公开(公告)号：US5781255A

公开(公告)日：1998-07-14

申请号：US725256

申请日：1996-10-04

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

IPC分类号： G02F1/133 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2001/136295

摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

摘要翻译： 在扫描信号线和栅电极上形成有阳极氧化膜Al。 Al-Ta用作扫描信号线和栅电极的材料。 阳极化氧化膜的厚度设定为1000埃以上。 可以提高制造产量和可靠性。

公开(公告)号：US06226059B1

公开(公告)日：2001-05-01

申请号：US09098541

申请日：1998-06-17

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

IPC分类号： G02F1136

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2001/136295

摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al—Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.

摘要翻译： 在扫描信号线和栅电极上形成有阳极氧化膜Al。 Al-Ta用作扫描信号线和栅电极的材料。 阳极化氧化膜的厚度设定为至少1000埃。 可以提高制造产量和可靠性。

公开(公告)号：US5589962A

公开(公告)日：1996-12-31

申请号：US467967

申请日：1995-06-06

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

IPC分类号： G02F1/133 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2001/136295

摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

摘要翻译： 在扫描信号线和栅电极上形成有阳极氧化膜Al。 使用含有Ta和Ti的Al的合金作为扫描信号线和栅电极的材料。 阳极化氧化膜的厚度设定为1000埃以上。 可以提高制造产量和可靠性。

公开(公告)号：US06767760B2

公开(公告)日：2004-07-27

申请号：US10166311

申请日：2002-06-11

申请人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

发明人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

IPC分类号： H01L2100

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.

摘要翻译： 通过用激光照射结晶的多晶硅层，在500℃以下的加工温度下进料由臭氧气体和H 2 O或N 2 O气体构成的混合气体，或者多晶硅层预先用溶液 作为臭氧水或NH 3 /过氧化氢水溶液，随后用臭氧进行氧化处理，在多晶硅层的表面形成厚度为4nm以上的氧化硅层，以形成具有较小变化的薄膜晶体管 未退火玻璃基板上的特性。

公开(公告)号：US4607168A

公开(公告)日：1986-08-19

申请号：US511333

申请日：1983-07-06

申请人： Ryoji Oritsuki ,  Susumu Saito ,  Hiromi Kanai

发明人： Ryoji Oritsuki ,  Susumu Saito ,  Hiromi Kanai

IPC分类号： H01L27/146 ,  H01J40/14

CPC分类号： H01L27/14643 ,  H01L27/14665

摘要： A photosensor array device comprises a line sensor including a plurality of sets of sensors juxtaposed on a transparent glass substrate. Each set comprises an amorphous silicon photodiode, a crosstalk preventing element in the form of a diode or a transistor and a matrix wiring connected to the element. A selector is provided for driving the crosstalk preventing elements of the line sensor. The photodiode and the crosstalk preventing element are formed integrally.

摘要翻译： 光传感器阵列器件包括线传感器，其包括并置在透明玻璃衬底上的多组传感器。 每组包括非晶硅光电二极管，二极管或晶体管形式的串扰防止元件和连接到元件的矩阵布线。 提供了用于驱动线路传感器的防串扰元件的选择器。 光电二极管和防串扰元件整体形成。

公开(公告)号：US06710824B2

公开(公告)日：2004-03-23

申请号：US09973775

申请日：2001-10-11

申请人： Nobuyuki Suzuki ,  Ryoji Oritsuki ,  Yasushi Nakano

发明人： Nobuyuki Suzuki ,  Ryoji Oritsuki ,  Yasushi Nakano

IPC分类号： G02F113

CPC分类号： G02F1/136204 ,  G02F1/1345

摘要： Pixel areas surrounded by scanning signal lines, video signal lines, and counter signal lines are formed on a liquid-crystal-side surface of a transparent substrate, and include thin-film transistors driven by scanning signals from the scanning signal lines, pixel electrodes to which video signals from the video signal lines are supplied via the thin-film transistors, and counter electrodes spaced apart from the pixel electrodes and connected to the counter signal lines. To prevent leakage current from flowing from the scanning signal lines or the video signal lines to the counter signal lines, a common line is formed around a display area constituted by the pixel areas, the video signal lines and the scanning signal lines are connected to the common line by non-linear elements, and the counter signal lines are connected to the common line by high-resistance elements.

摘要翻译： 由扫描信号线，视频信号线和反相信号线包围的像素区域形成在透明基板的液晶侧表面上，并且包括由扫描信号线，像素电极的扫描信号驱动的薄膜晶体管 来自视频信号线的视频信号经由薄膜晶体管提供，以及与像素电极间隔开并连接到计数器信号线的对置电极。 为了防止漏电流从扫描信号线或视频信号线流向计数信号线，在由像素区域构成的显示区域周围形成共同的线，视频信号线和扫描信号线连接到 公共线由非线性元件，并且计数器信号线通过高电阻元件连接到公共线。

公开(公告)号：US06570184B2

公开(公告)日：2003-05-27

申请号：US10050154

申请日：2002-01-18

申请人： Kazuhiko Horikoshi ,  Klyoshi Ogata ,  Takuo Tamura ,  Miwako Nakahara ,  Makoto Ohkura ,  Ryoji Oritsuki ,  Yasushi Nakano ,  Takeo Shiba

发明人： Kazuhiko Horikoshi ,  Klyoshi Ogata ,  Takuo Tamura ,  Miwako Nakahara ,  Makoto Ohkura ,  Ryoji Oritsuki ,  Yasushi Nakano ,  Takeo Shiba

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L29/4908 ,  H01L29/78603

摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.

