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    Production of photolithographic structures
    3.
    发明授权
    Production of photolithographic structures 失效
    光刻结构的生产

    公开(公告)号：US5384220A

    公开(公告)日：1995-01-24

    申请号：US811706

    申请日：1991-12-20

    申请人： Recai Sezi ,  Horst Borndoerfer ,  Rainer Leuschner ,  Michael Sebald ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Recai Sezi ,  Horst Borndoerfer ,  Rainer Leuschner ,  Michael Sebald ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： G03F7/004 ,  G03F7/027 ,  G03F7/029 ,  G03F7/039 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/027

    CPC分类号： G03F7/265 ,  Y10S430/147 ,  Y10S430/167

    摘要： A method for the photolithographic production of structures in the submicron range including the following steps:- a photoresist layer comprising a polymer containing carboxylic acid anhydride and carboxylic acid tert. butyl ester groups, a photoinitiator which releases an acid when exposed, and a suitable solvent is applied to a substrate;- the photoresist layer is dried;- the photoresist layer is exposed in an imagewise manner;- the exposed photoresist layer is subjected to temperature treatment;- the photoresist layer treated in this way is subjected to liquid silylation;- the silylated photoresist layer is dry-developed in an anisotropic oxygen plasma;where the temperature treatment is handled in such a way that the photoresist becomes hydrophilic in the exposed areas.

    摘要翻译： 一种用于在亚微米范围内光刻生产结构的方法，包括以下步骤： - 包含含有羧酸酐和羧酸叔丁酯的聚合物的光致抗蚀剂层。 丁基酯基，暴露时释放酸的光引发剂和合适的溶剂施加到基材上; - 将光致抗蚀剂层干燥; - 以成像方式曝光光致抗蚀剂层; 曝光的光致抗蚀剂层进行温度处理; - 以这种方式处理的光致抗蚀剂层进行液体甲硅烷基化; - 甲硅烷基化的光致抗蚀剂层在各向异性的氧等离子体中干式显影; 其中以这样的方式处理温度处理，使得光致抗蚀剂在曝光区域中变得亲水。

    Etch-resistant deep ultraviolet resist process having an aromatic treating step after development
    4.
    发明授权
    Etch-resistant deep ultraviolet resist process having an aromatic treating step after development 失效
    耐蚀深层超紫外线抗蚀剂工艺在发展后具有芳香处理步骤

    公开(公告)号：US5173393A

    公开(公告)日：1992-12-22

    申请号：US513570

    申请日：1990-04-24

    申请人： Recai Sezi ,  Michael Sebald ,  Rainer Leuschner ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Recai Sezi ,  Michael Sebald ,  Rainer Leuschner ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： G03F7/038 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/40

    摘要： A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.

    摘要翻译： 提供易于结构化并且特别适用于深紫外范围的光致抗蚀剂体系。 通过用反应物处理在光刻产生的光致抗蚀剂结构中产生对含卤素等离子体的耐腐蚀性提高。 反应物主要包含芳族结构，并且包括适于与光致抗蚀剂的其它可反应基团进行化学反应的反应性基团。 在一个实施方案中，光致抗蚀剂包括适于用深紫外光结构化的酸酐或环氧基团。

    Method for manufacturing heat-stable structured layers from photopolymers which are addition reaction products of olefinic unsaturated monoisocyanates and phenol-formaldehyde resins
    5.
    发明授权
    Method for manufacturing heat-stable structured layers from photopolymers which are addition reaction products of olefinic unsaturated monoisocyanates and phenol-formaldehyde resins 失效
    由光聚合物制造热稳定结构层的方法，其为烯属不饱和单异氰酸酯和苯酚 - 甲醛树脂的加成反应产物

