抗作为 频率功能 电感器结构在较高工作频率下提供比在较低工作频率下更小的电感，以提供更有效地消除寄生电容和电感的两个阻抗分量。 因此，半导体开关器件可以在多个工作频率下提供低的寄生耦合。 对于毫米波应用，半导体开关器件的工作频率可以是千兆赫兹范围。

公开(公告)号：US20110043299A1

公开(公告)日：2011-02-24

申请号：US12542958

申请日：2009-08-18

申请人： Hanyi Ding ,  Essam Mina ,  Guoan Wang ,  Wayne H. Woods, JR.

发明人： Hanyi Ding ,  Essam Mina ,  Guoan Wang ,  Wayne H. Woods, JR.

IPC分类号： H01P5/18 ,  H01P1/18

CPC分类号： H01P3/082 ,  H01L27/0617 ,  H01L27/0629 ,  H01P5/227

摘要： Branchline coupler structure using slow wave transmission line effect having both large inductance and large capacitance per unit length. The branchline coupler structure includes a plurality of quarter-wavelength transmission lines, at least one of which includes a high impedance arm and a low impedance arm. The high and low impedances are relative to each other. The high impedance arm includes a plurality of narrow cells and having an inductance of nL and a capacitance of C/n, and the low impedance arm includes a plurality of wide cells and having an inductance of L/n and capacitance of nC. The wide and narrow cells are relative to each other, and the wide and narrow cells are adjacent each other to form a signal layer having step discontinuous alternative widths.

摘要翻译： 使用慢波传输线效应的分支线耦合器结构具有每单位长度的大电感和大电容。 支线耦合器结构包括多个四分之一波长传输线，其中至少一个包括高阻抗臂和低阻抗臂。 高阻抗和低阻抗是相对的。 高阻抗臂包括多个窄电池并且具有nL的电感和C / n的电容，并且低阻抗臂包括多个宽电池并且具有L / n的电感和nC的电容。 宽和窄的单元彼此相对，并且宽和窄的单元彼此相邻以形成具有阶梯不连续替代宽度的信号层。

公开(公告)号：US20100265011A1

公开(公告)日：2010-10-21

申请号：US12424110

申请日：2009-04-15

申请人： Hanyi Ding ,  Kwan H. Lam ,  Guoan Wang ,  Wayne H. Woods, JR.

发明人： Hanyi Ding ,  Kwan H. Lam ,  Guoan Wang ,  Wayne H. Woods, JR.

IPC分类号： H01P3/08 ,  H05K3/10 ,  G06F17/50

CPC分类号： H01P1/203 ,  Y10T29/49155

摘要： The present invention generally relates to a circuit structure, design structure and method of manufacturing a circuit, and more specifically to a circuit structure and design structure for an on-chip slow wave transmission line band-stop filter and a method of manufacture. A structure includes an on-chip transmission line stub comprising a conditionally floating structure structured to provide increased capacitance to the on-chip transmission line stub when the conditionally floating structure is connected to ground.

摘要翻译： 本发明一般涉及一种电路结构，电路制造的设计结构和方法，更具体地涉及用于片上慢波传输线带阻滤波器的电路结构和设计结构以及制造方法。 一种结构包括片上传输线短截线，其包括有条件浮动结构，其被构造为当有条件浮动结构连接到地时为片上传输线短截线提供增加的电容。

公开(公告)号：US08405453B2

公开(公告)日：2013-03-26

申请号：US12839777

申请日：2010-07-20

申请人： Wayne H. Woods, Jr. ,  Guoan Wang ,  Hanyi Ding

发明人： Wayne H. Woods, Jr. ,  Guoan Wang ,  Hanyi Ding

IPC分类号： H03K5/00 ,  H01L27/24

CPC分类号： H01P1/127 ,  H01F17/0006 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L27/0629 ,  H01L28/10 ,  H01L2223/6627 ,  H01L2924/0002 ,  H03K17/145 ,  H01L2924/00

摘要： A semiconductor switching device includes a field effect transistor and an inductor structure that provides a frequency dependent inductance in a parallel connection. During the off-state of the semiconductor switching device, the frequency dependent impedance component due to the off-state parasitic capacitance of the switching device is cancelled by the frequency dependent inductance component of the inductor structure, which provides a non-linear impedance as a function of frequency. The inductor structure provides less inductance at a higher operating frequency than at a lower operating frequency to provide more effective cancellation of two impedance components of the parasitic capacitance and the inductance. Thus, the semiconductor switching device can provide low parasitic coupling at multiple operating frequencies. The operating frequencies of the semiconductor switching device can be at gigahertz ranges for millimeter wave applications.

摘要翻译： 半导体开关器件包括场效应晶体管和在并联连接中提供频率相关电感的电感器结构。 在半导体开关器件的截止状态期间，由开关器件的截止状态寄生电容引起的与频率相关的阻抗分量被电感器结构的频率相关的电感分量抵消，该电感器结构提供非线性阻抗作为 频率功能 电感器结构在较高工作频率下提供比在较低工作频率下更小的电感，以提供更有效地消除寄生电容和电感的两个阻抗分量。 因此，半导体开关器件可以在多个工作频率下提供低的寄生耦合。 对于毫米波应用，半导体开关器件的工作频率可以是千兆赫兹范围。