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    Sintered silicon oxide for film vapor deposition, its production method, and method for producing silicon oxide vapor deposition film
    1.
    发明授权
    Sintered silicon oxide for film vapor deposition, its production method, and method for producing silicon oxide vapor deposition film 有权
    用于薄膜气相沉积的烧结氧化硅，其制造方法和氧化硅蒸镀膜的制造方法

    公开(公告)号：US08066806B2

    公开(公告)日：2011-11-29

    申请号：US13040838

    申请日：2011-03-04

    申请人： Hirofumi Fukuoka ,  Meguru Kashida ,  Toshio Ohba

    发明人： Hirofumi Fukuoka ,  Meguru Kashida ,  Toshio Ohba

    IPC分类号： C01B33/113 ,  C23C16/40

    CPC分类号： C23C14/10 ,  C23C14/24 ,  Y10T428/31667

    摘要： A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.

    摘要翻译： 提供密度为1.0〜2.0g / cm 3，三点弯曲强度为至少50g / mm 2，BET比表面积为0.1〜20m 2 / g的薄膜蒸镀烧结二氧化硅。 当该烧结氧化硅用于膜的蒸发源时，可以可靠地防止由有问题的溅射现象引起的针孔和其它缺陷，并且能够稳定地生产具有优异阻气性的可靠的封装材料。 本发明还提供了一种制造这种烧结氧化硅的方法，并且该方法可以大规模生产而不需要任何特殊技术，因此该方法能够以降低的成本为市场提供烧结氧化硅。

    SINTERED SILICON OXIDE FOR FILM VAPOR DEPOSITION, ITS PRODUCTION METHOD, AND METHOD FOR PRODUCING SILICON OXIDE VAPOR DEPOSITION FILM
    4.
    发明申请
    SINTERED SILICON OXIDE FOR FILM VAPOR DEPOSITION, ITS PRODUCTION METHOD, AND METHOD FOR PRODUCING SILICON OXIDE VAPOR DEPOSITION FILM 有权
    用于薄膜蒸发沉积的烧结硅氧烷，其生产方法和生产氧化硅蒸气沉积膜的方法

    公开(公告)号：US20090232721A1

    公开(公告)日：2009-09-17

    申请号：US12399590

    申请日：2009-03-06

    申请人： Hirofumi FUKUOKA ,  Meguru Kashida ,  Toshio Ohba

    发明人： Hirofumi FUKUOKA ,  Meguru Kashida ,  Toshio Ohba

    IPC分类号： C01B33/113 ,  C23C16/40

    CPC分类号： C23C14/10 ,  C23C14/24 ,  Y10T428/31667

    摘要： A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.

    摘要翻译： 提供密度为1.0〜2.0g / cm 3，三点弯曲强度为至少50g / mm 2，BET比表面积为0.1〜20m 2 / g的薄膜蒸镀烧结二氧化硅。 当该烧结氧化硅用于膜的蒸发源时，可以可靠地防止由有问题的溅射现象引起的针孔和其它缺陷，并且能够稳定地生产具有优异阻气性的可靠的封装材料。 本发明还提供了一种制造这种烧结氧化硅的方法，并且该方法可以大规模生产而不需要任何特殊技术，因此该方法能够以降低的成本为市场提供烧结氧化硅。

    NEGATIVE ELECTRODE MATERIAL, MAKING METHOD, LITHIUM ION SECONDARY BATTERY, AND ELECTROCHEMICAL CAPACITOR
    5.
    发明申请
    NEGATIVE ELECTRODE MATERIAL, MAKING METHOD, LITHIUM ION SECONDARY BATTERY, AND ELECTROCHEMICAL CAPACITOR 审中-公开
    负极电极材料，制造方法，锂离子二次电池和电化学电容器

    公开(公告)号：US20090311606A1

    公开(公告)日：2009-12-17

    申请号：US12484898

    申请日：2009-06-15

    申请人： Hirofumi FUKUOKA ,  Koichiro Watanabe ,  Meguru Kashida ,  Satoru Miyawaki ,  Toshio Ohba

    发明人： Hirofumi FUKUOKA ,  Koichiro Watanabe ,  Meguru Kashida ,  Satoru Miyawaki ,  Toshio Ohba

    IPC分类号： H01M4/58 ,  H01G9/04

    CPC分类号： H01M4/134 ,  H01M4/48 ,  H01M10/0525

    摘要： A conductive powder is provided in which particles having silicon crystallites dispersed in a silicon compound are coated on their surface with carbon. The conductive powder develops a diffraction peak assigned to Si(111) around 2θ=28.4° on x-ray diffractometry (Cu—Kα) using copper as the counter cathode, the peak having a half width of at least 1.0°, and has a specific resistance of up to 50 mΩ. The powder is used as a negative electrode material to construct a non-aqueous electrolyte secondary battery, which has a high charge/discharge capacity and improved cycle performance.

    摘要翻译： 提供了一种导电粉末，其中具有分散在硅化合物中的硅微晶的颗粒在其表面上涂覆有碳。 使用铜作为对阴极，导电粉末在x射线衍射（Cu-Kalpha）上形成分配给Si（111）约2θ= 28.4°的衍射峰，该峰具有至少1.0°的半宽度，并且具有 比电阻高达50 mOmega。 该粉末用作负极材料，以构建具有高充电/放电容量和改进的循环性能的非水电解质二次电池。