Process for purifying hydrogen chloride gas
    1.
    发明授权
    Process for purifying hydrogen chloride gas 失效
    氯化氢气体净化工艺

    公开(公告)号:US4678482A

    公开(公告)日:1987-07-07

    申请号:US885013

    申请日:1986-07-14

    CPC分类号: C01B7/0706 C07C51/363

    摘要: Hydrogen chloride gas obtained as a by-product in the production of chloroacetic acid by subjecting acetic acid to a catalytic chlorination reaction with chlorine gas in the presence of acetic anhydride and/or acetyl chloride is purified. The prepurified by-product still contains 0.1-3 vol % acetyl chloride and up to 0.1 vol % chloroacetyl chloride. For purification, the hydrogen chloride gas is passed through two zones series-connected together and scrubbed in countercurrent fashion. More particularly, it is scrubbed in the first zone with concentrated hydrochloric acid and in the second zone with concentrated sulfuric acid.

    摘要翻译: 纯化在乙酸酐和/或乙酰氯存在下,通过使乙酸与氯气进行催化氯化反应在氯乙酸生产中作为副产物获得的氯化氢气体。 预纯化的副产物仍含有0.1-3体积%的乙酰氯和至多0.1体积%的氯乙酰氯。 为了净化,氯化氢气体通过串联连接在一起的两个区域,并以逆流方式洗涤。 更具体地说,它在第一区域用浓盐酸洗涤,在第二区用浓硫酸洗涤。

    Process for the production of alloys in an inductively heated
cold-walled crucible
    2.
    发明授权
    Process for the production of alloys in an inductively heated cold-walled crucible 失效
    在感应加热的冷壁坩埚中生产合金的方法

    公开(公告)号:US5690891A

    公开(公告)日:1997-11-25

    申请号:US594009

    申请日:1996-01-30

    IPC分类号: C22C1/00 C21C5/52 C22C1/02

    摘要: In a process for the production of alloys from at least two alloy components (A, B, C, D, . . . ) with different melting points by melting in an inductively heated cold-walled crucible (1) with a cooled crucible base (3), in order to obtain an exact and homogeneous alloy composition at least a part of the alloy components (A, B, C, D, . . . ) are introduced into the cold-walled crucible (1) consecutively and in stacked fashion where either a) the alloy component (a) in each case with the lower melting point is introduced first or b) the alloy component in each case with the lower density is introduced first and following the introduction at least one of further alloy component the heating energy is switched on. The process serves preferably for the production of the intermetallic phase TiAl, where firstly the aluminium and then the titanium are stacked in the cold-walled crucible (1).

    摘要翻译: 在通过在感应加热的冷壁坩埚(1)中用冷却的坩埚基底(1)熔化而从具有不同熔点的至少两种合金组分(A,B,C,D ...)生产合金的方法中, 3),为了获得精确且均匀的合金组成,将至少一部分合金成分(A,B,C,D ...)连续并且以堆叠方式引入冷壁坩埚(1) 其中a)首先引入具有较低熔点的每种情况下的合金组分(a)或b)首先引入具有较低密度的每种情况下的合金组分,并且在引入至少一种其它合金组分的加热 能量打开。 该方法优选用于生产金属间相TiAl,其中首先将铝然后钛堆叠在冷壁坩埚(1)中。

    Process for making 1,2-dichloroethane
    3.
    发明授权
    Process for making 1,2-dichloroethane 失效
    制备1,2-二氯乙烷的方法

    公开(公告)号:US4774373A

    公开(公告)日:1988-09-27

    申请号:US554586

    申请日:1983-11-23

    CPC分类号: C07C17/02

    摘要: The disclosure relates to a process for making 1,2-dichloroethane by reacting ethylene with chlorine in a solvent in the presence of a catalyst, at a temperature of about 20.degree. to 200.degree. C. at atmospheric or elevated pressure, and distillatively separating the 1,2-dichloroethane from the chlorination mixture. The disclosure provides more particularly for the catalyst used to be an anhydrous tetrachloroferrate(1-) or a substance capable of forming a tetrachloroferrate(1-) in the reaction mixture.

