摘要:
An electrophotographic photoconductor includes a base, a photosensitive layer formed on the base, and an overcoat layer formed on the photosensitive layer, wherein the overcoat layer includes gallium, oxygen, and hydrogen, and the intensity ratio (IO-H/IGa-O) of a signal IO-H of an O—H bond to a signal IGa-O of a Ga—O bond in an infrared absorption spectrum is about 0.1 or more and 0.5 or less.
摘要:
An electrophotographic photoconductor includes a base, a photosensitive layer formed on the base, and an overcoat layer formed on the photosensitive layer, wherein the overcoat layer includes gallium, oxygen, and hydrogen, and the intensity ratio (IO-H/IGa-O) of a signal IO-H of an O—H bond to a signal IGa-O of a Ga—O bond in an infrared absorption spectrum is about 0.1 or more and 0.5 or less.
摘要:
An electrophotographic photoreceptor includes an electrically conductive substrate, an organic photosensitive layer and a surface layer laminated in this order. The surface layer includes at least gallium (Ga) and oxygen (O) as constituent elements thereof, and has a thickness of 0.2 μm to 1.5 μm, and a microhardness of 2 GPa to 15 GPa.
摘要:
A nitride semiconductor device of high quality and excellent crystallinity and the method of manufacturing the same, wherein a nitride series compound semiconductor having at least an element belonging to the group IIIA and nitrogen is grown directly on a substrate, X-ray diffraction peaks of the nitride series compound semiconductor consist only of the peaks from the C-face of the hexagonal system, and the half width of an X-ray rocking curve at (0002) peak in the C-surface is 0.2 degrees of less, and wherein the method includes a step of introducing an organic metal compound at least containing a group IIIA element and a plasma activated nitrogen source into a reaction vessel to grow a nitride series compound semiconductor on the surface of a substrate, in which the ratio for the amount of the group IIIA element and nitrogen atom supplied (ratio for the number of atoms) is group IIIA element: nitrogen atom=1:50,000 to 1:1,000,000.
摘要:
An electrophotographic photoreceptor includes an electrically conductive substrate, an organic photosensitive layer and a surface layer laminated in this order. The surface layer includes at least gallium (Ga) and oxygen (O) as constituent elements thereof, and has a thickness of 0.2 μm to 1.5 μm, and a microhardness of 2 GPa to 15 GPa.
摘要:
An electrophotographic photoreceptor includes a conductive substrate, and a photosensitive layer, an intermediate layer having a thickness of 2 nm to 70 nm, and a surface layer, which are disposed in this order on the conductive substrate. The refractive index n1 of the photosensitive layer, the refractive index n2 of the intermediate layer, and the refractive index n3 of the surface layer satisfy an inequality, n2>n3>n1.
摘要:
The present invention provides an electrophotographic photoreceptor having at least a photosensitive layer and a surface layer provided at a surface of the photosensitive layer. The surface layer contains a first layer which is provided at the photosensitive layer side and has a refractive index of n1 and a second layer which is provided at the opposite side of the first layer to the photosensitive layer and has a refractive index of n2. The refractive index of the photosensitive layer, the refractive index of the first layer, the refractive index of the second layer, the film thickness of the first layer, an integer of 0 or more, and the wavelength of light with which the surface of the photoreceptor is irradiated when an electrostatic latent image is formed satisfy specific relationships.
摘要:
Disclosed is an electrophotographic photoreceptor including: an electroconductive substrate; a photosensitive layer arranged on or above the electroconductive substrate; and a surface layer arranged on or above the photosensitive layer, and containing about 90% or more by atom of gallium (Ga), oxygen (O) and hydrogen (H), and having an atomic number density of about 7.8×1022 cm−3 or more.
摘要:
An electrophotographic photoreceptor includes an organic photosensitive layer and one or more inorganic thin film layers disposed in this order on a conductive substrate, in which among the one or more inorganic thin film layers at least an inorganic protective layer disposed directly on the organic photosensitive layer has cracks scattered at intervals from about 1 μm to about 10 mm. The inorganic thin film layer having the cracks is a first protective layer and an inorganic thin film is grown on a surface of the first protective layer to form a second protective layer.
摘要:
An oxide material including gallium, zinc and oxygen, a ratio of the number of atoms of zinc to the number of atoms of gallium (number of atoms of zinc/number of atoms of gallium) being from about 0.01 to about 0.6 and a ratio of the number of atoms of oxygen to the sum of the number of atoms of gallium and the number of atoms of zinc (number of atoms of oxygen/(number of atoms of gallium+number of atoms of zinc)) being from about 1.0 to about 1.6, is disclosed. An electrophotographic photoreceptor including a layer which includes the oxide material is also disclosed. An electrophotographic photoreceptor including a substrate; and a photosensitive layer including gallium, oxygen and zinc is also disclosed.