公开(公告)号：US06833589B2

公开(公告)日：2004-12-21

申请号：US10075588

申请日：2002-02-15

申请人： Hideaki Matsuhashi ,  Yoko Kajita ,  Yoshihiro Koga ,  Toshiyuki Nakamura ,  Jun Kanamori

发明人： Hideaki Matsuhashi ,  Yoko Kajita ,  Yoshihiro Koga ,  Toshiyuki Nakamura ,  Jun Kanamori

IPC分类号： H01L29360

CPC分类号： H01L29/66772 ,  H01L21/76281 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/458 ,  H01L29/78612 ,  H01L29/78621 ,  H01L29/78654

摘要： A field oxide film for element isolation is formed on an SOI substrate having a silicon layer formed on an insulating layer, an active nitride film is wet-etched to reduce its film thickness to a value small enough to allow the edge of the silicon layer to become exposed and ions of a channel stopping impurity are implanted only into the edge of the silicon layer through self-alignment either vertically or at an angle by using the active nitride film as a mask. Through this manufacturing method, a field effect transistor which achieves a small gate length, is free from the adverse effect of a parasitic transistor and thus does not readily manifest a hump, and allows a reduction in the distance between an nMOS and a pMOS provided next to each other is realized.

摘要翻译： 用于元件隔离的场氧化膜形成在具有形成在绝缘层上的硅层的SOI衬底上，湿蚀刻活性氮化物膜以将其膜厚度减小到足以允许硅层的边缘 通过使用活性氮化物膜作为掩模，通过垂直或以一定角度的自对准将植入杂质的沟道的离子仅注入硅层的边缘。 通过这种制造方法，实现小栅极长度的场效应晶体管没有寄生晶体管的不利影响，因此不容易发现隆起，并且允许减小nMOS和下一个提供的pMOS之间的距离 相互实现。

公开(公告)号：US06727147B2

公开(公告)日：2004-04-27

申请号：US10164609

申请日：2002-06-10

申请人： Toshiyuki Nakamura ,  Hideaki Matsuhashi

发明人： Toshiyuki Nakamura ,  Hideaki Matsuhashi

IPC分类号： H01L218236

CPC分类号： H01L27/1203 ,  H01L21/26506 ,  H01L21/76281 ,  H01L21/84

摘要： An FET is fabricated on an SOI substrate by the following processes. Openings are formed in laminated layers of a pad oxide film of about 5-10 nm and an oxidation-resistant nitride film of about 50-150 nm at positions where device isolation regions are to be provided. The substrate is irradiated by an ion implantation apparatus with at least one of Ar ions and Si ions with an implantation energy of 40-50 keV, and a dose of 1×1014 to 5×1015 cm−2. Field oxidation is then conducted to electrically separate adjacent devices. The regions of the substrate where the openings are formed become amorphous when irradiated, and the field oxidation is consequently enhanced. Hence, a thermal oxidation film having sufficient thickness can be obtained even at device isolation regions having isolation widths of 0.2 &mgr;m or less.

摘要翻译： 通过以下工艺在SOI衬底上制造FET。 在要设置器件隔离区的位置处，在约5-10nm的衬垫氧化膜的层压层和约50-150nm的耐氧化氮化物膜上形成开口。 用离子注入装置用Ar离子和Si离子中的至少一种照射衬底，注入能量为40-50keV，剂量为1×10 14至5×10 15 cm -2。 然后进行场氧化以电隔离相邻的装置。 形成开口部的基板的区域在照射时成为非晶态，因此能够提高场氧化。 因此，即使在隔离宽度为0.2μm以下的器件分离区域，也可以获得具有足够厚度的热氧化膜。

公开(公告)号：US08486328B2

公开(公告)日：2013-07-16

申请号：US12837708

申请日：2010-07-16

申请人： Makoto Ohmori ,  Toshiyuki Nakamura ,  Takashi Ryu

发明人： Makoto Ohmori ,  Toshiyuki Nakamura ,  Takashi Ryu

IPC分类号： B22F3/10 ,  B22F7/08 ,  H01M2/16 ,  H01M2/18

CPC分类号： H01M8/0297 ,  H01M4/9033 ,  H01M8/0282 ,  H01M2008/1293 ,  Y10T428/2982

摘要： Powders of respective metal elements (Mn,Co) constituting a transition metal oxide (MnCo2O4) having a spinel type crystal structure are used as a starting material. A paste containing the mixture of the powders is interposed between an air electrode and an interconnector, and with this state, a sintering is performed, whereby a bonding agent according to the present invention can be obtained. This bonding agent has a “co-continuous structure”. In the “co-continuous structure”, a thickness of an arm portion that links many base portions to one another is 0.3 to 2.5 μm. The bonding agent includes a spherical particle in which plural crystal faces are exposed to the surface, the particle having a side with a length of 1 μm or more, among the plural sides constituting the outline of the crystal face. The diameter of the particle is 5 to 80 μm.