    摘要翻译: 本公开涉及通过在约20℃至200℃的温度下在大气压或高压下在催化剂存在下,使乙烯与氯反应制备1,2-二氯乙烷的方法,并蒸馏分离 从氯化混合物中加入1,2-二氯乙烷。 本公开更具体地提供了用于在反应混合物中作为无水四氯铁酸盐(1-)或能够形成四氯铁酸盐(1-)的物质的催化剂。

    Method and Device for Closed-Loop Control of the Electrode Gap in a Vacuum Arc Furnace
    4.
    发明申请
    Method and Device for Closed-Loop Control of the Electrode Gap in a Vacuum Arc Furnace 有权
    真空电弧炉电极间隙闭环控制方法与装置

    公开(公告)号:US20130279535A1

    公开(公告)日:2013-10-24

    申请号:US13880545

    申请日:2011-10-06

    IPC分类号: H05B7/152

    摘要: The invention relates to a method as well as a device for closed-loop control of the electrode gap in a vacuum arc furnace (10), wherein an electrode gap of a melting electrode from the surface of a melt material is subjected to closed-loop control as a function of a droplet short-circuit rate. For this purpose, a histogram (70) of detected droplet short-circuits (80) is created on the basis of at least one droplet short-circuit criterion (76), the histogram (70) is subdivided into sub-areas (72), a characteristic sub-area (74) of the histogram (70) is selected for closed-loop control purposes, and an electrode gap is subjected to closed-loop control on the basis of the droplet short-circuits (80) which can be associated with the selected sub-area (74).

    摘要翻译: 本发明涉及一种方法以及用于在真空电弧炉(10)中对电极间隙进行闭环控制的装置,其中熔融电极与熔体材料表面的电极间隙经受闭环 控制作为液滴短路速率的函数。 为此,基于至少一个液滴短路标准(76)创建检测到的液滴短路(80)的直方图(70),直方图(70)被细分为子区域(72) 选择直方图(70)的特征子区域(74)用于闭环控制目的,并且基于液滴短路(80)对电极间隙进行闭环控制,其可以是 与所选择的子区域(74)相关联。

    Electroslag remelting plant with a mould and a hood
    5.
    发明授权
    Electroslag remelting plant with a mould and a hood 失效
    电铸重熔厂用模具和罩

    公开(公告)号:US06540012B1

    公开(公告)日:2003-04-01

    申请号:US09566485

    申请日:2000-05-08

    IPC分类号: B22D2310

    CPC分类号: C22B9/00 B22D23/10 C21C7/00

    摘要: In an electroslag remelting point with a mold (4) for forming an ingot from the remelted material of at least one consumable electrode (33), with a body (6) having at least one vertically driven electrode rod (15) for advancing a respective consumable electrode (33), and with a hood (19) which is disposed above the mold (4) and has at least one opening (18) which is concentric with the respective electrode axis (A), a pot-shaped boiler (20) is provided which accommodates the mould (4) and can be joined to the hood (19) to form a chamber (34) which is closed all round, completely encompasses the mould (4, 28) and can be connected via pipelines (22, 23) to a vacuum pump and/or a gas source, so that the chamber (34) can be evacuated or filled with an inert gas.

    摘要翻译: 在具有用于从至少一个可消耗电极(33)的重熔材料形成锭的模具(4)的电渣重熔点中,具有至少一个垂直驱动的电极棒(15)的主体(6),用于使相应的 消耗电极(33),以及设置在模具(4)上方的罩(19),并且具有与相应电极轴线(A)同心的至少一个开口(18),盆形锅炉 ),其容纳模具(4)并且可以连接到罩(19)以形成整个封闭的室(34),完全包围模具(4,28),并且可以通过管道(22)连接 ,23)连接到真空泵和/或气体源,使得腔室(34)可以被抽空或填充惰性气体。

    Process for making 1,2-dichloroethane
    6.
    发明授权
    Process for making 1,2-dichloroethane 失效
    制备1,2-二氯乙烷的方法

    公开(公告)号:US4672142A

    公开(公告)日:1987-06-09

    申请号:US419084

    申请日:1982-09-16

    摘要: The disclosure relates to a process for making 1,2-dichloroethane by reacting ethylene and chlorine in a reaction zone having a liquid medium containing chlorinated C.sub.2 -hydrocarbons circulated therein. To this end, the disclosure provides:(a) for approximately equimolar proportions of ethylene and chlorine to be introduced into the circulated liquid medium; for the whole to be reacted in a reaction zone at a temperature of about 75.degree. up to 200.degree. C. under a pressure of about 1 up to 15 bars, the mean sojourn time of the reaction mixture in the mixing zone and reaction zone being equal to about 1 to 15 hours;(b) for a portion of liquid reaction mixture to be removed from the reaction zone and subdivided into two streams, for one of these streams to be passed through a heat exchanger for the abstraction of calorific energy and reduction of its initial temperature, and for it to be recycled to the mixing and reaction zone; for the second stream to be introduced into an expansion vessel and for proportions corresponding to the quantity of reaction product formed in the reaction zone to be evaporated therein; for resulting vaporous matter to be introduced into a fractionating column, unevaporated liquid matter of the second stream being recycled into the liquid medium circulated in the mixing and reaction zone; and(c) for 1,2-dichloroethane to be distillatively separated from the vaporous matter introduced into the fractionating column with the use of a portion of the heat energy transferred inside the heat exchanger and for the 1,2-dichloroethane to be removed overhead.

