公开(公告)号：US07229931B2

公开(公告)日：2007-06-12

申请号：US10870232

申请日：2004-06-16

申请人： Hemant P. Mungekar ,  Young S Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

发明人： Hemant P. Mungekar ,  Young S Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31612

摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

摘要翻译： 提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。 将流体气体以至少500sccm的流量引入基板处理室。 形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入 差距。 此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。 此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

公开(公告)号：US20050282398A1

公开(公告)日：2005-12-22

申请号：US10870232

申请日：2004-06-16

申请人： Hemant Mungekar ,  Young Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

发明人： Hemant Mungekar ,  Young Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

IPC分类号： C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  H01L21/00 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31612

摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

摘要翻译： 提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。 将流体气体以至少500sccm的流量引入基板处理室。 形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入 差距。 此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。 此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。