Integrated circuit with electrostatic discharge protection
    1.
    发明申请
    Integrated circuit with electrostatic discharge protection 有权
    具有静电放电保护的集成电路

    公开(公告)号:US20060232897A1

    公开(公告)日:2006-10-19

    申请号:US11389540

    申请日:2006-03-27

    IPC分类号: H02H9/00

    CPC分类号: H01L27/0266

    摘要: An integrated circuit with electrostatic discharge protection includes a first transistor with a source terminal, a drain terminal and a gate terminal, and a second transistor with a source terminal, a drain terminal and a gate terminal. The gate terminal for each of the first and second transistors is connected to the drain terminal. The first transistor is connected in series with the second transistor by one of the drain and source terminals of the first transistor being connected to one of the drain and source terminals of the second transistor. The series circuit formed by the transistors is connected to an input terminal of the integrated circuit or to a supply terminal and a terminal that applies the reference potential of the integrated circuit. The series circuit of the transistors is dimensioned by the number of transistors and the setting of the channel length and channel width ratios of the transistors.

    摘要翻译: 具有静电放电保护的集成电路包括具有源极端子,漏极端子和栅极端子的第一晶体管以及具有源极端子,漏极端子和栅极端子的第二晶体管。 第一和第二晶体管中的每一个的栅极端子连接到漏极端子。 第一晶体管与第二晶体管串联连接,第一晶体管的漏极和源极之一连接到第二晶体管的漏极和源极端之一。 由晶体管形成的串联电路连接到集成电路的输入端子,或连接到施加集成电路的基准电位的电源端子和端子。 晶体管的串联电路由晶体管的数量和晶体管的沟道长度和沟道宽度比的设置来确定。

    ESD protection apparatus
    2.
    发明申请
    ESD protection apparatus 审中-公开
    ESD保护装置

    公开(公告)号:US20050099745A1

    公开(公告)日:2005-05-12

    申请号:US10928754

    申请日:2004-08-27

    CPC分类号: H01L27/0255

    摘要: An ESD protection apparatus for limiting a voltage superimposed on an electric useful voltage to an allowable voltage, comprising a plurality of series-connected diodes. The diodes are forward-biased with reference to the useful voltage. Each individual forward-biased diode has a threshold voltage. The sum of the threshold voltages of the series-connected diodes corresponds to the allowable voltage.

    摘要翻译: 一种用于将叠加在电用电压上的电压限制为允许电压的ESD保护装置,包括多个串联二极管。 参考有用电压,二极管正向偏置。 每个单独的正向偏置二极管具有阈值电压。 串联二极管的阈值电压的总和对应于容许电压。

    Method for driving memory cells of a dynamic semiconductor memory and circuit configuration
    3.
    发明授权
    Method for driving memory cells of a dynamic semiconductor memory and circuit configuration 失效
    用于驱动动态半导体存储器和电路配置的存储单元的方法

    公开(公告)号:US06751135B2

    公开(公告)日:2004-06-15

    申请号:US10310930

    申请日:2002-12-05

    IPC分类号: G11C800

    CPC分类号: G11C11/4085

    摘要: A dynamic semiconductor memory has memory cells disposed in a cell field. The memory cells are connected to master word lines by way of a word line driver for driving the memory cells. As a rule, all the master word lines that are located in the segmented cell field are inactive, with at most one master word line being active. The master word lines are switched to an active low state, and a portion of the master word lines in a region of the cell field are inverted by a control device located at the beginning of the cell field. The deactivated master word lines in the cell field are at a ground potential, which, in view of the large number of existing master word lines, advantageously substantially reduces the leakage current that must be applied by the generators.

    摘要翻译: 动态半导体存储器具有设置在单元区域中的存储单元。 存储单元通过用于驱动存储器单元的字线驱动器连接到主字线。 通常,位于分段单元格字段中的所有主字线都是不活动的,最多只有一个主字线处于活动状态。 主字线切换到活动低电平状态,单元区域的一部分主字线由位于电池区开始处的控制装置反相。 单元区域中的去激活的主字线处于接地电位,鉴于大量现有主字线,有利地大大减少了发生器必须施加的漏电流。

    Integrated circuit with voltage divider and buffered capacitor
    4.
    发明授权
    Integrated circuit with voltage divider and buffered capacitor 有权
    集成电路与分压器和缓冲电容器

    公开(公告)号:US06930540B2

    公开(公告)日:2005-08-16

    申请号:US10460714

    申请日:2003-06-12

    IPC分类号: G11C5/14 G11C11/4074 G05F3/02

    摘要: An integrated circuit has a voltage divider that is configured to save current. The circuit includes a capacitor that is inventively connected to a potential sink or potential source by way of a charge branch even when the voltage divider is inactive. The capacitor is thus held at a charge state that corresponds to the charge state given an active voltage divider. The voltage divider thus becomes functional in a shorter time following activation, because the capacitor does not require recharging.

    摘要翻译: 集成电路具有配置为节省电流的分压器。 电路包括电容器,即使当分压器不活动时,电容器通过电荷分支发明地连接到电位吸收器或电位源。 因此,电容器保持在对应于给定有源分压器的充电状态的充电状态。 因此,由于电容器不需要充电,因此分压器在激活后的较短时间内变得功能化。

    Clamp for securing a tubular or hose-shaped object
    6.
    发明授权
    Clamp for securing a tubular or hose-shaped object 有权
    用于固定管状或软管形物体的夹具

    公开(公告)号:US09133963B2

    公开(公告)日:2015-09-15

    申请号:US13101294

    申请日:2011-05-05

    IPC分类号: F16L3/08 F16L3/12 F16L3/123

    CPC分类号: F16L3/12 F16L3/1233

    摘要: A clamp for securing a tubular or hose-shaped object on a support. The clamp includes a clamp jacket having first and second ends, wherein a first leg protrudes from the first end of the clamp jacket and a second leg projects from the second end of the clamp jacket. The first leg has a lug which in the open state protrudes in the direction of the second leg. The second leg includes a fastening section which can be inserted into a gap between the lug and a neighboring portion of the first leg located opposite the lug, wherein, in the closed state of the clamp, the lug is plastically deformed toward the outer side of the fastening section facing away from the first leg.

