Sintered silicon oxide for film vapor deposition, its production method, and method for producing silicon oxide vapor deposition film
    3.
    发明授权
    Sintered silicon oxide for film vapor deposition, its production method, and method for producing silicon oxide vapor deposition film 有权
    用于薄膜气相沉积的烧结氧化硅,其制造方法和氧化硅蒸镀膜的制造方法

    公开(公告)号:US08066806B2

    公开(公告)日:2011-11-29

    申请号:US13040838

    申请日:2011-03-04

    IPC分类号: C01B33/113 C23C16/40

    摘要: A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.

    摘要翻译: 提供密度为1.0〜2.0g / cm 3,三点弯曲强度为至少50g / mm 2,BET比表面积为0.1〜20m 2 / g的薄膜蒸镀烧结二氧化硅。 当该烧结氧化硅用于膜的蒸发源时,可以可靠地防止由有问题的溅射现象引起的针孔和其它缺陷,并且能够稳定地生产具有优异阻气性的可靠的封装材料。 本发明还提供了一种制造这种烧结氧化硅的方法,并且该方法可以大规模生产而不需要任何特殊技术,因此该方法能够以降低的成本为市场提供烧结氧化硅。

    SINTERED SILICON OXIDE FOR FILM VAPOR DEPOSITION, ITS PRODUCTION METHOD, AND METHOD FOR PRODUCING SILICON OXIDE VAPOR DEPOSITION FILM
    9.
    发明申请
    SINTERED SILICON OXIDE FOR FILM VAPOR DEPOSITION, ITS PRODUCTION METHOD, AND METHOD FOR PRODUCING SILICON OXIDE VAPOR DEPOSITION FILM 有权
    用于薄膜蒸发沉积的烧结硅氧烷,其生产方法和生产氧化硅蒸气沉积膜的方法

    公开(公告)号:US20090232721A1

    公开(公告)日:2009-09-17

    申请号:US12399590

    申请日:2009-03-06

    IPC分类号: C01B33/113 C23C16/40

    摘要: A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.

    摘要翻译: 提供密度为1.0〜2.0g / cm 3,三点弯曲强度为至少50g / mm 2,BET比表面积为0.1〜20m 2 / g的薄膜蒸镀烧结二氧化硅。 当该烧结氧化硅用于膜的蒸发源时,可以可靠地防止由有问题的溅射现象引起的针孔和其它缺陷,并且能够稳定地生产具有优异阻气性的可靠的封装材料。 本发明还提供了一种制造这种烧结氧化硅的方法,并且该方法可以大规模生产而不需要任何特殊技术,因此该方法能够以降低的成本为市场提供烧结氧化硅。