公开(公告)号：US07777288B2

公开(公告)日：2010-08-17

申请号：US11052215

申请日：2005-02-08

申请人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L31/058

CPC分类号： H01C7/1013 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

摘要翻译： 在半导体集成电路器件的温度传感器部分中，形成多层布线结构的最上层布线层的布线。 在两条电线之间设置氧化钒的片状温度监视元件，以覆盖两条电线。 因此，温度监视元件通过两个通孔和最上面布线层的两条导线连接在多层布线结构的底层布线层的两条导线之间。

公开(公告)号：US20050161822A1

公开(公告)日：2005-07-28

申请号：US11038094

申请日：2005-01-21

申请人： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： G01K1/14 ,  G01K7/00 ,  G01K7/01 ,  H01L21/4763 ,  H01L21/822 ,  H01L23/00 ,  H01L23/34 ,  H01L23/48 ,  H01L23/522 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L37/00

CPC分类号： H01L23/34 ,  G01K7/015 ,  H01L23/522 ,  H01L27/0248 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

摘要翻译： 在半导体集成电路器件的温度传感器部分中，在多层布线层的最上层形成钨的第一通孔，并且在覆盖通孔的多层布线层的区域上设置钛焊盘。 以覆盖多层布线层和焊盘的方式设置绝缘层，第二通孔形成为到达焊盘。 通过反应性溅射将氧化钒埋在第二通孔中，并且以使得第二通孔彼此连接的方式提供氧化钒的温度监视部分。 因此，温度监视器部分连接在两条线之间。

公开(公告)号：US07239002B2

公开(公告)日：2007-07-03

申请号：US11038094

申请日：2005-01-21

申请人： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L23/58 ,  H01L27/06 ,  H01L23/48 ,  G01K1/14

CPC分类号： H01L23/34 ,  G01K7/015 ,  H01L23/522 ,  H01L27/0248 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

摘要翻译： 在半导体集成电路器件的温度传感器部分中，在多层布线层的最上层形成钨的第一通孔，并且在覆盖通孔的多层布线层的区域上设置钛焊盘。 以覆盖多层布线层和焊盘的方式设置绝缘层，第二通孔形成为到达焊盘。 通过反应性溅射将氧化钒埋在第二通孔中，并且以使得第二通孔彼此连接的方式提供氧化钒的温度监视部分。 因此，温度监视器部分连接在两条线之间。

公开(公告)号：US20050173775A1

公开(公告)日：2005-08-11

申请号：US11052215

申请日：2005-02-08

申请人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L21/768 ,  H01C7/10 ,  H01L21/822 ,  H01L23/58 ,  H01L27/04 ,  H01L27/06 ,  H01L27/16 ,  H01L31/058

CPC分类号： H01C7/1013 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

摘要翻译： 在半导体集成电路器件的温度传感器部分中，形成多层布线结构的最上层布线层的布线。 在两条电线之间设置氧化钒的片状温度监视元件，以覆盖两条电线。 因此，温度监视元件通过两个通孔和最上面布线层的两条导线连接在多层布线结构的底层布线层的两条导线之间。

公开(公告)号：US20050221573A1

公开(公告)日：2005-10-06

申请号：US11086743

申请日：2005-03-23

申请人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/04 ,  H01L37/00 ,  H01L47/00

CPC分类号： H01L21/02192 ,  H01L21/022 ,  H01L21/31604 ,  H01L23/5228 ,  H01L28/24 ,  H01L37/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.

摘要翻译： 在层间绝缘层上形成氧化钒膜，依次在氧化钒膜上形成氧化硅膜和氮化硅膜。 用抗蚀剂图案作为掩模，对氮化硅膜进行图案化。 然后，使用剥离溶液或氧等离子体灰化除去抗蚀剂图案。 接下来，利用图案化的氮化硅膜作为掩模，氧化硅膜和氧化钒膜被蚀刻以形成氧化钒的电阻膜。

公开(公告)号：US07462921B2

公开(公告)日：2008-12-09

申请号：US11086743

申请日：2005-03-23

申请人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L31/058 ,  H01L29/00 ,  H01L21/00

CPC分类号： H01L21/02192 ,  H01L21/022 ,  H01L21/31604 ,  H01L23/5228 ,  H01L28/24 ,  H01L37/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.

