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公开(公告)号：US20110067755A1
公开(公告)日：2011-03-24
申请号：US12993232
申请日：2009-05-19
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/0322 , C23C14/185 , C23C14/3414 , C23C14/5866 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02579 , H01L21/02614 , H01L21/02631 , H01L21/02658 , H01L31/0323 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a CIS-based thin film solar cell that achieves high photoelectric conversion efficiency comprises: forming a backside electrode layer on a substrate; forming a p-type CIS-based light absorbing layer thereon; and further forming an n-type transparent and electrically conductive film. The above-mentioned forming a p-type CIS-based light absorbing layer comprises: forming a metal precursor film (30a) at least comprising a first metal layer (31, 32) containing a I group element and a second metal layer (33) containing a III group element; and selenizing and/or sulfurizing the metal precursor film, and the above-mentioned forming the metal precursor film includes forming either one of the first metal layer (31, 32) or the second metal layer (33) of at least two layers including a layer (31) that contains an alkali metal and a layer (32) that substantially does not contain the alkali metal.
摘要翻译： 实现高光电转换效率的CIS系薄膜太阳能电池的制造方法包括：在基板上形成背面电极层; 在其上形成p型CIS基光吸收层; 并进一步形成n型透明导电膜。 上述形成p型CIS系的光吸收层包括：形成至少包含含有I族元素的第一金属层（31,32）和第二金属层（33）的金属前体膜（30a） 含有III族元素; 并且对金属前体膜进行硒化和/或硫化，并且上述形成金属前体膜包括形成至少两层的第一金属层（31,32）或第二金属层（33）中的任一个，包括 含有碱金属的层（31）和基本上不含碱金属的层（32）。
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公开(公告)号：US20100210064A1
公开(公告)日：2010-08-19
申请号：US12671068
申请日：2009-05-18
IPC分类号： H01L31/032
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.
摘要翻译： 为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2） 。 然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5） 层（3）。 此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22） 其基本上不含有碱金属。
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公开(公告)号：US07989256B2
公开(公告)日：2011-08-02
申请号：US12671068
申请日：2009-05-18
IPC分类号： H01L21/00
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.
摘要翻译： 为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2） 。 然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5） 层（3）。 此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22） 其基本上不含有碱金属。
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公开(公告)号：US20130074925A1
公开(公告)日：2013-03-28
申请号：US13702912
申请日：2011-06-10
申请人： Hideki Hakuma , Hiroki Sugimoto , Yoshiaki Tanaka
发明人： Hideki Hakuma , Hiroki Sugimoto , Yoshiaki Tanaka
IPC分类号： H01L31/0224
CPC分类号： H01L31/022433 , H01L31/022425 , H01L31/0322 , H01L31/03923 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (1), a backside surface electrode layer (2) formed on the substrate (1), a p-type light-absorbing layer (3) formed on the backside surface electrode layer (2), and an n-type transparent conductive film (5) formed on the p-type light-absorbing layer (3). Voids (6) are formed at the interface of the backside surface electrode layer (2) and the p-type light-absorbing layer (3).
摘要翻译： 公开了一种具有高光电转换效率的薄膜太阳能电池，并且设置有基板（1），形成在基板（1）上的背面电极层（2），p型光吸收层 形成在背面电极层（2）上的n型透明导电膜（5）和形成在p型光吸收层（3）上的n型透明导电膜。 在背面电极层（2）和p型光吸收层（3）的界面形成空隙（6）。
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公开(公告)号：US20110011451A1
公开(公告)日：2011-01-20
申请号：US12921222
申请日：2008-03-07
IPC分类号： H01L31/0264
CPC分类号： H01L31/03923 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.