摘要翻译： 使用构成具有尖晶石型晶体结构的过渡金属氧化物（MnCo 2 O 4）的各金属元素（Mn，Co）的粉末作为原料。 将包含粉末混合物的糊剂置于空气电极和互连器之间，并且在该状态下进行烧结，由此可以获得本发明的粘合剂。 该粘合剂具有“共连续结构”。 在“共连续结构”中，将多个基部彼此连接的臂部的厚度为0.3〜2.5μm。 粘合剂包括构成晶面轮廓的多个面中的多个晶面暴露于表面的粒子，具有长度为1μm或更大的一侧的粒子。 颗粒直径为5-80μm。

公开(公告)号：US08354198B2

公开(公告)日：2013-01-15

申请号：US12645528

申请日：2009-12-23

申请人： Makoto Ohmori ,  Toshiyuki Nakamura ,  Takashi Ryu

发明人： Makoto Ohmori ,  Toshiyuki Nakamura ,  Takashi Ryu

IPC分类号： H01M8/10 ,  H01M8/12

CPC分类号： H01M8/021 ,  H01M8/0297 ,  H01M8/1213 ,  H01M8/1226 ,  Y10T29/49108

摘要： The present invention provides an electrochemical device including electrodes of an electrochemical cell and conductive connection members, wherein sufficient bonding strength is achieved between each of the electrodes and the corresponding conductive connection member through thermal treatment carried out at a temperature lower than 1,000° C. The electrochemical cell includes a solid electrolyte membrane and a pair of electrodes provided on the electrolyte membrane. The conductive connection members are electrically connected to the respective electrodes by means of a bonding layer. The bonding layer contains a transition metal oxide having a spinel-type crystal structure.

摘要翻译： 本发明提供一种电化学装置，其包括电化学电池和导电连接构件的电极，其中通过在低于1000℃的温度下进行的热处理，在每个电极和相应的导电连接构件之间实现了足够的接合强度。 电化学电池包括固体电解质膜和设置在电解质膜上的一对电极。 导电连接构件通过结合层电连接到各个电极。 接合层含有具有尖晶石型晶体结构的过渡金属氧化物。

公开(公告)号：US08352151B2

公开(公告)日：2013-01-08

申请号：US12779629

申请日：2010-05-13

申请人： Manabu Okinaka ,  Toshiyuki Nakamura

发明人： Manabu Okinaka ,  Toshiyuki Nakamura

IPC分类号： F02P19/02 ,  F02P19/00

CPC分类号： F02P19/025 ,  F02D41/005 ,  F02D41/064 ,  F02D41/10 ,  F02D2041/1409 ,  F02P19/026 ,  Y02T10/47

摘要： An electric current supply control apparatus for a glow plug, and glow plug and the electric current supply control apparatus connected to the glow plug. In a transition state in which the load acting on an engine increases such as at the time of acceleration (S14: YES), an instruction signal which instructs increasing of an EGR amount is transmitted to an ECU (S18). Further, electric current is supplied to a heat generation resistor of a glow plug through resistance PI control (S20), whereby the temperature of the heat generation resistor is stably maintained at a target temperature, and stability of combustion is enhanced. Thus, even at the time of acceleration, generation of NOX can be suppressed effectively by increasing the EGR amount without lowering the engine output.

摘要翻译： 一种用于电热塞的电流供应控制装置，以及电热塞和连接到电热塞的电流供应控制装置。 在加速时起作用于发动机的负荷变化的过渡状态（S14：是），向ECU发送指示增加EGR量的指示信号（S18）。 此外，通过电阻PI控制向电热塞的发热电阻器供给电流（S20），从而将发热电阻器的温度稳定地保持在目标温度，并且提高燃烧稳定性。 因此，即使在加速时，也可以通过增加EGR量而不降低发动机输出来有效地抑制NOX的产生。

公开(公告)号：USD665894S1

公开(公告)日：2012-08-21

申请号：US29377251

申请日：2010-10-19

申请人： Naoya Inada ,  Toshiyuki Nakamura ,  Toshiki Ogawara

设计人： Naoya Inada ,  Toshiyuki Nakamura ,  Toshiki Ogawara

公开(公告)号：US07933663B2

公开(公告)日：2011-04-26

申请号：US12330091

申请日：2008-12-08

申请人： Keiichi Teranisi ,  Naoaki Ikeno ,  Toshiyuki Nakamura ,  Takehiko Hioka ,  Yasuki Yoda ,  Isao Yamashita

发明人： Keiichi Teranisi ,  Naoaki Ikeno ,  Toshiyuki Nakamura ,  Takehiko Hioka ,  Yasuki Yoda ,  Isao Yamashita

IPC分类号： G05B19/18 ,  G06F13/00 ,  G06F15/76 ,  G06F15/00

CPC分类号： G05B19/0428 ,  G05B9/03 ,  G05B2219/13075 ,  G05B2219/24054

摘要： A safety master configured to communicate with a plurality of safety slaves over a safety field network or with a plurality of safety local I/O units connected by a safety back plane bus of the safety master, wherein each of the plurality of safety slaves and safety local I/O units allow connection to safety I/O devices in a plurality of cell equipment, and wherein the safety master receives a status signal indicating a “safe state” or an “unsafe state” related to cell equipment from each of the corresponding plurality of safety slaves or safety local I/O units, and controls operation/stop of cell equipment by executing an interlock operation program with the received status signal as an input to output an operation instruction signal.

