公开(公告)号：US20100240223A1

公开(公告)日：2010-09-23

申请号：US12729926

申请日：2010-03-23

申请人： Hideki ITO ,  Naohisa Ikeya

发明人： Hideki ITO ,  Naohisa Ikeya

IPC分类号： H01L21/18

CPC分类号： H01L21/67109

摘要： A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.

摘要翻译： 一种制造半导体器件的方法，包括：将要成膜的晶片加载到腔室; 支撑晶片与晶片的成膜位置间隔开; 在晶片的状态下以预定的转速旋转用于在成膜期间通过支撑构件旋转晶片的旋转构件与晶片形成位置间隔开的同时预先加热晶片; 将晶片放置在成膜位置的支撑构件上; 并在预定温度下加热晶片，并在转动晶片的同时将工艺气体供应到晶片上。

公开(公告)号：US20090311430A1

公开(公告)日：2009-12-17

申请号：US12484459

申请日：2009-06-15

申请人： Hideki ITO

发明人： Hideki ITO

IPC分类号： B05D3/00 ,  B05C13/02 ,  B05C11/00

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46

摘要： According to a coating method of the present invention, a second member 107 associated with the type of a silicon wafer 101 to be coated is selected, transferred into a coating chamber 102, and placed on a first member 103 thereby forming a susceptor 110. The associated second member 107 is most suitable for providing a uniform temperature distribution across the surface of the silicon wafer 110 and has a nonuniform thickness designed to correct the uniformity of the temperature distribution across the wafer. This arrangement allows minimization of the temperature variation across the surface of different types of silicon wafers 101 when a film is formed on them. The storage chamber 130 preferably includes heating means 131 for heating the second member.

摘要翻译： 根据本发明的涂布方法，选择与待涂布的硅晶片101的类型相关联的第二构件107，转移到涂覆室102中，并放置在第一构件103上，从而形成基座110. 相关联的第二构件107最适合于在硅晶片110的表面上提供均匀的温度分布，并且具有设计成校正晶片上的温度分布的均匀性的不均匀厚度。 当在其上形成膜时，这种布置允许在不同类型的硅晶片101的表面上的温度变化最小化。 存储室130优选地包括用于加热第二构件的加热装置131。

公开(公告)号：US20120113343A1

公开(公告)日：2012-05-10

申请号：US13286675

申请日：2011-11-01

申请人： Takayuki KONNO ,  Shinichi NISHIDA ,  Hideki ITO ,  Takayuki ISHINO ,  Tsutomu KADOTANI

发明人： Takayuki KONNO ,  Shinichi NISHIDA ,  Hideki ITO ,  Takayuki ISHINO ,  Tsutomu KADOTANI

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2201/40

摘要： To provide an active-matrix type liquid crystal display device having a structure in which alignment of flattening films formed in the display region is uniform and fine, which can secure a large storage capacitance with a small area and achieve a high numerical aperture. A recessed region having no flattening film is formed in a part on a source electrode. In the recessed region, a common electrode made with a transparent conductive film covers a source electrode to form a second storage capacitor.

摘要翻译： 为了提供具有这样的结构的有源矩阵型液晶显示装置，其中形成在显示区域中的平坦化薄膜的取向是均匀和细微的，这可以确保较小的面积的大容量电容并实现高的数值孔径。 在源电极的一部分上形成没有平坦化膜的凹陷区域。 在凹陷区域中，由透明导电膜制成的公共电极覆盖源电极以形成第二存储电容器。

公开(公告)号：US20090126697A1

公开(公告)日：2009-05-21

申请号：US12237652

申请日：2008-09-25

申请人： Yasunori TAKAKU ,  Kimiya NAKATA ,  Yoji TSUZUKI ,  Hideki ITO

发明人： Yasunori TAKAKU ,  Kimiya NAKATA ,  Yoji TSUZUKI ,  Hideki ITO

IPC分类号： F02M37/04

CPC分类号： F02M37/0029 ,  F02M37/0052 ,  F02M37/10

摘要： A fuel-feeding system may preferably include a fuel tank containing liquid fuel; a fuel pump capable of pumping the liquid fuel contained in the fuel tank; a fuel injection valve capable of injecting the liquid fuel pumped by the fuel pump; and a three-way valve having a first port, a second port and a third port. The three-way valve is constructed so as to be switched between a first condition in which the first, second and third ports communicate with each other and a second condition in which only the first and third ports communicate with each other. The fuel injection valve is connected to the third external conduit at a position between the third port and the second relief valve, so that a pressure of the liquid fuel fed to the fuel injection valve can be switched between the first setting pressure and the second setting pressure when the three-way valve is switched between the first condition and the second condition.

摘要翻译： 燃料供给系统可以优选地包括容纳液体燃料的燃料箱; 能够抽吸容纳在燃料箱中的液体燃料的燃料泵; 燃料喷射阀，其能够喷射由燃料泵泵送的液体燃料; 以及具有第一端口，第二端口和第三端口的三通阀。 三通阀构造成在第一，第二和第三端口彼此连通的第一状态和仅第一和第三端口彼此连通的第二状态之间切换。 燃料喷射阀在第三端口和第二安全阀之间的位置处连接到第三外部导管，从而可以在第一设定压力和第二设定值之间切换供给到燃料喷射阀的液体燃料的压力 当三通阀在第一状态和第二状态之间切换时的压力。