    摘要翻译: 本公开涉及在具有在其中循环的含有氯代C 2-烃的液体介质的反应区中使乙烯和氯反应制备1,2-二氯乙烷的方法。 为此,本公开内容提供:(a)将大约等摩尔比例的乙烯和氯引入循环液体介质中; 在整个反应区中,在约1至15巴的压力下,在约75℃至200℃的温度下在反应区中反应,反应混合物在混合区和反应区中的平均停留时间为 等于约1至15小时; (b)一部分液体反应混合物从反应区域中除去并再细分为两股,其中一条流通过一个热交换器,用于抽出热能并降低其初始温度; 它被再循环到混合和反应区; 将第二物流引入膨胀容器中,并且其比例对应于在其中蒸发的反应区中形成的反应产物的量; 为了使所得到的蒸汽物质被引入分馏塔中,第二物流的未蒸发的液体物质被循环到在混合和反应区中循环的液体介质中; 和(c)将1,2-二氯乙烷与引入分馏塔的蒸汽物质蒸馏分离,使用热交换器内部传递的一部分热能,并将1,2-二氯乙烷从塔顶馏去 。

    Process for the production of tin(IV) chloride
    7.
    发明授权
    Process for the production of tin(IV) chloride 失效
    生产氯化锡(IV)的方法

    公开(公告)号:US4396593A

    公开(公告)日:1983-08-02

    申请号:US346299

    申请日:1982-02-05

    IPC分类号: C01G19/02 C01G19/08

    CPC分类号: C01G19/08

    摘要: Chlorine is reacted with excess tin in liquid tin(IV) chloride at 20.degree. to 90.degree. C., 30 to 300 dm.sup.3 (S.T.P.)h.sup.-1 of chlorine being passed in per dm.sup.3 of tin(IV) chloride present in the reaction chamber and 0.08 to 0.3 dm.sup.3 h.sup.-1 of tin(IV) chloride being recycled with cooling per 1 dm.sup.3 (S.T.P.)h.sup.-1 of chlorine passed in. An excess of tin of at least 4 times the weight of chlorine passed in per hour is maintained. An amount of tin(IV) chloride is taken out of the cycle such that the level of the tin(IV) chloride in the reaction chamber remains approximately constant. The tin(IV) chloride taken off is brought into contact at 60.degree. to 110.degree. C. for an average residence time of 1 to 7 hours with tin in liquid tin(IV) chloride, thereafter filtered and, if appropriate, treated with absorbing agents. Pure, ready-for-use tin(IV) chloride is obtained continuously without a purification by distillation in a simple, readily cleanable apparatus made of a cheap material.

    摘要翻译: 氯与二氯化锡中的过量锡在20〜90℃反应,30〜300dm 3(STP)h-1的氯在每分钟3次的氯化锡(IV) 和0.08〜0.3dm3h-1的氯化锡(IV),每1 dm3(STP)h-1的氯气冷却循环,保持每小时通过的氯的至少4倍的过量锡 。 从循环中取出一定量的氯化锡(IV),使得反应室中氯化锡(IV)的水平保持近似恒定。 取出的氯化锡(IV)在60℃至110℃下接触,平均停留时间为1至7小时,与锡在液体氯化锡(IV)中,然后过滤,如果合适,用吸收 代理商 通过在廉价材料制成的简单容易清洁的装置中通过蒸馏纯化,可以连续获得纯的即用型氯化锡(IV)。

    Purification of 1,2-dichloroethane recovered in the incomplete thermal
cracking to vinyl chloride
    8.
    发明授权
    Purification of 1,2-dichloroethane recovered in the incomplete thermal cracking to vinyl chloride 失效
    将不完全热裂解中回收的1,2-二氯乙烷纯化成氯乙烯

    公开(公告)号:US4257850A

    公开(公告)日:1981-03-24

    申请号:US115205

    申请日:1980-01-25

    CPC分类号: C07C17/38 Y02P20/51

    摘要: The invention relates to a process for purifying 1,2-dichloroethane which is recovered during incomplete thermal cracking to vinyl chloride and contains contaminants boiling at a temperature lower than 83.7.degree. C. under a pressure of 1011 millibars, briefly termed low boilers, and contaminants boiling at a temperature higher than 83.7.degree. C. under a pressure of 1011 millibars, briefly termed high boilers. More particularly, low boilers are distilled off overhead from contaminated 1,2-dichloroethane, in a first distilling zone; a portion of low boiler concentrate is continuously treated at 30.degree. to 85.degree. C. with gaseous chlorine and converted to high boilers; pure 1,2-dichloroethane is distilled off overhead from high boilers, in a second distilling zone; and residual dichloroethane is distilled off under reduced pressure from high boiler concentrate, in a third distilling zone, and the high boilers are removed; high boiler-containing effluent coming from the chlorination of low boiler concentrate is introduced into the lower portion of the third distilling zone (FIG. 2 of accompanying drawing).

