公开(公告)号：US07015079B2

公开(公告)日：2006-03-21

申请号：US10771404

申请日：2004-02-05

申请人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

发明人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3 to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

摘要翻译： 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素添加到半导体膜中，半导体膜具有薄膜内的非晶结构和氧浓度小于5×10 18 / cm 3。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入到具有晶体结构的半导体膜中，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 6 > 21 3/3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

公开(公告)号：US06777713B2

公开(公告)日：2004-08-17

申请号：US10265634

申请日：2002-10-08

申请人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

发明人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L2900

CPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3 to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

摘要翻译： 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素加入到膜内的非晶结构和氧浓度小于5×10 18 / cm 3的半导体膜中。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入具有晶体结构的半导体膜，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 21 / cm 3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

公开(公告)号：US07141823B2

公开(公告)日：2006-11-28

申请号：US10254670

申请日：2002-09-26

申请人： Takashi Hamada ,  Hidekazu Miyairi ,  Takuya Matsuo ,  Naoki Makita ,  Katsumi Nomura

发明人： Takashi Hamada ,  Hidekazu Miyairi ,  Takuya Matsuo ,  Naoki Makita ,  Katsumi Nomura

IPC分类号： H01L31/072

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863

摘要： In a TFT with a GOLD structure, there is provided a structure which is able to improve an operating characteristic and reliability and reduce an off current value in order to reduce power consumption of a semiconductor device. The surface of LDD region (4) overlapped with a portion (7a) of a gate electrode through a gate insulating film (6) interposed therebetween is extremely flattened. Thus, it is possible to obtain a TFT structure which is capable of reducing a parasitic capacitance in the LDD region of the TFT with the GOLD structure, reducing an off current value, improving reliability, and enabling high speed operation.

摘要翻译： 在具有GOLD结构的TFT中，提供了能够提高工作特性和可靠性并降低截止电流值以降低半导体器件的功耗的结构。 通过栅绝缘膜（6）与栅电极的部分（7a）重叠的LDD区（4）的表面极其平坦化。 因此，可以获得能够降低具有GOLD结构的TFT的LDD区域中的寄生电容的TFT结构，从而降低截止电流值，提高可靠性并实现高速运行。

公开(公告)号：US07087504B2

公开(公告)日：2006-08-08

申请号：US10133588

申请日：2002-04-29

申请人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

发明人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026 ,  H01L21/6708 ,  H01L21/67167 ,  H01L21/67213 ,  H01L29/66757 ,  H01L29/78675

摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

摘要翻译： 提供了一种用于制造其电特性几乎没有偏差的TFT的技术。 在除去形成在半导体膜表面上的自然氧化物膜之后，通过进行具有有机物去除效果的氧化处理，形成清洁的氧化物膜来减少半导体膜的污染。 通过使用在TFT的有源层中获得的半导体膜，可以获得其电特性几乎没有色散的TFT，并且可以提高电性能。 此外，通过使用本发明的半导体制造装置，可以将生产率和生产量的劣化降低到最小。

公开(公告)号：US20060009015A1

公开(公告)日：2006-01-12

申请号：US11221773

申请日：2005-09-09

申请人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

发明人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026 ,  H01L21/6708 ,  H01L21/67167 ,  H01L21/67213 ,  H01L29/66757 ,  H01L29/78675

摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

公开(公告)号：US07217952B2

公开(公告)日：2007-05-15

申请号：US11221773

申请日：2005-09-09

申请人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

发明人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L29/04

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026 ,  H01L21/6708 ,  H01L21/67167 ,  H01L21/67213 ,  H01L29/66757 ,  H01L29/78675

摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

摘要翻译： 提供了一种用于制造其电特性几乎没有偏差的TFT的技术。 在除去形成在半导体膜表面上的自然氧化物膜之后，通过进行具有有机物去除效果的氧化处理，形成清洁的氧化物膜来减少半导体膜的污染。 通过使用在TFT的有源层中获得的半导体膜，可以获得其电特性几乎没有色散的TFT，并且可以提高电性能。 此外，通过使用本发明的半导体制造装置，可以将生产率和生产量的劣化降低到最小。

公开(公告)号：US06998641B2

公开(公告)日：2006-02-14

申请号：US10183056

申请日：2002-06-27

申请人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

发明人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

IPC分类号： H01L31/112

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/78612 ,  H01L29/78621

摘要： In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n-type impurity and a p-type impurity with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

摘要翻译： 为了解决在n沟道TFT中吸杂效率差的问题，本发明在n沟道TFT的源极/漏极区域的末端提供了一种高效率的吸杂区域，其包含n型杂质 以及p型杂质浓度高于n型杂质浓度的p型杂质。

公开(公告)号：US20050170573A1

公开(公告)日：2005-08-04

申请号：US11088888

申请日：2005-03-25

申请人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

发明人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L27/08 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/78612 ,  H01L29/78621

摘要： Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

摘要翻译： 解决了在源极/漏极吸杂方法中关于n沟道TFT的现有技术中的问题。 在n沟道TFT中，其源极/漏极区仅包含n型杂质。 因此，与源极/漏极区域包含n型杂质和较高浓度的p型杂质的p沟道TFT相比，n沟道晶体管的沟道区域的吸杂效率较差。 因此，可以通过在其源极/漏极区域的末端设置包含n型杂质的高效吸气区域和浓度为p型的p型杂质来解决n沟道TFT的吸杂效率差的问题 的p型杂质的浓度高于n型杂质浓度。

公开(公告)号：US07625786B2

公开(公告)日：2009-12-01

申请号：US11088888

申请日：2005-03-25

申请人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

发明人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/78612 ,  H01L29/78621

摘要： Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

摘要翻译： 解决了在源极/漏极吸杂方法中关于n沟道TFT的现有技术中的问题。 在n沟道TFT中，其源极/漏极区仅包含n型杂质。 因此，与源极/漏极区域包含n型杂质和较高浓度的p型杂质的p沟道TFT相比，n沟道晶体管的沟道区域的吸杂效率较差。 因此，可以通过在其源极/漏极区域的末端设置包含n型杂质的高效吸气区域和浓度为p型的p型杂质来解决n沟道TFT的吸杂效率差的问题 的p型杂质的浓度高于n型杂质浓度。

公开(公告)号：US06756608B2

公开(公告)日：2004-06-29

申请号：US10227549

申请日：2002-08-26

申请人： Kenji Kasahara ,  Naoki Makita ,  Takuya Matsuo

发明人： Kenji Kasahara ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L2904

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A semiconductor device which has satisfactory characteristics is provided. The semiconductor device includes a TFT manufactured by using a satisfactory crystalline semiconductor film and a circuit manufactured by using the TFT. An n-type impurity element (typically, phosphorous) is added to a gettering region of an n-channel TFT. A p-type impurity element (typically, boron) and a rare gas element (typically, argon) are added to a gettering region of a p-channel TFT. Then, there is performed heat treatment for gettering a catalytic element that remains in a semiconductor film.

摘要翻译： 提供了具有令人满意的特性的半导体器件。 半导体器件包括通过使用令人满意的晶体半导体膜和通过使用TFT制造的电路制造的TFT。 n型杂质元素（通常为磷）被添加到n沟道TFT的吸杂区域。 p型杂质元素（通常为硼）和稀有气体元素（通常为氩）被添加到p沟道TFT的吸杂区域。 然后，进行热处理以吸收留在半导体膜中的催化元素。