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13 条记录 (耗时 0.023 秒)

    Solar cell, self-power-supply display device using same, and process for producing solar cell
    1.
    发明授权
    Solar cell, self-power-supply display device using same, and process for producing solar cell 失效
    太阳能电池，使用其的自供电显示装置以及太阳能电池的制造方法

    公开(公告)号：US06297442B1

    公开(公告)日：2001-10-02

    申请号：US09413805

    申请日：1999-10-07

    申请人： Shigeru Yagi ,  Seiji Suzuki ,  Nobuyuki Torigoe

    发明人： Shigeru Yagi ,  Seiji Suzuki ,  Nobuyuki Torigoe

    IPC分类号： H01L3104

    CPC分类号： H01L31/022466 ,  H01L31/022475 ,  H01L31/04 ,  Y02E10/50

    摘要： It is to provide an essentially transparent solar cell of high efficiency that can be used by accumulating with a display device to generate electricity simultaneously with utilization of the display function, a self-power-supply display device comprising the same, and a process for producing the solar cell. The solar cell comprises at least a transparent conductive substrate having thereon a photoconductor layer that is transparent to a visible ray and has an absorbance of 0.8 or less at a wavelength of from 400 to 800 nm, and a transparent conductive electrode in this order. An embodiment, in which the photoconductor layer contains at least one element selected from Group IIIA elements and at least one element selected from Group VA elements in the Periodic Table, and an embodiment, in which the photoconductor layer contains a metallic oxide semiconductor, are preferred. Furthermore, an embodiment, in which the metallic oxide semiconductor is titanium oxide or zinc oxide, and an embodiment, in which the photoconductor layer has an optical gap of 2.8 eV or more, are preferred.

    摘要翻译： 提供一种高效率的基本上透明的太阳能电池，其可以通过积累显示装置同时利用显示功能而使用，包括该显示功能的自供电显示装置和用于生成 太阳能电池。 该太阳能电池至少具有透明导电性基板，其上具有对可见光透明的感光体层，在波长400〜800nm下的吸光度为0.8以下，透明导电电极依次为透明导电性基板。 其中光电导体层含有选自IIIA族元素中的至少一种元素和选自元素周期表第VA族元素中的至少一种元素的实施方案，以及其中光电导体层含有金属氧化物半导体的实施方案是优选的 。 此外，金属氧化物半导体是氧化钛或氧化锌的实施方式以及其中光电导体层的光学间隙为2.8eV以上的实施方式是优选的。

    Nitride semiconductor device and method of manufacturing the same
    2.
    发明授权
    Nitride semiconductor device and method of manufacturing the same 失效
    氮化物半导体器件及其制造方法

    公开(公告)号：US06429465B1

    公开(公告)日：2002-08-06

    申请号：US09656442

    申请日：2000-09-06

    申请人： Shigeru Yagi ,  Toshihiko Suzuki ,  Nobuyuki Torigoe ,  Seiji Suzuki ,  Takeshi Iwanaga

    发明人： Shigeru Yagi ,  Toshihiko Suzuki ,  Nobuyuki Torigoe ,  Seiji Suzuki ,  Takeshi Iwanaga

    IPC分类号： H01L3300

    CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A nitride semiconductor device of high quality and excellent crystallinity and the method of manufacturing the same, wherein a nitride series compound semiconductor having at least an element belonging to the group IIIA and nitrogen is grown directly on a substrate, X-ray diffraction peaks of the nitride series compound semiconductor consist only of the peaks from the C-face of the hexagonal system, and the half width of an X-ray rocking curve at (0002) peak in the C-surface is 0.2 degrees of less, and wherein the method includes a step of introducing an organic metal compound at least containing a group IIIA element and a plasma activated nitrogen source into a reaction vessel to grow a nitride series compound semiconductor on the surface of a substrate, in which the ratio for the amount of the group IIIA element and nitrogen atom supplied (ratio for the number of atoms) is group IIIA element: nitrogen atom=1:50,000 to 1:1,000,000.

    摘要翻译： 具有高品质和优异结晶度的氮化物半导体器件及其制造方法，其中具有至少一种属于IIIA族的元素的氮化物系列化合物半导体和氮气直接在衬底上生长，其中X射线衍射峰 氮化物系化合物半导体仅由来自六方晶系的C面的峰组成，C面的（0002）峰的X射线摇摆曲线的半宽度为0.2度以下，其中， 包括将至少含有IIIA族元素和等离子体活性氮源的有机金属化合物引入反应容器中以在基板的表面上生长氮化物系化合物半导体的步骤，其中所述基团的量 提供的IIIA元素和氮原子（原子数的比例）为IIIA族元素：氮原子= 1:500〜1:1000000。

    Image recording apparatus and method as well as image reproducing apparatus and method
    5.
    发明授权
    Image recording apparatus and method as well as image reproducing apparatus and method 失效
    图像记录装置和方法以及图像再现装置和方法

    公开(公告)号：US06268884B1

    公开(公告)日：2001-07-31

    申请号：US08889128

    申请日：1997-07-07

    申请人： Shigeru Yagi ,  Nobuyuki Torigoe

    发明人： Shigeru Yagi ,  Nobuyuki Torigoe

    IPC分类号： H04N5208

    CPC分类号： H04N1/41 ,  H04N5/208

    摘要： Light from a subject is divided by an optical system, one of which is focused on a receiving surface of a first image sensing device. The first image sensing device generates pixel information having low pixel density and multi-value for the image of the subject. The other light is transmitted to outline extracting means to generate an outline image. The outline image is picked up by a second image sensing device to generate binary pixel information having high pixel density for the outline image. The pixel information of the image and the pixel information of the outline are transmitted to an image reproduction processor via a data processor compose an image of high pixel density.