摘要翻译： 一种安全主机，被配置为与多个安全从站通过安全现场网络或通过安全主机的安全背板总线连接的多个安全本地I / O单元进行通信，其中多个安全从站和安全系统中的每一个 本地I / O单元允许连接到多个小区设备中的安全I / O设备，并且其中安全主机从相应的每个单元设备接收到指示与小区设备相关的“安全状态”或“不安全状态”的状态信号 多个安全从站或安全本地I / O单元，并且通过执行具有接收到的状态信号作为输入的联锁操作程序来控制电池设备的操作/停止，以输出操作指令信号。

公开(公告)号：US07840430B2

公开(公告)日：2010-11-23

申请号：US11221043

申请日：2005-09-06

申请人： Toshiyuki Nakamura

发明人： Toshiyuki Nakamura

IPC分类号： G06F17/50

CPC分类号： G05B19/058 ,  G06Q10/063

摘要： A risk evaluation support device is used for a safety network which serves to cause an output device to make a controlled device operable based on a detection signal outputted from an input device when the input device detects a safety condition. The support device creates a parameter setting table for correlating a danger source with the input and output devices and a PLC for risk evaluation based on configuration data of the safety network obtained through a communication part and device data on devices obtained from a component database. Operating data for the safety network are obtained according to conditions provided by the parameter setting table and a current risk evaluation value for the danger source is calculated based on the obtained operating data. The calculated risk evaluation value is outputted to a display part.

摘要翻译： 风险评估支持装置用于安全网络，该安全网络用于当输入装置检测到安全条件时，基于从输入装置输出的检测信号使输出装置使受控装置可操作。 支持装置根据通过部件获取的安全网络的配置数据和从组件数据库获得的设备，创建用于将危险源与输入和输出设备相关联的参数设置表和用于风险评估的PLC。 根据参数设置表提供的条件获取安全网络的操作数据，并根据获得的操作数据计算危险源的当前风险评估值。 将计算出的风险评估值输出到显示部。

公开(公告)号：US20100213170A1

公开(公告)日：2010-08-26

申请号：US12597602

申请日：2008-06-19

申请人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

IPC分类号： C23F4/00

CPC分类号： H01L21/68735 ,  C23F4/00 ,  G11C11/22 ,  H01J37/321 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/3266 ,  H01J2237/022 ,  H01J2237/2001 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11507 ,  H01L27/1159

摘要： An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.5 or more

摘要翻译： 一种蚀刻方法，其使用具有其中蚀刻气体被等离子体激发的室的装置; 设置在所述室中的加热安装在其上的基板的台; 以及框架构件，其包括布置在工作台周围的耐腐蚀材料，并且具有布置在比工作台的上表面低的位置的上表面，所述蚀刻方法包括：将所述衬底布置在所述衬底的上表面上 使得基板的周边部分在工作台上方突出; 以及将所述基板从所述框架构件的上表面的高度与所述基板的底面的高度与从所述台的侧面到所述基板的外周的突出长度的比例设定为1.5以上

公开(公告)号：US07645130B2

公开(公告)日：2010-01-12

申请号：US11816944

申请日：2006-01-30

申请人： Shin Sekiya ,  Masayuki Kakuda ,  Toshihide Koda ,  Toshiyuki Nakamura ,  Kunio Tojo ,  Kenji Yano ,  Masaaki Sugawa ,  Fumihiko Ishizono ,  Masahiro Sugihara

发明人： Shin Sekiya ,  Masayuki Kakuda ,  Toshihide Koda ,  Toshiyuki Nakamura ,  Kunio Tojo ,  Kenji Yano ,  Masaaki Sugawa ,  Fumihiko Ishizono ,  Masahiro Sugihara

IPC分类号： F04C18/02 ,  F01C1/02

CPC分类号： F04C27/005 ,  F04C18/0223 ,  F04C18/0284 ,  F04C23/008 ,  F04C27/001 ,  F04C27/009 ,  F04C2210/1027 ,  F04C2210/1072

摘要： A scroll compressor that has reduced leakage loss and high efficiency includes an orbiting scroll that has spiral teeth on two surfaces, and a fixed scrolls that face the surfaces of the orbiting scroll and that have spiral teeth that intermesh with the spiral of the orbiting scroll. Tip seals are mounted only to a spiral tooth of one of the fixed scrolls that intermeshes with a spiral tooth of the orbiting scroll and a spiral tooth of the orbiting scroll.

摘要翻译： 具有减少的泄漏损失和高效率的涡旋压缩机包括在两个表面上具有螺旋齿的绕动涡旋件和面对绕动涡旋盘表面并具有与旋转涡旋件的螺旋相互啮合的螺旋齿的固定涡卷。 尖端密封件仅安装在与旋转涡旋件的螺旋齿和旋转涡旋件的螺旋齿相互啮合的固定涡旋件之一的螺旋齿上。