摘要:
The present invention has its object to provide a curable composition giving cured products improved in residual tack (reduced in stickiness), with the physical properties insuring those tensile characteristics and rubber elasticity required of sealing compositions for general architectural use being retained. The present invention provides a curable composition which comprises (I) 100 parts by weight of a reactive silicon group-containing polyether oligomer with the percentage of the number of reactive silicon groups to the number of molecular chain terminals as determined by 1H-NMR analysis being not less than 85% and (II) 1 to 500 parts by weight of a plasticizer.
摘要:
The present invention provides a novel sealant and a novel curable resin composition providing for sufficiently high mechanical strength, adhesive strength, rubber elasticity and good workability and a direct glazing method utilizing the composition, which comprises (I) a reactive silicon group-containing polyether oligomer such that the reactive silicon group exists exclusively at the molecular chain terminus and the introduction rate of the reactive silicon group into the molecular chain terminus is not less than 85% as determined by 1H-NMR analysis and (II) a reinforcing filler.
摘要:
A process for producing a reactive silicon group-containing polyether oligomer, which comprises reacting (a) a polyether oligomer the backbone chain of which comprises a polyether and which contains in a side chain or at a terminus of its molecule at least one unsaturated group of the following general formula (1): H2C═C(R1)—R2—O— (1) (wherein R1 represents a hydrocarbon group of not more than 10 carbon atoms; R2 represents a divalent organic group of 1 to 20 carbon atoms which contains in a side chain or at a terminus of its molecule at least one atomic species selected from the group consisting of hydrogen, oxygen and nitrogen as its constituent atom or atoms) or the general formula (2): HC(R1)═CH—R2—O— (2) (wherein R1 represents a hydrocarbon group of not more than 10 carbon atoms; R2 represents a divalent organic group of 1 to 20 carbon atoms which contains at least one atomic species selected from the group consisting of hydrogen, oxygen and nitrogen as its constituent atom or atoms), with (b) a reactive silicon group-containing compound, (c) in the presence of a Group VIII transition metal catalyst to thereby introduce the reactive silicon group into said oligomer (a).
摘要:
The invention provides a method of producing a reactive silicon group-containing polyether oligomer which comprises reacting (a) a polyether oligomer having main chain of a polyether and, in each molecule, at least one unsaturated group represented by the general formula (1): H2C═C(R1)—R2—O— (1) (in the formula, R1 is a hydrocarbon group containing not more than 10 carbon atoms and R2 is a divalent organic group containing 1 to 20 carbon atoms and one or more species selected from the group consisting of hydrogen, oxygen and nitrogen atoms as a constituent atom) or the general formula (2): HC(R1)═CH—R2—O— (2) on a side chain or at a terminus with (b) a reactive silicon group-containing compound in the presence of (c) a group VIII transition metal catalyst to introduce the reactive silicon group into said polyether oligomer (a), wherein the reaction is carried out in the presence of (d) a sulfur compound.
摘要:
The present invention has its object to provide a curable composition having good storage stability even when it contains a hydrolyzable silicon compound and/or an amino group-containing alkoxysilane or amino-substituted alkoxysilane derivative compound. This invention provides a curable composition which comprises (A) a reactive silicon group-containing polyether oligomer and at least one species selected from the following (B) and (C): (B) a hydrolyzable silicon compound having a hydrolyzable group bound to a silicon atom, said hydrolyzable group being more reactive with H2O than the silicon group in the above reactive silicon group-containing polyether oligomer and (C) an amino group-containing alkoxysilane or amino-substituted alkoxysilane derivative compound,
摘要:
The present invention has its object to provide a curable composition showing a controlled initial curing rate and, hence, offering good workability by introducing a methyl group into the neighborhood of the reactive silicon group within an oligomer to indirectly lower the reactivity of the reactive silicon group within the oligomer. The present invention is concerned with a curable composition comprising (A) a reactive silicon group-containing polyether oligomer and (B) a silanol condensation catalyst, said (A) reactive silicon group-containing polyether oligomer having a partial structure of the following general formula (1) per molecule: —O—R1—CH(CH3)—CH2—(Si(R22−b)(Xb)O)mSi(R33−a)Xa (1)
摘要:
The invention can provide a stereoscopic image display device, which achieves advantages of both a “glasses” device and a “naked-eye” device, while having a small size. When a right-eye image is displayed, a light blocking region forms on the left side of the center line, and when a left-eye image is displayed, a light blocking region forms on the right side of the center line. When the viewer is located in the regions, the right eye views the right-eye image, and the left eye views the left-eye image. Thus, even when the viewer faces stereoscopic display device with naked eyes, the viewer can view the stereoscopic image as long as the eyes of the viewer are located in the light blocking regions. The right and left images are mixed in the region other than the light blocking regions. However, multiple viewers can view the stereoscopic image when wearing the glasses.
摘要:
Uniformize afterimages caused by black insertion to each image when two types of images are alternately displayed. There are provided a left and right image alternate output unit, a mask pattern storage unit, a mask pattern selection counter, and a mask synthesizing unit. The left and right image alternate output unit alternately outputs two types of video frames. The mask pattern storage unit stores m mask patterns, wherein basic regions are defined in a pixel region of a liquid crystal panel, the pixel region has m pixels arrayed in a matrix, m is an even number equal to or greater than 4, the in mask patterns have different arrangements of mask pixels in the basic region, and the number of the mask pixels is an even number smaller than m and equal to or greater than 2.
摘要:
A manufacturing method of a piezoelectric element includes: forming a first conductive layer upon a substrate; forming a piezoelectric layer upon the first conductive layer; forming a second conductive layer upon the piezoelectric layer; forming a third conductive layer upon the second conductive layer; forming a first portion, a second portion, and an opening portion provided between the first portion and the second portion by patterning the third conductive layer; forming a resist layer that covers the opening portion and covers the edges of the first portion and the second portion that face the opening portion side; and forming a first conductive portion and a second conductive portion configured from the first portion and the second portion, and forming a third conductive portion configured from the second conductive layer, by dry-etching the second conductive layer using the first portion, the second portion, and the resist layer as a mask.
摘要:
A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.