公开(公告)号：US09082805B2

公开(公告)日：2015-07-14

申请号：US13372423

申请日：2012-02-13

申请人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

发明人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

IPC分类号： H01L21/67 ,  H01L21/683

CPC分类号： H01L21/6833

摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

摘要翻译： 本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

公开(公告)号：US20080087641A1

公开(公告)日：2008-04-17

申请号：US11639263

申请日：2006-12-15

申请人： Anthony De La Llera ,  Saurabh Ullal

发明人： Anthony De La Llera ,  Saurabh Ullal

IPC分类号： H05H1/24 ,  C23F1/00 ,  H01L21/306 ,  H01L21/302 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3255

摘要： Components for a plasma processing apparatus are provided, including fastener members adapted to accommodate the stresses generated during thermal cycling. The fasteners include deflectable spacers to accommodate forces generated by the difference in thermal expansion while minimizing generation of additional particulate contamination.

摘要翻译： 提供了一种用于等离子体处理装置的部件，包括适于容纳热循环期间产生的应力的紧固件部件。 紧固件包括可偏转间隔件，以适应由热膨胀差产生的力，同时最小化附加颗粒污染物的产生。

公开(公告)号：US07186661B2

公开(公告)日：2007-03-06

申请号：US10607612

申请日：2003-06-27

申请人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas A. Kamp ,  Alan J. Miller ,  Saurabh Ullal ,  Harmeet Singh

发明人： Helene Del Puppo ,  Frank Lin ,  Chris Lee ,  Vahid Vahedi ,  Thomas A. Kamp ,  Alan J. Miller ,  Saurabh Ullal ,  Harmeet Singh

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/7833

摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

摘要翻译： 提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。 该方法开始于限定保护待蚀刻的多晶硅膜的图案。 然后，产生等离子体。 接下来，蚀刻大部分未被保护的多晶硅膜。 然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。 还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

公开(公告)号：US08313665B2

公开(公告)日：2012-11-20

申请号：US12954017

申请日：2010-11-24

申请人： Thomas R. Stevenson ,  Anthony de la Llera ,  Saurabh Ullal

发明人： Thomas R. Stevenson ,  Anthony de la Llera ,  Saurabh Ullal

IPC分类号： G01L21/30 ,  H01L21/302

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32724

摘要： Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

摘要翻译： 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，在穿过背板的多个接触点处附接到背板或喷头电极; 以及在接触点处分离背板和热控制板，或背板和喷头电极的至少一个导热和导电的衬垫。 还公开了使用喷头电极组件处理半导体衬底的方法。

公开(公告)号：US20120153971A1

公开(公告)日：2012-06-21

申请号：US13372423

申请日：2012-02-13

申请人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

发明人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

IPC分类号： G01R27/26 ,  G01R23/02

CPC分类号： H01L21/6833

摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

摘要翻译： 本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

公开(公告)号：US20110024049A1

公开(公告)日：2011-02-03

申请号：US12512520

申请日：2009-07-30

申请人： Tom Stevenson ,  Daniel Byun ,  Saurabh Ullal ,  Babak Kadkhodayan ,  Rajinder Dhindsa

发明人： Tom Stevenson ,  Daniel Byun ,  Saurabh Ullal ,  Babak Kadkhodayan ,  Rajinder Dhindsa

IPC分类号： C23F1/00

CPC分类号： H01L21/68757 ,  H01J37/32541 ,  H01J37/3255 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

摘要： An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

摘要翻译： 提供一种静电卡盘组件，其包括陶瓷接触层，图案化结合层，导电基板和地下电弧缓解层。 陶瓷接触层和导电基板协作以形成在静电卡盘组件的地下部分中形成的多个混合气体分配通道。 混合气体分配通道中的单个气体分布通道包括由导电基板呈现的相对高导电性的表面和由陶瓷接触层呈现的相对低的电导率。 地下电弧缓解层包括相对较低电导率的层，并且形成在静电卡盘组件的地下部分中的混合气体分配通道的较高电导率表面上。 还提供了半导体晶片处理室。

