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    Monolithic microwave integrated circuit on high resistivity silicon
    3.
    发明授权
    Monolithic microwave integrated circuit on high resistivity silicon 失效
    高电阻硅上的单片微波集成电路

    公开(公告)号：US5449953A

    公开(公告)日：1995-09-12

    申请号：US358041

    申请日：1994-12-15

    申请人： Harvey C. Nathanson ,  Michael W. Cresswell ,  Thomas J. Smith, Jr. ,  Lewis R. Lowry, Jr. ,  Maurice H. Hanes

    发明人： Harvey C. Nathanson ,  Michael W. Cresswell ,  Thomas J. Smith, Jr. ,  Lewis R. Lowry, Jr. ,  Maurice H. Hanes

    IPC分类号： H01L21/762 ,  H01L21/764 ,  H01L21/84 ,  H01L21/86 ,  H01L23/36 ,  H01L23/29 ,  H01L23/48 ,  H01P3/08

    CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/84 ,  H01L21/86 ,  H01L21/76289 ,  H01L2924/0002

    摘要： A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance. The resulting architecture is an alternative to gallium arsenide integrated circuits for microwave applications.

    摘要翻译： 描述了基于硅的单片微波集成电路架构。 这种称为MICROX TM的架构是硅材料生长和晶圆处理技术的组合。 使用高电阻率硅材料的衬底制造晶片。 优选使用SIMOX工艺，在活性硅表面下方的晶片内形成绝缘层。 在晶片上制造单片电路。 在晶片背面形成接地平面电极。 微带互连和晶体管源极和漏极之间的直流和rf电容损耗由此最小化。 通过在晶片的底表面上保持屏蔽层，可以减少作为CMOS处理的结果的衬底材料的电阻率。 微带和气桥连接器，自对准处理和氮化物侧壁间距可用于进一步提高设备性能。 所得结构是用于微波应用的砷化镓集成电路的替代品。

    Miniaturized atomic frequency standard
    4.
    发明授权
    Miniaturized atomic frequency standard 失效
    小型化原子频率标准

    公开(公告)号：US5192921A

    公开(公告)日：1993-03-09

    申请号：US815677

    申请日：1991-12-31

    申请人： Peter J. Chantry ,  Robert W. Weinert ,  Salvador H. Tallisa ,  Bruce R. McAvoy ,  Thomas J. Smith, Jr.

    发明人： Peter J. Chantry ,  Robert W. Weinert ,  Salvador H. Tallisa ,  Bruce R. McAvoy ,  Thomas J. Smith, Jr.

    IPC分类号： H03L7/26

    CPC分类号： G04F5/14 ,  H03L7/26

    摘要： A cell-type atomic frequency standard utilizing a miniaturized gas cell and microwave exciter along with a diode laser light source. The intensity of the diode laser light source counterbalances the penalties associated with the small gas cell. The signal produced by an oscillator is applied to a vapor within the gas cell by a miniature helix coil, or LC gap conductor, or a microstrip exciter. With the dimensions of the gas cell not exceeding one-half the wavelength of the signal, and the associated circuitry formed on a semiconductor substrate, the resulting frequency standard is reduced in size by two orders of magnitude when compared to prior art devices of comparable accuracy.

    摘要翻译： 利用小型气体电池和微波激励器以及二极管激光光源的电池型原子频率标准。 二极管激光光源的强度抵消了与小气体池相关的惩罚。 由振荡器产生的信号通过微型螺旋线圈或LC间隙导体或微带激励器施加到气体单元内的蒸汽。 由于气体电池的尺寸不超过信号波长的一半以及形成在半导体衬底上的相关电路，与现有技术的可比精度的器件相比，所得到的频率标准尺寸减小两个数量级 。

    Diode having reduced on-resistance and associated method of manufacture
    5.
    发明授权
    Diode having reduced on-resistance and associated method of manufacture 有权
    二极管具有降低的导通电阻和相关的制造方法

    公开(公告)号：US08138583B2

    公开(公告)日：2012-03-20

    申请号：US11675658

    申请日：2007-02-16

    申请人： Saptharishi Sriram ,  Thomas J. Smith, Jr. ,  Helmut Hagleitner

    发明人： Saptharishi Sriram ,  Thomas J. Smith, Jr. ,  Helmut Hagleitner

    IPC分类号： H01L29/15

    CPC分类号： H01L29/1608 ,  H01L23/291 ,  H01L23/31 ,  H01L29/0657 ,  H01L29/6606 ,  H01L29/6609 ,  H01L29/861 ,  H01L29/868 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa, and the sides of the mesa are covered with a nonconductive spacer extending from the anode to the bottom layer. An ohmic contact, preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide.

