摘要:
A field oxide film for element isolation is formed on an SOI substrate having a silicon layer formed on an insulating layer, an active nitride film is wet-etched to reduce its film thickness to a value small enough to allow the edge of the silicon layer to become exposed and ions of a channel stopping impurity are implanted only into the edge of the silicon layer through self-alignment either vertically or at an angle by using the active nitride film as a mask. Through this manufacturing method, a field effect transistor which achieves a small gate length, is free from the adverse effect of a parasitic transistor and thus does not readily manifest a hump, and allows a reduction in the distance between an nMOS and a pMOS provided next to each other is realized.
摘要:
A method of fabricating a semiconductor device having a silicon layer disposed on an insulating film. Oxygen ions are implanted into selected parts of the silicon layer, which are then oxidized to form isolation regions dividing the silicon layer into a plurality of mutually isolated active regions. As the oxidation process does not create steep vertical discontinuities, fine patterns can be formed easily on the combined surface of the active and isolation regions. The implanted oxygen ions cause oxidation to proceed quickly, finishing before a pronounced bird's beak is formed. The isolation regions themselves can therefore be narrow and finely patterned.
摘要:
A vehicle seat may include a seat cushion movably supported on a vehicle floor bracket, a seat back rotatably supported forwardly and rearwardly on the vehicle floor bracket via a seat reclining mechanism, a connecting mechanism interconnecting the seat cushion and seat back, and a supporting mechanism supporting the seat cushion on a vehicle floor. The connecting mechanism is fixedly connected to the seat cushion and is rotatably connected to the seat back. The connecting mechanism is arranged and constructed such that when the seat back is rotated forwardly, the seat cushion can be moved forwardly and downwardly and that when the seat back is rotated rearwardly from its normal position, the seat cushion can be maintained in place and not be moved.
摘要:
In a method for fabricating a semiconductor device, a silicide material is formed at least on the surface of an area to be silicided. Then, a first RTA (Rapid Thermal Annealing) process is performed to form a first-reacted silicide region. Next, a supplemental silicon layer is formed over the entire surface; and a second RTA process is performed to form a second-reacted silicide region.
摘要:
A double folding mechanism of a seat of a vehicle can fold a seat cushion from a space on a floor and fold a seat back into the space, thereby changing the seat from its use condition to its retracted condition. The double folding mechanism can include a first connecting mechanism connecting the seat cushion and the floor and a second connecting mechanism connecting the seat back and the floor. The second connecting mechanism can control the rotational speed of the seat back such that the seat back can enter inside a rotational trajectory of a rear end of the seat cushion after the seat cushion comes out of a rotational trajectory of an upper end portion of the seat back. The double folding mechanism can change the seat from the use condition to the retracted condition in one operation.
摘要:
In a semiconductor device and method of manufacturing thereof, a semiconductor device having an SOI structure is provided with a capacitor including a first electrode in an SOI layer, a second electrode opposing the first electrode, and a dielectric film therebetween. An isolation region is provided as contained in the SOI layer to electrically isolate the first electrode from remaining areas of the SOI layer, such as active areas or the like. The method includes forming the isolation regions in the SOI layer, forming the first electrode in the SOI layer as electrically isolated from the remaining areas of the SOI layer by the isolation regions, forming the dielectric film on the first electrode, and forming the second electrode on the dielectric film opposite the first electrode.
摘要:
In a process for fabricating a semiconductor device having a trench at the surface of a semiconductor substrate, a first mask layer is formed to have an opening whose side is set back from an area where the trench will be formed, a second mask layer is formed on the side of the opening of the first mask layer with an opening corresponding to the area where the trench will be formed, and an etching is performed using the first and the second mask layer as a mask to form the trench.
摘要:
In a cover member storage structure that allows a user to manually move a folded cover member from a roof into a box in the vehicle interior, the cover member storage structure includes: a tray (30) on which a folded cover member (12) is placed; and a guide means (40) for guiding and supporting the tray (30) so that the tray (30) is moved from the first position (P1) at the rear side of the first rail (11b) to fold the cover member via a rotating position (P2) to the second position (P3) in the vehicle interior. The tray (30) is swung between the first (P1) and the second (P2) positions via a damper (37), and the guide means (40) includes: the second rails (41) along which the tray (30) is guided from the first position to the second position; and a biasing means (44) for biasing the tray (30) toward the roof position when the tray (30) is moved along the second rails (41).
摘要:
In an automobile having a seat cushion supporting the hip, and a seat back supporting the back, of a seated person wherein the seat back in its use position with the seat cushion folded thereon is lifted up to its non-use position in an upper part of the cabin, the seat back when moved from the use position to the non-use position is prevented from interfering with a seat disposed in its front. There is a guide means for guiding the seat back 12 so that it moves rearwards gradually when it is moved from the use position to the non-use position.
摘要:
In an automobile having a seat cushion 13 and a seat back 12 to be stored in an upper part of a vehicle interior, the seat cushion 13 and the seat back 12 can be lifted easily to the upper part position of the vehicle interior. The seat cushion 13 is rotatably coupled to the seat back 12 so that the seat cushion 13 can be superposed on the seat back 12, the seat back 12 is supported on a vehicle body 1 so that the superposed seat cushion 13 and seat back 12 can be rotated to the upper part of the vehicle interior, and a rear surface 12B of the seat back 12 is provided with a handle arm 16 that is grabbed by an operator to lift up the seat back 12 and the seat cushion 13 to the upper part of the vehicle interior.