摘要翻译： 使用廉价的未退火玻璃作为基材。 掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜 硅。 由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

公开(公告)号：US20050185106A1

公开(公告)日：2005-08-25

申请号：US11111872

申请日：2005-04-22

申请人： Nobuyuki Suzuki ,  Ryoji Oritsuki ,  Yasushi Nakano

发明人： Nobuyuki Suzuki ,  Ryoji Oritsuki ,  Yasushi Nakano

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1333

CPC分类号： G02F1/136204 ,  G02F1/1345

摘要： A liquid crystal display device includes first and second substrates, a liquid crystal layer, a plurality of video signal lines and scanning signal lines formed on the first delimiting pixel regions, a plurality of video signal line driving circuits, and a thin film transistor formed in the pixel regions, and driven by a scanning signal from a scanning signal line. A display area contains a plurality of the pixel regions and a first and second protection element lines are formed at a peripheral portion of the display area and connected to the video signal lines by first and second high-resistance elements. A first circuit board is electrically connected with a portion of the video signal line driving circuits and a second circuit board is electrically connected with another portion of the video signal line driving circuits.

摘要翻译： 液晶显示装置包括第一和第二基板，液晶层，多个视频信号线和形成在第一限定像素区域上的扫描信号线，多个视频信号线驱动电路和形成在 像素区域，并由来自扫描信号线的扫描信号驱动。 显示区域包含多个像素区域，并且第一和第二保护元件线形成在显示区域的周边部分并且通过第一和第二高电阻元件连接到视频信号线。 第一电路板与视频信号线驱动电路的一部分电连接，第二电路板与视频信号线驱动电路的另一部分电连接。

公开(公告)号：US4482804A

公开(公告)日：1984-11-13

申请号：US418563

申请日：1982-09-15

申请人： Ryoji Oritsuki ,  Yukio Ichimura ,  Hiromi Kanai ,  Kenichi Shimada

发明人： Ryoji Oritsuki ,  Yukio Ichimura ,  Hiromi Kanai ,  Kenichi Shimada

IPC分类号： H04N1/028 ,  H01L27/146 ,  H04N1/031 ,  H04N1/036

CPC分类号： H01L27/14643 ,  H04N1/031

摘要： In a photosensor apparatus of the type including one dimensional photosensor array in which a plurality of photosensors mounted on a transparent substrate at a predetermined spacing are respectively connected in series with blocking diodes which select outputs of the photosensors. Each one of the photosensors comprises a plurality of laminated amorphous silicon diodes comprising p-i-n junction layers. Each blocking diode comprises at least one amorphous silicon diode having a p-i-n junction layer, and each photosensor generates an electromotive force larger than a forward voltage drop across each blocking diode.

摘要翻译： 在包括一维光电传感器阵列的类型的光电传感器装置中，其中以预定间隔安装在透明基板上的多个光电传感器分别与选择光电传感器的输出的阻塞二极管串联连接。 每个光电传感器包括多个包含p-i-n结层的叠层非晶硅二极管。 每个阻塞二极管包括至少一个具有p-i-n结层的非晶硅二极管，并且每个光电传感器产生大于每个阻塞二极管的正向压降的电动势。

公开(公告)号：US06888584B2

公开(公告)日：2005-05-03

申请号：US10798329

申请日：2004-03-12

申请人： Nobuyuki Suzuki ,  Ryoji Oritsuki ,  Yasushi Nakano

发明人： Nobuyuki Suzuki ,  Ryoji Oritsuki ,  Yasushi Nakano

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/13

CPC分类号： G02F1/136204 ,  G02F1/1345

摘要： A liquid crystal display device having a first substrate, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, a plurality of video signal lines and scanning signal lines formed on the first substrate, and defining pixel regions, a thin film transistor formed in the pixel regions, and driven by a scanning signal from the scanning signal line for supplying video signal from one of the video signal lines to a pixel electrode and a display area containing a plurality of the pixel regions. A first protection element line formed at a peripheral portion of the display area, and being connected to a odd-numbered ones of the video signal lines by first high-resistance elements, and a second protection element line formed at a peripheral portion of the display area, and being connected to even-numbered ones of the video signal lines by second high-resistance elements.

摘要翻译： 一种具有第一基板，第二基板，插入在第一基板和第二基板之间的液晶层的液晶显示装置，形成在第一基板上的多个视频信号线和扫描信号线，并且限定像素区域， 薄膜晶体管形成在像素区域中，并且被来自扫描信号线的扫描信号驱动，用于将来自视频信号线之一的视频信号提供给像素电极和包含多个像素区域的显示区域。 第一保护元件线，形成在显示区域的周边部分，并且通过第一高电阻元件连接到奇数编号的视频信号线;以及第二保护元件线，形成在显示器的周边部分 并且通过第二高电阻元件连接到偶数编号的视频信号线。