    摘要翻译： 在正向偏置状态下具有降低的导通电阻的二极管结构包括优选为碳化硅的半导体层。 器件的阳极和阴极位于底部半导体层的同一侧，提供横跨二极管体的横向导通。 阳极定位在半导体台面上，并且台面的侧面被从阳极延伸到底层的非导电间隔物覆盖。 欧姆接触，优选金属硅化物，覆盖在间隔物材料和阴极之间的底层的表面。 导电路径从阳极延伸穿过台面的主体并穿过底部半导体层，包括欧姆接触。 形成二极管的方法包括在二极管的适当区域上反应硅和金属层以形成金属硅化物的欧姆接触。

    Direct X-band waveform generator
    6.
    发明授权
    Direct X-band waveform generator 失效
    直接X波段波形发生器

    公开(公告)号：US5760736A

    公开(公告)日：1998-06-02

    申请号：US799820

    申请日：1997-02-13

    申请人： John Xavier Przybysz ,  Thomas J. Smith, Jr.

    发明人： John Xavier Przybysz ,  Thomas J. Smith, Jr.

    IPC分类号： G01S7/02 ,  G01S7/282 ,  G01S7/28

    CPC分类号： G01S7/282

    摘要： X-band signals are generated from the output of a Josephson junction array which is excited by a first RF frequency waveform digitally implemented in a data stream generated by a digital waveform generator gated by a stabilized local oscillator operating at a second frequency (X-band). The Josephson junction array outputs a digital data stream having pulses of quantum mechanically accurate uniform amplitude and picosecond pulsewidth. These pulses are fed to a bandpass filter which operates to extract a low phase-noise RF signal at X-band and consisting of the sum of the first and second frequencies and which can thereafter be used to generate transmit signals in a radar system and more particularly a cryogenic radar system.

    摘要翻译： 从由约瑟夫逊结阵列的输出产生X波段信号，该约瑟夫逊结阵列的输出被数字地实现在由数字波形发生器产生的数据流中的第一RF频率波形激励，数字波形发生器由在第二频率（X波段） ）。 约瑟夫逊结阵列输出具有量子机械精确均匀幅度和皮秒脉冲宽度脉冲的数字数据流。 这些脉冲被馈送到带通滤波器，其操作以提取X频带的低相位噪声RF信号，并且由第一和第二频率的和组成，并且其后可以用于在雷达系统中产生发射信号，并且更多 特别是低温雷达系统。

    High power gallium nitride field effect transistor switches
    7.
    发明授权
    High power gallium nitride field effect transistor switches 有权
    大功率氮化镓场效应晶体管开关

    公开(公告)号：US08421122B2

    公开(公告)日：2013-04-16

    申请号：US13110573

    申请日：2011-05-18

    申请人： Thomas J. Smith, Jr. ,  Matthew Wills ,  Saptharishi Sriram

    发明人： Thomas J. Smith, Jr. ,  Matthew Wills ,  Saptharishi Sriram

    IPC分类号： H01L29/66 ,  H01L31/0256

    CPC分类号： H03K17/693 ,  H01L23/645 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/088 ,  H01L2223/6683 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A monolithic high power radio frequency switch includes a substrate, and first and second gallium nitride high electron mobility transistors on the substrate. Each of the first and second gallium nitride high electron mobility transistors includes a respective source, drain and gate terminal. The source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground. An RF input pad is coupled to the drain terminal of the first second gallium nitride high electron mobility transistor, an RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor, and a control pad is coupled to the gate of the first gallium nitride high electron mobility transistor.

    摘要翻译： 单片高功率射频开关包括衬底，以及衬底上的第一和第二氮化镓高电子迁移率晶体管。 第一和第二氮化镓高电子迁移率晶体管中的每一个包括相应的源极，漏极和栅极端子。 第一氮化镓高电子迁移率晶体管的源极端子耦合到第二氮化镓高电子迁移率晶体管的漏极端子，并且第二氮化镓高电子迁移率晶体管的源极端子接地。 RF输入焊盘耦合到第一第二氮化镓高电子迁移率晶体管的漏极端子，RF输出焊盘耦合到第一氮化镓高电子迁移率晶体管的源极端子和第二氮化镓高电子迁移率晶体管的漏极端子 电子迁移率晶体管和控制焊盘耦合到第一氮化镓高电子迁移率晶体管的栅极。