公开(公告)号：US20080308036A1

公开(公告)日：2008-12-18

申请号：US12137843

申请日：2008-06-12

申请人： Hideki ITO ,  Hironobu Hirata ,  Shinichi Mitani

发明人： Hideki ITO ,  Hironobu Hirata ,  Shinichi Mitani

IPC分类号： C30B35/00 ,  C30B23/02

CPC分类号： C30B35/00 ,  C23C16/45504 ,  C23C16/45565 ,  C30B25/10

摘要： There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

摘要翻译： 提供了一种气相生长装置，其在外延生长步骤之后缩短晶片衬底的温度降低时间，以使得容易实现外延层的成膜中的高通量。 气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器底部的排出口，半导体晶片 放置在面对气体分配板。 气体分配板和环形保持器之间的分隔距离被设定为使得从气体供给口向下流动通过气体分配板向下流动以降低温度的冷却气体在半导体晶片的表面上处于层流状态，或 环形支架的表面。

公开(公告)号：US20120133853A1

公开(公告)日：2012-05-31

申请号：US13288052

申请日：2011-11-03

申请人： Hideki ITO ,  Shinichi NISHIDA ,  Takahiko WATANABE ,  Atsushi YAMAMOTO

发明人： Hideki ITO ,  Shinichi NISHIDA ,  Takahiko WATANABE ,  Atsushi YAMAMOTO

IPC分类号： G02F1/1339 ,  G02F1/1343

CPC分类号： G02F1/13394 ,  G02F1/136213

摘要： To provide a structure of an electrically stable step film of a columnar spacer, which can be formed in a region of a storage capacitor without increasing the number of steps. A liquid crystal display device of the present invention further includes, in all the pixels, step films of a same area formed with a semiconductor layer within a storage capacitor forming part. The pixels includes a kind in which the columnar spacer is provided at a position abutting against a step film forming part and a kind in which the columnar spacer is provided at a position away from the step film forming part.

摘要翻译： 提供可以在不增加步数的情况下形成在存储电容器的区域中的柱状间隔物的电稳定的步进膜的结构。 本发明的液晶显示装置在所有像素中还包括在存储电容器形成部分内形成有半导体层的相同区域的步进膜。 像素包括一种类型，其中柱状间隔物设置在与台阶膜形成部分抵接的位置处，并且其中柱状间隔物设置在远离阶梯膜形成部分的位置。

公开(公告)号：US20080032036A1

公开(公告)日：2008-02-07

申请号：US11828771

申请日：2007-07-26

申请人： Hideki ITO ,  Shinichi Mitani ,  Hironobu Hirata

发明人： Hideki ITO ,  Shinichi Mitani ,  Hironobu Hirata

IPC分类号： C23C16/00 ,  B05C11/00 ,  C23C16/52

CPC分类号： C23C16/46 ,  C23C16/52 ,  C30B25/105 ,  C30B25/16 ,  H01L21/67115

摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.

摘要翻译： 一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体 晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

公开(公告)号：US20090028542A1

公开(公告)日：2009-01-29

申请号：US12237426

申请日：2008-09-25

申请人： Hideichi NAKAMOTO ,  Junko HIROKAWA ,  Takashi ICHIKAWA ,  Hideki ITO ,  Hideki OGAWA ,  Nobutaka KIKUIRI

发明人： Hideichi NAKAMOTO ,  Junko HIROKAWA ,  Takashi ICHIKAWA ,  Hideki ITO ,  Hideki OGAWA ,  Nobutaka KIKUIRI

IPC分类号： G03B17/02 ,  G03B17/00

CPC分类号： H04N5/2259

摘要： An outer body of ball shell type has an opening. A camera is located in the outer body and receives an image from outside of the outer body through the opening. A camera support unit is located in the outer body and rotationally supports the camera along a first axis and a second axis mutually crossed at a center of the outer body. A first camera actuator is located in the outer body and rotationally actuates the camera around the first axis. A second camera actuator is located in the outer body and rotationally actuates the camera around the second axis.

摘要翻译： 球壳型的外壳具有开口。 相机位于外体中并通过开口从外体的外部接收图像。 相机支撑单元位于外部主体中并且沿着第一轴线和在外部主体的中心处相互交叉的第二轴线旋转地支撑照相机。 第一相机致动器位于外主体中并围绕第一轴旋转地驱动相机。 第二个相机致动器位于外部主体中并围绕第二轴旋转地驱动相机。

公开(公告)号：US20080236477A1

公开(公告)日：2008-10-02

申请号：US12053657

申请日：2008-03-24

申请人： Hideki ITO ,  Shinichi MITANI

发明人： Hideki ITO ,  Shinichi MITANI

IPC分类号： C30B25/16 ,  C30B35/00

CPC分类号： C30B25/10 ,  C23C16/4586 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.

摘要翻译： 提供了一种提高膜形成均匀性的气相生长装置和气相生长方法。 气相生长装置包括：室，具有基座的可旋转保持器，内部加热器和外部加热器，其布置在保持器中并从底表面加热晶片;气体管，其布置成面对内部加热器 并喷射冷却气体，以及温度测量单元，其布置在室外并测量晶片的表面温度。 以这种方式，可以识别在晶片上产生的过热部分的单个温度点的位置。 温度的单个点被局部冷却，从而可以提高晶片的平面内的温度分布的均匀性。

公开(公告)号：US20080311294A1

公开(公告)日：2008-12-18

申请号：US12139172

申请日：2008-06-13

申请人： Hideki ITO ,  Hironobu HIRATA ,  Shinichi MITANI

发明人： Hideki ITO ,  Hironobu HIRATA ,  Shinichi MITANI

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/45504 ,  C23C16/4401 ,  C30B25/14

摘要： There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

摘要翻译： 提供了一种气相生长装置，其减少了外延生长中的颗粒产生和附着材料，从而容易提高生产率。 气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器的底部的排出口，头部，并且覆盖侧 反应器的壁，其上放置半导体晶片的环形保持器。 气体分配板和环形保持器之间的间隔距离被设定为使得从气体供给口向下流过气体分配板的成膜气体在半导体晶片的表面上处于层流状态， 环形支架。