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    Task management in a workforce environment using an acoustic map constructed from aggregated audio
    2.
    发明授权
    Task management in a workforce environment using an acoustic map constructed from aggregated audio 有权
    使用由聚合音频构建的声学地图的劳动力环境中的任务管理

    公开(公告)号：US08706540B2

    公开(公告)日：2014-04-22

    申请号：US12962782

    申请日：2010-12-08

    申请人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

    发明人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

    IPC分类号： G06Q10/00

    CPC分类号： G06Q10/00 ,  G06Q10/06311 ,  G06Q30/00 ,  G06Q30/0241

    摘要： Incoming audio from mobile devices can be centrally processed, where a server can filter background noise in real time, such as by using an XOR function. Instead of discarding the filtered noise, however, it can be processed in parallel to dynamically construct an acoustic map of the environment. The acoustic map can be generated from an aggregation of sound data from multiple devices positioned in a geographic environment. The acoustic map can be linked to a configurable set of rules, conditions, and events, which can cause dynamic adjustments to be made to a workforce task management system. For example, employee availability can be assessed using the acoustic map and workforce tasks can be assigned based in part upon this availability.

    摘要翻译： 可以集中处理来自移动设备的传入音频，其中服务器可以实时过滤背景噪声，例如使用XOR功能。 然而，代替放弃滤波后的噪声，可以并行处理，以动态构建环境声学图。 声学图可以从位于地理环境中的多个设备的声音数据的聚集生成。 声学图可以链接到可配置的一组规则，条件和事件，这可以导致对劳动力任务管理系统进行动态调整。 例如，可以使用声学图来评估员工的可用性，并且可以部分地基于这种可用性分配劳动力任务。

    Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
    3.
    发明授权
    Selective suppression of dry-etch rate of materials containing both silicon and nitrogen 失效
    选择性抑制含有硅和氮的材料的干蚀刻速率

    公开(公告)号：US08679983B2

    公开(公告)日：2014-03-25

    申请号：US13449441

    申请日：2012-04-18

    申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

    摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    摘要翻译： 描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

    Selective suppression of dry-etch rate of materials containing both silicon and oxygen
    4.
    发明授权
    Selective suppression of dry-etch rate of materials containing both silicon and oxygen 有权
    选择性抑制含有硅和氧的材料的干蚀刻速率

    公开(公告)号：US08679982B2

    公开(公告)日：2014-03-25

    申请号：US13449543

    申请日：2012-04-18

    申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137

    摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    摘要翻译： 描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该技术提高其选择性的材料的实例包括氮化硅和硅。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

    Integrated process modulation for PSG gapfill
    5.
    发明授权
    Integrated process modulation for PSG gapfill 失效
    用于PSG填隙的集成过程调制

    公开(公告)号：US08497211B2

    公开(公告)日：2013-07-30

    申请号：US13490426

    申请日：2012-06-06

    申请人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

    发明人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

    IPC分类号： H01L21/311

    CPC分类号： C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224

    摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.

    摘要翻译： 在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。 此后，PSG膜的第一部分的一部分可被回蚀刻。 回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。 该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度 的PSG电影。

    Polysilicon films by HDP-CVD
    6.
    发明授权
    Polysilicon films by HDP-CVD 失效
    通过HDP-CVD制备多晶硅薄膜

    公开(公告)号：US08450191B2

    公开(公告)日：2013-05-28

    申请号：US13089966

    申请日：2011-04-19

    申请人： Anchuan Wang ,  Xiaolin Chen ,  Young S. Lee

    发明人： Anchuan Wang ,  Xiaolin Chen ,  Young S. Lee

    IPC分类号： H01L21/20 ,  H01L21/3205

    CPC分类号： H01L21/0262 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/28556

    摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.

    摘要翻译： 描述形成多晶硅层的方法。 所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。 所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。 偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。 当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

    High-throughput HDP-CVD processes for advanced gapfill applications
    7.
    发明授权
    High-throughput HDP-CVD processes for advanced gapfill applications 有权
    高通量HDP-CVD工艺，适用于先进的填缝应用

    公开(公告)号：US08414747B2

    公开(公告)日：2013-04-09

    申请号：US11941263

    申请日：2007-11-16

    申请人： Bo Qi ,  Young S. Lee

    发明人： Bo Qi ,  Young S. Lee

    IPC分类号： C23C14/34

    CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02274 ,  H01L21/31612

    摘要： Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio. A second high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a second deposition/sputter ratio. The second deposition/sputter ratio is less than the first deposition/sputter ratio. Each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.

    摘要翻译： 提供了在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 含硅气体，含氧气体和流动气体流入衬底处理室。 流动气体的平均分子量小于5 amu。 由含硅气体，含氧气体和流动气体形成第一高密度等离子体，以将第一部分氧化硅膜沉积在衬底上并且在间隙内，同时具有同时存在的第一沉积工艺 具有由第一沉积/溅射比限定的相对贡献的沉积和溅射部件。 由含硅气体，含氧气体和流动气体形成第二高密度等离子体，以将第二部分的氧化硅膜沉积在衬底上并在间隙内，同时具有同时存在的第二沉积工艺 沉积和溅射组分具有由第二沉积/溅射比定义的相对贡献。 第二沉积/溅射比小于第一沉积/溅射比。 第一和第二沉积/溅射比率中的每一个被定义为净沉积速率和覆盖溅射速率之和与覆盖溅射速率的比率。

    TASK MANAGEMENT IN A WORKFORCE ENVIRONMENT USING AN ACOUSTIC MAP CONSTRUCTED FROM AGGREGATED AUDIO
    8.
    发明申请
    TASK MANAGEMENT IN A WORKFORCE ENVIRONMENT USING AN ACOUSTIC MAP CONSTRUCTED FROM AGGREGATED AUDIO 有权
    使用从聚合音频构建的声学地图在工作环境中的任务管理

    公开(公告)号：US20120150578A1

    公开(公告)日：2012-06-14

    申请号：US12962782

    申请日：2010-12-08

    申请人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

    发明人： Pawitter Mangat ,  Timothy J. Collins ,  Young S. Lee

    IPC分类号： G06Q10/00 ,  H04B15/00 ,  G06Q30/00

    CPC分类号： G06Q10/00 ,  G06Q10/06311 ,  G06Q30/00 ,  G06Q30/0241

    摘要： Incoming audio from mobile devices can be centrally processed, where a server can filter background noise in real time, such as by using an XOR function. Instead of discarding the filtered noise, however, it can be processed in parallel to dynamically construct an acoustic map of the environment. The acoustic map can be generated from an aggregation of sound data from multiple devices positioned in a geographic environment. The acoustic map can be linked to a configurable set of rules, conditions, and events, which can cause dynamic adjustments to be made to a workforce task management system. For example, employee availability can be assessed using the acoustic map and workforce tasks can be assigned based in part upon this availability.

    摘要翻译： 可以集中处理来自移动设备的传入音频，其中服务器可以实时过滤背景噪声，例如使用XOR功能。 然而，代替放弃滤波后的噪声，可以并行处理，以动态构建环境声学图。 声学图可以从位于地理环境中的多个设备的声音数据的聚集生成。 声学图可以链接到可配置的一组规则，条件和事件，这可以导致对劳动力任务管理系统进行动态调整。 例如，可以使用声学图来评估员工的可用性，并且可以部分地基于这种可用性分配劳动力任务。