公开(公告)号：US08797705B2

公开(公告)日：2014-08-05

申请号：US12557387

申请日：2009-09-10

申请人： John C. Valcore, Jr. ,  Saurabh Ullal ,  Daniel Byun ,  Ed Santos ,  Konstantin Makhratchev

发明人： John C. Valcore, Jr. ,  Saurabh Ullal ,  Daniel Byun ,  Ed Santos ,  Konstantin Makhratchev

IPC分类号： H01L21/683 ,  H01T23/00 ,  H02H1/00

CPC分类号： H01L21/6831 ,  H01L21/67069

摘要： A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

摘要翻译： 一种用于优化解扣序列的方法，其包括从下电极去除衬底。 该方法包括执行初始分析以确定在解扣序列期间形成的等离子体的第一组电特性数据是否穿过阈值。 如果是这样，关闭惰性气体。 该方法还包括从下电极稍微升高升降器销，以向上移动基板。 该方法还包括执行机械和电气分析，其包括将包括提升器引脚施加的力的第一组机械数据与阈值进行比较。 机械和电气分析还包括将第二组电特性数据与阈值进行比较。 如果两者都穿过相应的阈值，则由于发生了衬底释放事件而从底部电极去除衬底。

公开(公告)号：US08410393B2

公开(公告)日：2013-04-02

申请号：US12785774

申请日：2010-05-24

申请人： Anthony Ricci ,  Saurabh Ullal ,  Michael Kang ,  Matthew Busche

发明人： Anthony Ricci ,  Saurabh Ullal ,  Michael Kang ,  Matthew Busche

IPC分类号： B23K37/00

CPC分类号： H01L21/67248 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109

摘要： A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10° C. above T2; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.

摘要翻译： 一种衬底支撑件的再循环系统，半导体衬底在其上在真空室中进行多步骤处理，所述系统包括衬底支撑件，所述衬底支撑件在其底板中具有至少一个液体流动通道，流体连通的入口和出口 与流路连通，与入口流体连通的供应管线和与出口流体连通的回流管线; 第一再循环器，其在与供应管线和回流管线流体连通的温度T1下提供液体; 第二再循环器在温度T2下提供与供应管线和返回管线流体连通的液体，温度T2在温度T1以上至少10℃; 预冷单元，其在连接到入口和出口的温度Tpc处提供液体，温度Tpc在T1以下至少10℃; 预热单元，其在连接到入口和出口的温度Tph下提供液体，温度Tph在T2以上至少10℃; 控制器，其可操作以选择性地操作所述再循环系统的阀，以在所述流动通道和所述第一再循环器，所述第二再循环器，所述预冷单元或所述预热单元之间再循环液体。

公开(公告)号：US08143904B2

公开(公告)日：2012-03-27

申请号：US12249215

申请日：2008-10-10

申请人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

发明人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

IPC分类号： G01R27/26

CPC分类号： H01L21/6833

摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

摘要翻译： 本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

公开(公告)号：US20120024449A1

公开(公告)日：2012-02-02

申请号：US12844527

申请日：2010-07-27

申请人： Anthony Ricci ,  Saurabh Ullal ,  Larry Martinez

发明人： Anthony Ricci ,  Saurabh Ullal ,  Larry Martinez

IPC分类号： B32B37/02 ,  H01L21/306 ,  C23F1/00 ,  C23C14/34 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32798 ,  H01L21/6833 ,  Y10T156/10

摘要： Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

摘要翻译： 可以通过用套筒覆盖空隙内部的导电表面来消除等离子体处理室的部件中空隙中的寄生等离子体。 空隙可以是诸如上电极和基板支撑件的室部件中的气孔，提升销孔，氦通道，导管和/或增压室。