摘要翻译： 在层间绝缘层上形成氧化钒膜，依次在氧化钒膜上形成氧化硅膜和氮化硅膜。 用抗蚀剂图案作为掩模，对氮化硅膜进行图案化。 然后，使用剥离溶液或氧等离子体灰化除去抗蚀剂图案。 接下来，利用图案化的氮化硅膜作为掩模，氧化硅膜和氧化钒膜被蚀刻以形成氧化钒的电阻膜。

公开(公告)号：US07391092B2

公开(公告)日：2008-06-24

申请号：US11088995

申请日：2005-03-24

申请人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L31/058

CPC分类号： H01L23/34 ,  G01K7/16 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided below the temperature monitor member. A region equal to or greater than a half of the entire temperature monitor member overlies the thermal conducting layer in a plan view.

摘要翻译： 在半导体集成电路装置中，设置氧化钒片状温度监视部件，其一端与一个通路连接，而另一端与另一个通路连接。 在温度监视器构件的下方设置片状的铝导热层。 等于或大于整个温度监视器构件的一半的区域在俯视图中覆盖在导热层上。

公开(公告)号：US07741692B2

公开(公告)日：2010-06-22

申请号：US11087587

申请日：2005-03-24

申请人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L31/058

CPC分类号： H01L23/34 ,  G01K7/01 ,  G01K7/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.

摘要翻译： 在半导体集成电路器件中，逻辑电路部分设置在P型硅衬底和多层布线层的顶表面处。 该装置还设置有温度传感器部分，其中在多层布线层上方设置有氧化钒的第一温度监测部件。 Ti的第二温度监视器构件设置在多层布线层的最下层。 第一和第二温度监视器构件串联连接在地电位线和电源电位线之间，输出端连接到两个构件的节点。 第一温度监视部件的电阻率的温度系数为负，第二温度监视部件的温度系数为正。

公开(公告)号：US20050218471A1

公开(公告)日：2005-10-06

申请号：US11088995

申请日：2005-03-24

申请人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L23/52 ,  G01K7/16 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/34 ,  H01L23/522 ,  H01L23/58 ,  H01L27/00 ,  H01L27/04 ,  H01L31/058

CPC分类号： H01L23/34 ,  G01K7/16 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided below the temperature monitor member. A region equal to or greater than a half of the entire temperature monitor member overlies the thermal conducting layer in a plan view.

摘要翻译： 在半导体集成电路装置中，设置氧化钒片状温度监视部件，其一端与一个通路连接，而另一端与另一个通路连接。 在温度监视器构件的下方设置片状的铝导热层。 等于或大于整个温度监视器构件的一半的区域在俯视图中覆盖在导热层上。

公开(公告)号：US20050218470A1

公开(公告)日：2005-10-06

申请号：US11087587

申请日：2005-03-24

申请人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L21/3205 ,  G01K7/01 ,  G01K7/18 ,  G01K7/22 ,  G01K7/42 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L23/58 ,  H01L27/04 ,  H01L27/06 ,  H01L29/00 ,  H01L31/058 ,  H05B1/02

CPC分类号： H01L23/34 ,  G01K7/01 ,  G01K7/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.

摘要翻译： 在半导体集成电路器件中，逻辑电路部分设置在P型硅衬底和多层布线层的顶表面处。 该装置还设置有温度传感器部分，其中在多层布线层上方设置有氧化钒的第一温度监测部件。 Ti的第二温度监视器构件设置在多层布线层的最下层。 第一和第二温度监视器构件串联连接在地电位线和电源电位线之间，输出端连接到两个构件的节点。 第一温度监视部件的电阻率的温度系数为负，第二温度监视部件的温度系数为正。