公开(公告)号：US06767760B2

公开(公告)日：2004-07-27

申请号：US10166311

申请日：2002-06-11

申请人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

发明人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

IPC分类号： H01L2100

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.

摘要翻译： 通过用激光照射结晶的多晶硅层，在500℃以下的加工温度下进料由臭氧气体和H 2 O或N 2 O气体构成的混合气体，或者多晶硅层预先用溶液 作为臭氧水或NH 3 /过氧化氢水溶液，随后用臭氧进行氧化处理，在多晶硅层的表面形成厚度为4nm以上的氧化硅层，以形成具有较小变化的薄膜晶体管 未退火玻璃基板上的特性。

公开(公告)号：US06815717B2

公开(公告)日：2004-11-09

申请号：US09988585

申请日：2001-11-20

申请人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

发明人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

IPC分类号： H01L2904

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

公开(公告)号：US06903371B2

公开(公告)日：2005-06-07

申请号：US10773950

申请日：2004-02-06

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06657227B2

公开(公告)日：2003-12-02

申请号：US09910314

申请日：2001-07-19

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US20050202612A1

公开(公告)日：2005-09-15

申请号：US11123496

申请日：2005-05-04

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US07227186B2

公开(公告)日：2007-06-05

申请号：US11123496

申请日：2005-05-04

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06716688B2

公开(公告)日：2004-04-06

申请号：US10299218

申请日：2002-11-18

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US06905928B2

公开(公告)日：2005-06-14

申请号：US10143192

申请日：2002-05-09

申请人： Naoki Kanda ,  Arito Ogawa ,  Eisuke Nishitani ,  Miwako Nakahara ,  Tadanori Yoshida ,  Kiyoshi Ogata

发明人： Naoki Kanda ,  Arito Ogawa ,  Eisuke Nishitani ,  Miwako Nakahara ,  Tadanori Yoshida ,  Kiyoshi Ogata

IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L21/823828 ,  H01L21/2807 ,  H01L21/823857

摘要： When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.

公开(公告)号：US06870224B2

公开(公告)日：2005-03-22

申请号：US10641908

申请日：2003-08-15

申请人： Naoki Kanda ,  Arito Ogawa ,  Eisuke Nishitani ,  Miwako Nakahara ,  Tadanori Yoshida ,  Kiyoshi Ogata

发明人： Naoki Kanda ,  Arito Ogawa ,  Eisuke Nishitani ,  Miwako Nakahara ,  Tadanori Yoshida ,  Kiyoshi Ogata

IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L21/823828 ,  H01L21/2807 ,  H01L21/823857

摘要： When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.

摘要翻译： 在多晶硅锗膜用于MOS晶体管装置中的栅电极时，由于硅锗颗粒中的应力，存在栅极绝缘膜的可靠性降低的问题。 因此，在氧化膜上形成粒径为10nm以下的硅微粒之后，形成多晶硅锗膜。 结果，可以实现使用膜厚度为1.5nm以下的超薄氧化膜的高速MOS晶体管装置，其中与氧化膜界面的多晶硅锗的Ge浓度为 均匀，从而降低膜中的应力，并提高栅电极的可靠性。

公开(公告)号：US20050142701A1

公开(公告)日：2005-06-30

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜。 测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测定下一非晶硅膜的平均膜厚。 基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。 能量密度的值被反馈到激光束照射系统。 如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。 因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。 结果，可以在大面积上形成多晶硅TFT。