摘要:
An electrophotographic photoconductor includes a base, a photosensitive layer formed on the base, and an overcoat layer formed on the photosensitive layer, wherein the overcoat layer includes gallium, oxygen, and hydrogen, and the intensity ratio (IO-H/IGa-O) of a signal IO-H of an O—H bond to a signal IGa-O of a Ga—O bond in an infrared absorption spectrum is about 0.1 or more and 0.5 or less.
摘要:
An electrophotographic photoconductor includes a base, a photosensitive layer formed on the base, and an overcoat layer formed on the photosensitive layer, wherein the overcoat layer includes gallium, oxygen, and hydrogen, and the intensity ratio (IO-H/IGa-O) of a signal IO-H of an O—H bond to a signal IGa-O of a Ga—O bond in an infrared absorption spectrum is about 0.1 or more and 0.5 or less.
摘要:
An electrophotographic photoreceptor includes an electrically conductive substrate, an organic photosensitive layer and a surface layer laminated in this order. The surface layer includes at least gallium (Ga) and oxygen (O) as constituent elements thereof, and has a thickness of 0.2 μm to 1.5 μm, and a microhardness of 2 GPa to 15 GPa.
摘要:
A nitride semiconductor device of high quality and excellent crystallinity and the method of manufacturing the same, wherein a nitride series compound semiconductor having at least an element belonging to the group IIIA and nitrogen is grown directly on a substrate, X-ray diffraction peaks of the nitride series compound semiconductor consist only of the peaks from the C-face of the hexagonal system, and the half width of an X-ray rocking curve at (0002) peak in the C-surface is 0.2 degrees of less, and wherein the method includes a step of introducing an organic metal compound at least containing a group IIIA element and a plasma activated nitrogen source into a reaction vessel to grow a nitride series compound semiconductor on the surface of a substrate, in which the ratio for the amount of the group IIIA element and nitrogen atom supplied (ratio for the number of atoms) is group IIIA element: nitrogen atom=1:50,000 to 1:1,000,000.
摘要:
The present invention provides an electrophotographic photoreceptor having at least a photosensitive layer and a surface layer provided at a surface of the photosensitive layer. The surface layer contains a first layer which is provided at the photosensitive layer side and has a refractive index of n1 and a second layer which is provided at the opposite side of the first layer to the photosensitive layer and has a refractive index of n2. The refractive index of the photosensitive layer, the refractive index of the first layer, the refractive index of the second layer, the film thickness of the first layer, an integer of 0 or more, and the wavelength of light with which the surface of the photoreceptor is irradiated when an electrostatic latent image is formed satisfy specific relationships.
摘要:
An electrophotographic photoreceptor includes an electrically conductive substrate, an organic photosensitive layer and a surface layer laminated in this order. The surface layer includes at least gallium (Ga) and oxygen (O) as constituent elements thereof, and has a thickness of 0.2 μm to 1.5 μm, and a microhardness of 2 GPa to 15 GPa.
摘要:
An electrophotographic photoreceptor includes a conductive substrate, and a photosensitive layer, an intermediate layer having a thickness of 2 nm to 70 nm, and a surface layer, which are disposed in this order on the conductive substrate. The refractive index n1 of the photosensitive layer, the refractive index n2 of the intermediate layer, and the refractive index n3 of the surface layer satisfy an inequality, n2>n3>n1.
摘要:
Disclosed is an electrophotographic photoreceptor including: an electroconductive substrate; a photosensitive layer arranged on or above the electroconductive substrate; and a surface layer arranged on or above the photosensitive layer, and containing about 90% or more by atom of gallium (Ga), oxygen (O) and hydrogen (H), and having an atomic number density of about 7.8×1022 cm−3 or more.
摘要:
It is to provide an essentially transparent solar cell of high efficiency that can be used by accumulating with a display device to generate electricity simultaneously with utilization of the display function, a self-power-supply display device comprising the same, and a process for producing the solar cell. The solar cell comprises at least a transparent conductive substrate having thereon a photoconductor layer that is transparent to a visible ray and has an absorbance of 0.8 or less at a wavelength of from 400 to 800 nm, and a transparent conductive electrode in this order. An embodiment, in which the photoconductor layer contains at least one element selected from Group IIIA elements and at least one element selected from Group VA elements in the Periodic Table, and an embodiment, in which the photoconductor layer contains a metallic oxide semiconductor, are preferred. Furthermore, an embodiment, in which the metallic oxide semiconductor is titanium oxide or zinc oxide, and an embodiment, in which the photoconductor layer has an optical gap of 2.8 eV or more, are preferred.
摘要:
Light from a subject is divided by an optical system, one of which is focused on a receiving surface of a first image sensing device. The first image sensing device generates pixel information having low pixel density and multi-value for the image of the subject. The other light is transmitted to outline extracting means to generate an outline image. The outline image is picked up by a second image sensing device to generate binary pixel information having high pixel density for the outline image. The pixel information of the image and the pixel information of the outline are transmitted to an image reproduction processor via a data processor compose an image of high pixel density.