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公开(公告)号：US5814918A
公开(公告)日：1998-09-29
申请号：US689296
申请日：1996-08-07
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer a ZnO layer and an SiO.sub.2 layer, which can be operated at the frequency of 2 GHz or higher, with superior durability and less energy loss. The SAW device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: (i) a diamond layer, (ii) a ZnO layer formed on the diamond layer, the ZnO layer having a thickness t.sub.z, (iii) an interdigital transducer (IDT) formed over the ZnO layer, and (iv) a SiO.sub.2 layer formed over the interdigital transducer onto the ZnO layer, the SiO.sub.2 layer having a thickness of t.sub.s ; wherein parameters kh.sub.z =(2.pi./.lambda.)t.sub.z and kh.sub.s =(2.pi./.lambda.)t.sub.s are given within a region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A in a two-dimensional Cartesian coordinate graph having abscissa axis of kh.sub.z and ordinate axis of kh.sub.s, the outer edge of the region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q and R and lines A-B, B-C, C-D, D-E, E-F, F-G, G-H, H-I, I-J, J-K, K-L, L-M, M-N, N-O, O-P, P-Q, Q-R and R-A, as shown in FIG. 1.
摘要翻译： 本发明涉及一种SAW器件，其包括金刚石层，ZnO层和SiO 2层，其可以以2GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。 根据本发明的波长λ（μm）的第二模式表面声波的SAW器件包括：（i）金刚石层，（ii）在金刚石层上形成的ZnO层，ZnO层具有厚度tz ，（iii）在ZnO层上形成的叉指式换能器（IDT），以及（iv）在叉状换能器上形成在ZnO层上的SiO 2层，SiO 2层的厚度为ts; 其中参数khz =（2π/λ）tz和khs =（2π/λ）ts在具有khz的纵轴和khs的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFGHIJKLMNOPQRA内给出， 区域ABCDEFGHIJKLMNOPQRA由笛卡尔坐标中的闭环提供，由点A，B，C，D，E，F，G，H，I，J，K，L，M，N，O，P，Q组成 以及R和线AB，BC，CD，DE，EF，FG，GH，HI，IJ，JK，KL，LM，MN，NO，OP，PQ，QR和RA。 1。
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公开(公告)号：US5426340A
公开(公告)日：1995-06-20
申请号：US188536
申请日：1994-01-27
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further includes a paired interdigital transducer and grounding electrode, which perform an electro-mechanical conversion, with the piezoelectric layer arranged therebetween. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into a piezoelectric material of ZnO. Therefore, the adhesion between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the device yield is enhanced, and a high electromechanical coupling coefficient can be achieved in a high frequency range.
摘要翻译： 表面声波装置包括由金刚石或类金刚石碳膜构成的硬质层和形成在硬质层上的压电层。 它还包括一个成对的叉指式换能器和接地电极，它们进行机电转换，压电层位于它们之间。 然后，本发明的特征在于形成导电氧化物的接地电极。 优选的是，通过将杂质掺杂到ZnO的压电材料中形成导电氧化物。 因此，压电层与硬质层和接地电极之间的粘附性增加，从而提高了器件成品率，并且可以在高频范围内实现高的机电耦合系数。
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公开(公告)号：US5501909A
公开(公告)日：1996-03-26
申请号：US196609
申请日：1994-02-15
CPC分类号： C23C16/56 , C23C16/27 , H03H9/02582 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A diamond substrate having a smooth surface, including a polycrystalline diamond film having a surface with a pit, and an insulating material other than diamond, which occupies the pit.
摘要翻译： 具有光滑表面的金刚石基底，包括具有凹坑的表面的多晶金刚石薄膜和占据凹坑的除金刚石之外的绝缘材料。
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公开(公告)号：US5497726A
公开(公告)日：1996-03-12
申请号：US240826
申请日：1994-05-11
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。
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公开(公告)号：US5446329A
公开(公告)日：1995-08-29
申请号：US118976
申请日：1993-09-09
CPC分类号： H03H9/02582
摘要： A surface acoustic wave element includes a hard layer containing a composition component essentially consisting of at least one of diamond and a diamond-like carbon film, a piezoelectric layer formed on the hard layer, a silicon dioxide (SiO.sub.2) layer formed on the piezoelectric layer, and electrodes combined with the piezoelectric layer to perform electro-mechanical conversion. The surface acoustic wave element has a larger electro-mechanical coupling coefficient and a higher surface acoustic wave propagation velocity than does a conventional surface acoustic wave element having no silicon dioxide layer, thereby obtaining a surface acoustic wave element that can operate in a high-frequency range. In particular, the electro-mechanical coupling coefficient is increased. The SiO.sub.2 layer is an electric insulator and rarely reacts with moisture or acids. The SiO.sub.2 layer protects the piezoelectric layer and the electrodes from effects of the external environment, thereby providing a surface acoustic wave element having good high-frequency characteristics and a high resistance to adverse environments.
摘要翻译： 表面声波元件包括含有基本上由金刚石和类金刚石碳膜中的至少一种组成的组成成分的硬质层，形成在硬质层上的压电层，形成在压电层上的二氧化硅（SiO 2）层 和与压电层结合的电极进行机电转换。 表面声波元件比没有二氧化硅层的常规表面声波元件具有更大的机电耦合系数和更高的表面声波传播速度，从而获得可以在高频下工作的表面声波元件 范围。 特别地，机电耦合系数增加。 SiO2层是电绝缘体，很少与水分或酸反应。 SiO 2层保护压电层和电极免受外部环境的影响，从而提供具有良好的高频特性和对不利环境的高抗性的表面声波元件。
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公开(公告)号：US5343107A
公开(公告)日：1994-08-30
申请号：US117226
申请日：1993-09-03
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 在具有上述结构的表面声波元件中，由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。
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公开(公告)号：US06984918B1
公开(公告)日：2006-01-10
申请号：US10089804
申请日：2000-10-04
CPC分类号： H03H9/02582 , H03H9/02574
摘要： The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.
摘要翻译： 本发明提供一种表面声波装置，其包括金刚石，其工作频率在几百MHz至几十GHz的范围内，并且能够在高频下操作。 本发明的声表面波器件包括金刚石层或基底层和金刚石层，ZnO压电层，叉指式换能器和短路电极层，其特征在于（2pi.H /λ< M 3）在3.0至10.0的范围内，其中ZnO层的厚度为H，声表面波的波长为λM。
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公开(公告)号：US06469416B1
公开(公告)日：2002-10-22
申请号：US09959954
申请日：2001-11-13
IPC分类号： H03H925
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/02582
摘要： A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
摘要翻译： 提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波（SAW）装置。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ，其方程式为kh1 = 5.2pi（tz / lambd）和kh2 = 5.2pi（ts / lambd），其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。
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公开(公告)号：US06448688B2
公开(公告)日：2002-09-10
申请号：US09739210
申请日：2000-12-19
IPC分类号： H01L4108
CPC分类号： C23C16/26 , H03H3/08 , H03H9/02582 , Y10T428/30
摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.
摘要翻译： 本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。 硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。
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公开(公告)号：US06713941B2
公开(公告)日：2004-03-30
申请号：US10204454
申请日：2002-08-21
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.
摘要翻译： 一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波（SAW）器件。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ，其方程式为kh1 = 3.2pi（tz /λ）和kh2 = 3.2pi（ts / lambda），其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。
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