    摘要翻译: 用于将管状或软管形物体固定在支撑件上的夹具。 夹具包括具有第一和第二端的夹套,其中第一腿从夹套的第一端伸出,并且第二腿从夹套的第二端伸出。 第一腿具有在第二腿的方向上处于打开状态的凸耳。 第二腿部包括紧固部分,该紧固部分可以插入到凸耳与位于凸耳相对的第一腿部的相邻部分之间的间隙中,其中,在夹紧件的关闭状态下,凸耳朝向外部侧面塑性变形 紧固部分背离第一腿部。

    Semiconductor Device and Method for Making Same
    8.
    发明申请
    Semiconductor Device and Method for Making Same 有权
    半导体器件及其制造方法

    公开(公告)号:US20090316463A1

    公开(公告)日:2009-12-24

    申请号:US12143577

    申请日:2008-06-20

    申请人: Michael Sommer

    发明人: Michael Sommer

    IPC分类号: G11C17/00 H01S4/00 H01L29/76

    摘要: Embodiments relate to a semiconductor device, including a channel area; a gate line extending along the channel area so that the channel area can be set into a conductive state by activating the gate line; a plurality of terminals including an electrical connection to the channel area, so that the plurality of terminals is connectable to a predetermined voltage by activating the gate line.

    摘要翻译: 实施例涉及包括通道区域的半导体器件; 沿着沟道区延伸的栅极线,使得可以通过激活栅极线将沟道区域设置为导通状态; 多个终端,其包括与所述通道区域的电连接,使得通过激活所述栅极线,所述多个端子可连接到预定电压。

    Stabilized unsaturated polyester resin mixtures
    9.
    发明授权
    Stabilized unsaturated polyester resin mixtures 失效
    稳定的不饱和聚酯树脂混合物

    公开(公告)号:US07582701B2

    公开(公告)日:2009-09-01

    申请号:US11368070

    申请日:2006-03-03

    IPC分类号: C08L53/00 C08L67/00

    摘要: The invention relates to an unsaturated polyester resin mixture which can be cured by applying external pressure and which encompasses at least the following components: a) an unsaturated polyester resin whose weight-average molar mass is from 500 to 5000 g/mol; b) an ethylenically unsaturated monomer; c) a shrinkage-reducing component; d) an inert filler; and e) a reinforcing fibre; and f) from 0.01 to 1% by weight of a block copolymer, based on the total weight of the unsaturated polyester resin mixture comprising reinforcing fibre, where the block copolymer encompasses at least one A block and encompasses at least one B block, where the A block contains at least one amine-containing, ethylenically unsaturated monomer; and the B block contains at least one alkyl- and/or phenyl-containing, ethylenically unsaturated monomer, and is free from amine-containing, ethylenically unsaturated monomers. The present invention further relates to a process for preparation of the polyester resin mixtures and to the use of the block copolymers f) in unsaturated polyester resin mixtures.

    摘要翻译: 本发明涉及一种不饱和聚酯树脂混合物,其可以通过施加外部压力固化,并且至少包含以下组分:a)重均摩尔质量为500至5000g / mol的不饱和聚酯树脂; b)烯属不饱和单体; c)减缩组分; d)惰性填料; 和e)增强纤维; 和f)0.01至1重量%的嵌段共聚物,基于包含增强纤维的不饱和聚酯树脂混合物的总重量,其中嵌段共聚物包含至少一个A嵌段并且包含至少一个B嵌段,其中 嵌段含有至少一种含胺的烯属不饱和单体; 并且B嵌段含有至少一种含烷基和/或苯基的烯属不饱和单体,并且不含胺的烯属不饱和单体。 本发明还涉及一种制备聚酯树脂混合物的方法,以及在不饱和聚酯树脂混合物中使用嵌段共聚物f)。

    Non-volatile memory device with single transistor memory cell
    10.
    发明授权
    Non-volatile memory device with single transistor memory cell 有权
    具有单晶体管存储单元的非易失性存储器件

    公开(公告)号:US07376018B2

    公开(公告)日:2008-05-20

    申请号:US11416085

    申请日:2006-05-01

    申请人: Michael Sommer

    发明人: Michael Sommer

    IPC分类号: G11C11/34

    CPC分类号: G11C16/0416

    摘要: A non-volatile memory device includes a plurality of word lines, a plurality of sense lines, and a plurality of non-volatile memory cells. Each memory cell includes a floating gate transistor having a control gate, a floating gate separated dielectrically from the control gate, a drain connection and a source connection. The control gate is connected to one of the word lines and the source connection is connected to one of the sense lines, the drain connection being electrically isolated from the other memory cells. A method for reading the memory device and a method for operating the memory device are also provided.

    摘要翻译: 非易失性存储器件包括多个字线,多个感测线和多个非易失性存储器单元。 每个存储单元包括具有控制栅极的浮动栅极晶体管,从控制栅极电介质分离的浮动栅极,漏极连接和源极连接。 控制栅极连接到字线之一,源极连接到感测线之一,漏极连接与其它存储单元电隔离。 还提供了一种用于读取存储器件的方法和用于操作存储器件的方法。