    摘要翻译: 本发明涉及一种纯化1,2-二氯乙烷的方法,该方法是在不完全热裂解过程中回收到氯乙烯中,并在1011毫巴的压力下含有在低于83.7℃的温度下沸腾的污染物,简称为低锅炉和污染物 在温度高于83.7℃的温度下在1011毫巴的压力下沸腾,简称为高锅炉。 更具体地说,在第一蒸馏区中,将低沸点物从被污染的1,2-二氯乙烷顶部蒸馏掉; 一部分低浓缩锅炉用气态氯在30〜85℃下连续处理,转化成高锅炉; 在第二蒸馏区中从高锅炉塔顶馏出纯的1,2-二氯乙烷; 并在第三蒸馏区中从高浓度的锅炉中减压蒸除残留的二氯乙烷,并且除去高锅炉; 来自低浓度锅炉浓缩物氯化的高含锅炉的废水被引入第三蒸馏区的下部(附图2)。

    Method and apparatus for the production of precision castings by centrifugal casting
    9.
    发明授权
    Method and apparatus for the production of precision castings by centrifugal casting 有权
    用于通过离心铸造生产精密铸件的方法和装置

    公开(公告)号:US06443212B1

    公开(公告)日:2002-09-03

    申请号:US09409629

    申请日:1999-10-01

    IPC分类号: B22D1304

    摘要: Molds (1) with annular mold parts (2, 3) divided by at least one plane of division (E—E) and forming a plurality of cavities (8) disposed at least substantially radially to a centrifugation axis (A—A), serve for the production of precision castings by centrifugal casting, especially of parts made of materials containing titanium for internal combustion engines, the molds (1) and a casting system being contained in a closed chamber. To automate production, at least one mold part (2, 3) is made to rotate in its own rotational guide, and two mold parts (2, 3) together with the corresponding rotational guides are brought to a closed position for the casting and solidification and to an open position for the removal of the precision castings. When cast, the precision castings are preferably joined together at their radially inward pointing ends by a circumferential ring of the solidified metal and thus a circle of castings can be removed from the opened mold by a manipulating system.

    摘要翻译: 具有环形模具部件(2,3)的模具(1)除以至少一个分割平面(EE)并形成至少基本径向设置于离心轴线(AA)的多个空腔(8),用于生产 的精密铸件通过离心铸造,特别是由用于内燃机的钛材料制成的部件,模具(1)和铸造系统被包含在封闭的腔室中。 为了自动化生产,使至少一个模具部件(2,3)在其自身的旋转引导件中旋转,并且两个模具部件(2,3)与相应的旋转导向件一起被带到关闭位置以进行铸造和固化 并且到达用于移除精密铸件的打开位置。 当铸造时,精密铸件优选地通过固化金属的周向环在其径向向内指向的端部处连接在一起,因此可以通过操纵系统从开模中移除一圈铸件。

    Method and apparatus for the oriented solidification of molten silicon
to form an ingot in a bottomless crystallization chamber
    10.
    发明授权
    Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber 失效
    用于在无底结晶室中熔融硅定向固化以形成锭的方法和装置

    公开(公告)号:US6027563A

    公开(公告)日:2000-02-22

    申请号:US799133

    申请日:1997-02-13

    摘要: For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid on the surface of the cooling body. The top surface of the seed body (25) is melted, and the ingot is grown on top of it as the cooling body is lowered by relative motion with respect to the crystallization chamber (9, 41) at a rate which is dependent on the supply of additional silicon and the solidification rate. For the purpose of producing large ingots with a coarsely crystalline to monocrystalline structure, a seed body (25) with a crystalline structure selected from the group ranging from coarsely crystalline to monocrystalline is used. Either lump silicon is placed on top of the seed body (25) and melted by induction, or molten silicon is produced in a forehearth (37) and poured onto the seed body (25). The seed body (25) has a thickness of 0.3-20 mm, and preferably of 1-10 mm.

    摘要翻译: 对于熔融硅的取向固化,在具有可相对于室降低的冷却体(11)的无底结晶室(9,41)中形成锭,将种子体(25)的平坦底面 固体硅被放置在冷却体的表面上。 晶种(25)的顶表面被熔化,并且随着冷却体相对于结晶室(9,41)的相对运动而降低冷却体的晶锭在其顶部生长,速率取决于 供应额外的硅和凝固率。 为了生产具有粗晶体到单晶结构的大锭,使用具有从粗结晶到单晶范围的晶体结构的种子体(25)。 将块状硅放置在种子体(25)的顶部并通过感应熔化,或者在前炉(37)中产生熔融硅并倒入种子体(25)。 种子体(25)的厚度为0.3〜20mm,优选为1〜10mm。