    公开(公告)号：US4975347A

    公开(公告)日：1990-12-04

    申请号：US481783

    申请日：1990-02-16

    申请人： Hellmut Ahne ,  Winfried Plundrich

    发明人： Hellmut Ahne ,  Winfried Plundrich

    IPC分类号： B32B27/42 ,  C08J3/28 ,  G03F7/032 ,  G03F7/038 ,  G03F7/38

    CPC分类号： G03F7/032 ,  Y10S430/143 ,  Y10S430/146

    摘要： Heat-stable structured layers can be manufactured through the application of radiation-sensitive soluble polymers in the form of a layer or film on a substrate, irradiation of the layer respectively film through negative patterns with actinic light or through the use of a light, electron, laser, or ion beam, removal of the non-irradiated layer respectively film parts and, if necessary, through subsequent tempering, in a cost-effective way in dimension-precise and high-quality form and in a single application process, when the polymers used are photopolymers in the form of addition reaction products of olefinic unsaturated monoisocyates with phenolformaldehyde resins. The layers produced with this method resist even high thermal and mechanical stress in immersion soldering processes and protect circuit surfaces effectively and permanently against moisture and corrosion; they are therefore suitable for use, in particular as solder resist and insulating layers in microelectronics.

    摘要翻译： 热稳定结构层可以通过在衬底上施加层或膜形式的辐射敏感的可溶性聚合物来制造，该层通过具有光化的光分别通过负型图案照射或通过使用光，电子 ，激光或离子束，分别去除非辐射层的膜部件，并且如果需要，通过随后的回火以成本有效的方式去除尺寸精确和高质量的形式以及在单个应用过程中，当 使用的聚合物是烯属不饱和单异氰酸酯与酚醛树脂的加成反应产物形式的光聚合物。 用这种方法生产的层在浸没焊接过程中抵抗甚至高的热和机械应力，并有效和永久地保护电路表面免受潮湿和腐蚀; 因此它们适合于使用，特别是作为微电子学中的阻焊剂和绝缘层。

    Method for the production of heat-resistant structured layers
    6.
    发明授权
    Method for the production of heat-resistant structured layers 失效
    生产耐热结构层的方法

    公开(公告)号：US4828948A

    公开(公告)日：1989-05-09

    申请号：US877872

    申请日：1986-06-24

    申请人： Hellmut Ahne ,  Winfried Plundrich

    发明人： Hellmut Ahne ,  Winfried Plundrich

    IPC分类号： G03F7/26 ,  A61K38/00 ,  C08G18/48 ,  C08G18/81 ,  G03F7/038 ,  H01B3/36 ,  H01B3/42

    CPC分类号： H01B3/42 ,  C08G18/4879 ,  C08G18/8116 ,  C08G18/8175 ,  G03F7/0388 ,  H01B3/36 ,  A61K38/00 ,  Y10S430/146

    摘要： A cost-efficient method for producing dimensionally precise and high-grade heat-resistent structured layers by applying a single coating of a radiation-sensitive soluble polyether-based photopolymer in the form of a layer or foil on a substrate; irradiating the layer or foil through a negative with actinic light or by guiding a light, electron, laser, or ion beam; removing the nonirradiated layer or foil portions; and subsequent optional annealing, wherein the photopolymer comprises an addition product of an olefin-unsaturated monoisocyanate and a polether having at least one hydroxyl group. The layers provided according to the invention can withstand the thermal and mechanical stresses of dip soldering process, and protect circuit surfaces effectively and durably against moisture and corrosion; they are therefore suitable in particular as solder resist and insulating layers in microconductor technology.

    摘要翻译： 一种经济有效的方法，用于通过在基底上施加层或箔形式的辐射敏感的可溶性聚醚基光聚合物的单一涂层来生产尺寸精确和高等级的耐热结构层; 用光化或通过引导光，电子，激光或离子束照射层或箔通过负片; 去除非照射层或箔部分; 和随后的任选退火，其中光聚合物包含烯烃不饱和单异氰酸酯和具有至少一个羟基的极性的加成产物。 根据本发明提供的层可以承受浸焊工艺的热和机械应力，并且有效地和耐久地保护电路表面防止湿气和腐蚀; 因此，它们特别适用于微导体技术中的阻焊层和绝缘层。

