摘要:
In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.
摘要:
A vertically integrated hybrid component is implemented in the form of a wafer level package including: at least two element substrates assembled one above the other; a molded upper sealing layer made of an electrically insulating casting; and an external electrical contacting of the component being implemented on the top side via at least one contact stamp which is embedded in the sealing layer so that (i) its lower end is connected to a wiring level of an element substrate and (ii) its upper end is exposed in the surface of the sealing layer.
摘要:
Measures are provided for stress decoupling between a semiconductor component and its mounting support, these measures being implementable very easily, inexpensively and in a space-saving manner, regardless of the substrate thickness of the component, and not being limited to soldered connections but instead also being usable in conjunction with other mounting and joining techniques. These measures relate to components, which include at least one electrical and/or micromechanical functionality and at least one wiring level, which is formed in a layer structure on a main surface of the component substrate, at least one mounting surface being implemented in the wiring level to establish a mechanical and/or electrical connection of the component to a support. The at least one mounting surface is spring mounted and is separated from the layer structure in at least some areas for this purpose.