摘要翻译： 在通过依次堆叠光吸收层，高电阻缓冲层和窗口层而获得的CIS基薄膜太阳能电池的集成结构中，与光吸收层相邻的第一缓冲层由含有 镉（Cd），锌（Zn）或铟（In），与第一缓冲层相邻的第二缓冲层由氧化锌基薄膜制成，形成第三缓冲层以覆盖通过成形暴露的端面 光吸收层，第一缓冲层，第二缓冲层和第二缓冲层的顶端面的布线图案，第三缓冲层由氧化锌系薄膜构成。
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6.发明申请公开(公告)号：US20110018089A1
公开(公告)日：2011-01-27
申请号：US12920772
申请日：2008-03-07
IPC分类号： H01L31/0352
CPC分类号： H01L31/0749 , H01L31/046 , Y02E10/541
摘要： In a stack structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order, the buffer layer has a stack structure of two or more layers including first and second buffer layers, the first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), the second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, the first buffer layer has a thickness equal to or smaller than 20 nm, and the second buffer layer has a thickness equal to or larger than 100 nm
摘要翻译： 在通过依次堆叠p型CIS光吸收层，缓冲层和n型透明导电膜获得的CIS基薄膜太阳能电池的堆叠结构中，缓冲层具有两个或 更多层包括第一和第二缓冲层，邻接p型光吸收层的第一缓冲层由含有镉（Cd），锌（Zn）或铟（In）的化合物制成，第二缓冲层与第一缓冲层 缓冲层由氧化锌系薄膜构成，第一缓冲层的厚度为20nm以下，第二缓冲层的厚度为100nm以上
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公开(公告)号：US09166077B2
公开(公告)日：2015-10-20
申请号：US13702912
申请日：2011-06-10
申请人： Hideki Hakuma , Hiroki Sugimoto , Yoshiaki Tanaka
发明人： Hideki Hakuma , Hiroki Sugimoto , Yoshiaki Tanaka
IPC分类号： H01L31/0224 , H01L31/032 , H01L31/0392 , H01L31/056
CPC分类号： H01L31/022433 , H01L31/022425 , H01L31/0322 , H01L31/03923 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (1), a backside surface electrode layer (2) formed on the substrate (1), a p-type light-absorbing layer (3) formed on the backside surface electrode layer (2), and an n-type transparent conductive film (5) formed on the p-type light-absorbing layer (3). Voids (6) are formed at the interface of the backside surface electrode layer (2) and the p-type light-absorbing layer (3).
摘要翻译： 公开了一种具有高光电转换效率的薄膜太阳能电池，并且设置有基板（1），形成在基板（1）上的背面电极层（2），p型光吸收层 形成在背面电极层（2）上的n型透明导电膜（5）和形成在p型光吸收层（3）上的n型透明导电膜。 在背面电极层（2）和p型光吸收层（3）的界面形成空隙（6）。
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公开(公告)号：US08575478B2
公开(公告)日：2013-11-05
申请号：US12921222
申请日：2008-03-07
CPC分类号： H01L31/03923 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.
摘要翻译： 在通过依次堆叠光吸收层，高电阻缓冲层和窗口层而获得的CIS基薄膜太阳能电池的集成结构中，与光吸收层相邻的第一缓冲层由含有 镉（Cd），锌（Zn）或铟（In），与第一缓冲层相邻的第二缓冲层由氧化锌基薄膜制成，形成第三缓冲层以覆盖通过成形暴露的端面 光吸收层，第一缓冲层，第二缓冲层和第二缓冲层的顶端面的布线图案，第三缓冲层由氧化锌系薄膜构成。
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公开(公告)号：US08501519B2
公开(公告)日：2013-08-06
申请号：US13515721
申请日：2010-12-14
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.
摘要翻译： 一种CIS系薄膜太阳能电池的制造方法，其特征在于，在高应变点玻璃基板上形成碱性控制层，在碱性控制层上形成背面电极层，形成CIS系的光吸收层 在所述CIS基光吸收层上形成n型透明导电膜，其中所述碱性控制层形成为允许所述高应变中包含的碱金属的热扩散的厚度 此外，除了从高应变点玻璃基板的热扩散以外，CIS系的光吸收层还具有从外部添加的碱金属。
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公开(公告)号：US20120258562A1
公开(公告)日：2012-10-11
申请号：US13515721
申请日：2010-12-14
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.
摘要翻译： 一种CIS系薄膜太阳能电池的制造方法，其特征在于，在高应变点玻璃基板上形成碱性控制层，在碱性控制层上形成背面电极层，形成CIS系的光吸收层 在所述CIS基光吸收层上形成n型透明导电膜，其中所述碱性控制层形成为允许所述高应变中包含的碱金属的热扩散的厚度 此外，除了从高应变点玻璃基板的热扩散以外，CIS系的光吸收层还具有从外部添加的碱金属。
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