摘要:
An integrated circuit with electrostatic discharge protection includes a first transistor with a source terminal, a drain terminal and a gate terminal, and a second transistor with a source terminal, a drain terminal and a gate terminal. The gate terminal for each of the first and second transistors is connected to the drain terminal. The first transistor is connected in series with the second transistor by one of the drain and source terminals of the first transistor being connected to one of the drain and source terminals of the second transistor. The series circuit formed by the transistors is connected to an input terminal of the integrated circuit or to a supply terminal and a terminal that applies the reference potential of the integrated circuit. The series circuit of the transistors is dimensioned by the number of transistors and the setting of the channel length and channel width ratios of the transistors.
摘要:
An ESD protection apparatus for limiting a voltage superimposed on an electric useful voltage to an allowable voltage, comprising a plurality of series-connected diodes. The diodes are forward-biased with reference to the useful voltage. Each individual forward-biased diode has a threshold voltage. The sum of the threshold voltages of the series-connected diodes corresponds to the allowable voltage.
摘要:
A dynamic semiconductor memory has memory cells disposed in a cell field. The memory cells are connected to master word lines by way of a word line driver for driving the memory cells. As a rule, all the master word lines that are located in the segmented cell field are inactive, with at most one master word line being active. The master word lines are switched to an active low state, and a portion of the master word lines in a region of the cell field are inverted by a control device located at the beginning of the cell field. The deactivated master word lines in the cell field are at a ground potential, which, in view of the large number of existing master word lines, advantageously substantially reduces the leakage current that must be applied by the generators.
摘要:
An integrated circuit has a voltage divider that is configured to save current. The circuit includes a capacitor that is inventively connected to a potential sink or potential source by way of a charge branch even when the voltage divider is inactive. The capacitor is thus held at a charge state that corresponds to the charge state given an active voltage divider. The voltage divider thus becomes functional in a shorter time following activation, because the capacitor does not require recharging.
摘要:
Embodiments relate to a semiconductor device, including a channel area; a gate line extending along the channel area so that the channel area can be set into a conductive state by activating the gate line; a plurality of terminals including an electrical connection to the channel area, so that the plurality of terminals is connectable to a predetermined voltage by activating the gate line.
摘要:
A clamp for securing a tubular or hose-shaped object on a support. The clamp includes a clamp jacket having first and second ends, wherein a first leg protrudes from the first end of the clamp jacket and a second leg projects from the second end of the clamp jacket. The first leg has a lug which in the open state protrudes in the direction of the second leg. The second leg includes a fastening section which can be inserted into a gap between the lug and a neighboring portion of the first leg located opposite the lug, wherein, in the closed state of the clamp, the lug is plastically deformed toward the outer side of the fastening section facing away from the first leg.
摘要:
One or more embodiments are related to a method of operating a phase-change memory array, including: providing the phase-change memory array, the phase-change memory array including a phase-change memory element in series with an access device between a first address line and a power line; causing a first current through the memory element from the first address line to the power line; and causing a second current through the memory element from the power line to the first address line.
摘要:
Embodiments relate to a semiconductor device, including a channel area; a gate line extending along the channel area so that the channel area can be set into a conductive state by activating the gate line; a plurality of terminals including an electrical connection to the channel area, so that the plurality of terminals is connectable to a predetermined voltage by activating the gate line.
摘要:
The invention relates to an unsaturated polyester resin mixture which can be cured by applying external pressure and which encompasses at least the following components: a) an unsaturated polyester resin whose weight-average molar mass is from 500 to 5000 g/mol; b) an ethylenically unsaturated monomer; c) a shrinkage-reducing component; d) an inert filler; and e) a reinforcing fibre; and f) from 0.01 to 1% by weight of a block copolymer, based on the total weight of the unsaturated polyester resin mixture comprising reinforcing fibre, where the block copolymer encompasses at least one A block and encompasses at least one B block, where the A block contains at least one amine-containing, ethylenically unsaturated monomer; and the B block contains at least one alkyl- and/or phenyl-containing, ethylenically unsaturated monomer, and is free from amine-containing, ethylenically unsaturated monomers. The present invention further relates to a process for preparation of the polyester resin mixtures and to the use of the block copolymers f) in unsaturated polyester resin mixtures.
摘要:
A non-volatile memory device includes a plurality of word lines, a plurality of sense lines, and a plurality of non-volatile memory cells. Each memory cell includes a floating gate transistor having a control gate, a floating gate separated dielectrically from the control gate, a drain connection and a source connection. The control gate is connected to one of the word lines and the source connection is connected to one of the sense lines, the drain connection being electrically isolated from the other memory cells. A method for reading the memory device and a method for operating the memory device are also provided.