    Method for the manufacture of polyimidazole and polyimidazo-pyrrolone precursors from tetra carboxylic acid moiety reactant
    7.
    发明授权
    Method for the manufacture of polyimidazole and polyimidazo-pyrrolone precursors from tetra carboxylic acid moiety reactant 失效
    从四羧酸部分反应物制备聚咪唑和聚咪唑啉酮前体的方法

    公开(公告)号：US4801681A

    公开(公告)日：1989-01-31

    申请号：US21152

    申请日：1987-03-03

    申请人： Hellmut Ahne

    发明人： Hellmut Ahne

    IPC分类号： C08G73/00 ,  C08G73/10 ,  C08G73/18 ,  C08G73/20 ,  G03F7/038

    CPC分类号： C08G73/20 ,  C08G73/18 ,  G03F7/0387 ,  Y10T428/31504 ,  Y10T428/31721

    摘要： Oligomeric and/or polymeric radiation-reactive polyimidazole and polyimidazo pyrrolone precursors which are soluble in organic solvents, can be prepared with high purity, i.e., especially without chloride, in a simple manner if an aromatic and/or heterocyclic tetraamino compound is reacted in the presence of a carbodiimide, with an olefinically unsaturated monocarboxylic acid and a dicarboxylic acid, or with an olefinically unsaturated monocarboxylic acid and an aromatic and/or heterocyclic tetracarboxylic acid dianhydride, or with an olefinically unsaturated tetracarboxylic acid diester, in the form of an addition product of the tetracarboxylic acid dianhydride and an olefinically unsaturated alcohol. The radiation-reactive precursors prepared in this manner are suitable, for instance, for the manufacture of highly heat-resistant relief structures.

    摘要翻译： 可溶于有机溶剂的低聚物和/或聚合物辐射反应性聚咪唑和聚咪唑啉酮前体可以以简单的方式以高纯度，即特别是没有氯化物制备，如果芳族和/或杂环四氨基化合物在 碳烯二亚胺与烯属不饱和一元羧酸和二羧酸的存在，或与烯属不饱和一元羧酸和芳族和/或杂环四羧酸二酐或与烯属不饱和四羧酸二酯形成的加成产物 的四羧酸二酐和烯属不饱和醇。 以这种方式制备的辐射反应性前体是适合的，例如用于制造高耐热浮雕结构。

    N-Azidosulfonylaryl-maleinimides
    8.
    发明授权
    N-Azidosulfonylaryl-maleinimides 失效
    N-叠氮磺酰基芳基 - 马来酰亚胺

    公开(公告)号：US4329556A

    公开(公告)日：1982-05-11

    申请号：US148142

    申请日：1980-05-09

    申请人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

    发明人： Roland Rubner ,  Eberhard Kuhn ,  Hellmut Ahne

    IPC分类号： C08K5/00 ,  C07D207/44 ,  C07D207/452 ,  C07D207/456 ,  C08K5/41 ,  C08K5/43

    CPC分类号： C07D207/452 ,  C08K5/43

    摘要： The invention relates to new arylsulfonylazides as well as the use of these compounds. The new compounds are characterized by the general formula: ##STR1## where R=aryl; x=1 or 2; and R.sup.1 and R.sup.2 are selected from H, CH.sub.3 and Cl and may be the same or different, with the provision that CH.sub.3 and Cl are not present side by side. The compounds according to the invention are suitable as photoinitiators in the preparation of relief structures by phototechniques from olefinically unsaturated polymers, as well as cross-link enhancing agents in the radical-wise cross linking of thermoplastic polymers.

    摘要翻译： 本发明涉及新的芳基磺酰基叠氮化物以及这些化合物的用途。 新化合物的特征在于通式：其中R =芳基; x = 1或2; 并且R 1和R 2选自H，CH 3和Cl并且可以相同或不同，条件是CH 3和Cl不并列存在。 根据本发明的化合物在通过光学技术从烯属不饱和聚合物制备浮雕结构中以及在热塑性聚合物的自由基交联中的交联增强剂中适合作为光引发剂。