    摘要翻译： 来自被摄体的光被光学系统划分，其中一个被聚焦在第一图像感测装置的接收表面上。 第一图像感测装置生成具有低像素密度和对于被摄体图像的多值的像素信息。 另外的光被传送到轮廓提取装置以产生轮廓图像。 轮廓图像由第二图像感测装置拾取，以生成轮廓图像具有高像素密度的二进制像素信息。 图像的像素信息和轮廓的像素信息经由数据处理器被发送到图像再现处理器，构成高像素密度的图像。

    Electrophotographic photoreceptor, and image forming apparatus and process cartridge using the same
    6.
    发明授权
    Electrophotographic photoreceptor, and image forming apparatus and process cartridge using the same 有权
    电子照相感光体和使用其的成像设备和处理盒

    公开(公告)号：US08574798B2

    公开(公告)日：2013-11-05

    申请号：US12534541

    申请日：2009-08-03

    申请人： Takeshi Iwanaga ,  Masayuki Nishikawa ,  Shigeru Yagi ,  Nobuyuki Torigoe

    发明人： Takeshi Iwanaga ,  Masayuki Nishikawa ,  Shigeru Yagi ,  Nobuyuki Torigoe

    IPC分类号： G03G5/04

    CPC分类号： G03G5/0436 ,  G03G5/0614 ,  G03G5/0696

    摘要： The present invention provides an electrophotographic photoreceptor having at least a photosensitive layer and a surface layer provided at a surface of the photosensitive layer. The surface layer contains a first layer which is provided at the photosensitive layer side and has a refractive index of n1 and a second layer which is provided at the opposite side of the first layer to the photosensitive layer and has a refractive index of n2. The refractive index of the photosensitive layer, the refractive index of the first layer, the refractive index of the second layer, the film thickness of the first layer, an integer of 0 or more, and the wavelength of light with which the surface of the photoreceptor is irradiated when an electrostatic latent image is formed satisfy specific relationships.

    摘要翻译： 本发明提供一种电子照相感光体，其至少具有感光层和设置在感光层表面的表面层。 表面层包含设置在感光层侧并具有n1的折射率的第一层和设置在第一层的相对于感光层并具有n2的折射率的第二层。 感光层的折射率，第一层的折射率，第二层的折射率，第一层的膜厚，0以上的整数，以及表面的光的波长 当形成静电潜像满足特定关系时，照射感光体。

    Apparatus and system for manufacturing a semiconductor
    7.
    发明申请
    Apparatus and system for manufacturing a semiconductor 审中-公开
    用于制造半导体的装置和系统

    公开(公告)号：US20050263071A1

    公开(公告)日：2005-12-01

    申请号：US11006578

    申请日：2004-12-08

    申请人： Shigeru Yagi ,  Nobuyuki Torigoe

    发明人： Shigeru Yagi ,  Nobuyuki Torigoe

    IPC分类号： C23C16/50 ,  C23C16/00 ,  C23C16/30 ,  C23C16/517 ,  H01L21/205

    CPC分类号： C23C16/517 ,  C23C16/303

    摘要： The present invention provides an apparatus for manufacturing a semiconductor including: a reactor; a substrate holder for supporting a substrate; a primary gas supply unit for supplying a primary gas to the reactor; a secondary gas supply unit for supplying a secondary gas to the reactor; a first plasma generator for activating the primary gas to produce an activated gas; and a second plasma generator for activating a gas flow which includes the activated gas, wherein the gas flow is blown substantially perpendicularly onto a surface of the substrate on which surface a film is to be formed, and the second plasma generator discharges toward the center of the gas flow. The present invention also provides a system for manufacturing a semiconductor including the apparatus described above and a unit for moving the substrate holder.

    摘要翻译： 本发明提供一种半导体制造装置，包括：反应器; 用于支撑衬底的衬底保持器; 用于向所述反应器供应初级气体的主要气体供应单元; 用于向所述反应器供给二次气体的二次气体供给单元; 第一等离子体发生器，用于激活一次气体以产生活性气体; 以及第二等离子体发生器，其用于激活包括所述活性气体的气流，其中所述气流基本上垂直地吹向所述基板的要在其上形成膜的表面的表面上，并且所述第二等离子体发生器朝向 气流。 本发明还提供一种用于制造包括上述装置的半导体的系统和用于移动衬底保持器的单元。

    Electrophotographic photoreceptor, and process cartridge and image forming apparatus using the same
    8.
    发明授权
    Electrophotographic photoreceptor, and process cartridge and image forming apparatus using the same 有权
    电子照相感光体，以及处理盒和使用其的成像设备

    公开(公告)号：US08404415B2

    公开(公告)日：2013-03-26

    申请号：US12543201

    申请日：2009-08-18

    申请人： Takeshi Iwanaga ,  Shigeru Yagi ,  Nobuyuki Torigoe

    发明人： Takeshi Iwanaga ,  Shigeru Yagi ,  Nobuyuki Torigoe

    IPC分类号： G03G5/147

    CPC分类号： G03G5/082 ,  G03G5/14704

    摘要： Disclosed is an electrophotographic photoreceptor including: an electroconductive substrate; a photosensitive layer arranged on or above the electroconductive substrate; and a surface layer arranged on or above the photosensitive layer, and containing about 90% or more by atom of gallium (Ga), oxygen (O) and hydrogen (H), and having an atomic number density of about 7.8×1022 cm−3 or more.

    摘要翻译： 公开了一种电子照相感光体，包括：导电性基材; 布置在导电基底上或上方的感光层; 以及设置在感光层上或上方的表面层，并且含有约90％以上的镓（Ga），氧（O）和氢（H）的原子数密度约为7.8×1022cm- 3以上。