公开(公告)号：US07186661B2

公开(公告)日：2007-03-06

申请号：US10607612

申请日：2003-06-27

申请人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas A. Kamp ,  Alan J. Miller ,  Saurabh Ullal ,  Harmeet Singh

发明人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas A. Kamp ,  Alan J. Miller ,  Saurabh Ullal ,  Harmeet Singh

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/7833

摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

摘要翻译： 提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。 该方法开始于限定保护待蚀刻的多晶硅膜的图案。 然后，产生等离子体。 接下来，蚀刻大部分未被保护的多晶硅膜。 然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。 还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

公开(公告)号：US07682980B2

公开(公告)日：2010-03-23

申请号：US11627016

申请日：2007-01-25

申请人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas A. Kamp ,  Alan J. Miller ,  Saurabh Ullal ,  Harmeet Singh

发明人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas A. Kamp ,  Alan J. Miller ,  Saurabh Ullal ,  Harmeet Singh

IPC分类号： H01L21/302

CPC分类号： H01L21/32137

摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

摘要翻译： 提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。 该方法开始于限定保护待蚀刻的多晶硅膜的图案。 然后，产生等离子体。 接下来，蚀刻大部分未被保护的多晶硅膜。 然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。 还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

公开(公告)号：US20070117399A1

公开(公告)日：2007-05-24

申请号：US11627016

申请日：2007-01-25

申请人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas Kamp ,  Alan Miller ,  Saurabh Ullal ,  Harmeet Singh

发明人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas Kamp ,  Alan Miller ,  Saurabh Ullal ,  Harmeet Singh

IPC分类号： H01L21/8242 ,  H01L21/302

CPC分类号： H01L21/32137

摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

摘要翻译： 提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。 该方法开始于限定保护待蚀刻的多晶硅膜的图案。 然后，产生等离子体。 接下来，蚀刻大部分未被保护的多晶硅膜。 然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。 还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

公开(公告)号：US20070119545A1

公开(公告)日：2007-05-31

申请号：US11627025

申请日：2007-01-25

申请人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas Kamp ,  Alan Miller ,  Saurabh Ullal ,  Harmeet Singh

发明人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas Kamp ,  Alan Miller ,  Saurabh Ullal ,  Harmeet Singh

IPC分类号： H01L21/306

CPC分类号： H01L21/32137

摘要： A semiconductor processing system is provided. The semiconductor processing system includes a chamber. The chamber includes a gas inlet, a top electrode configured to strike a plasma inside the chamber, and a support for holding a substrate. A controller configured to detect a passivation starved condition during an etching operation is provided. The controller is further configured to introduce a passivation enhancing gas through the gas inlet during the etching operation in response to detecting the passivation starved condition.

摘要翻译： 提供半导体处理系统。 半导体处理系统包括腔室。 腔室包括气体入口，构造成撞击室内的等离子体的顶部电极和用于保持衬底的支撑件。 提供了一种被配置为在蚀刻操作期间检测钝化不足状态的控制器。 控制器还被配置为响应于检测到钝化不足状况而在蚀刻操作期间通过气体入口引入钝化增强气体。