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    Process for preparing organohalosilanes
    6.
    发明授权
    Process for preparing organohalosilanes 有权
    制备有机卤代硅烷的方法

    公开(公告)号：US06239304B1

    公开(公告)日：2001-05-29

    申请号：US09577384

    申请日：2000-05-23

    申请人： Mikio Aramata ,  Susumu Ueno ,  Akio Ohori ,  Hirofumi Fukuoka ,  Toshio Shinohara ,  Tetsuya Inukai

    发明人： Mikio Aramata ,  Susumu Ueno ,  Akio Ohori ,  Hirofumi Fukuoka ,  Toshio Shinohara ,  Tetsuya Inukai

    IPC分类号： C07F716

    CPC分类号： C07F7/16

    摘要： Organohalosilanes are prepared by the Rochow process of reacting metallic silicon particles with an organohalide in the presence of a copper catalyst. The metallic silicon particles, which are prepared by committing fragments of metallic silicon raw material, have a mean particle size of 10 &mgr;m to 10 mm and a surface oxygen quantity of at least 0.05 wt % and/or at least 0.001 g of oxygen/m2 of silicon surface area, which is given as the difference between the oxygen concentrations determined by in-metal oxygen analysis of the metallic silicon particles and the fragments, respectively. On analysis, the metallic silicon particles have been held for at least 3 hours in an air atmosphere at 25° C. and RH 55%

    摘要翻译： 有机卤代硅烷通过在铜催化剂存在下使金属硅颗粒与有机卤化物反应的Rochow方法制备。 通过制造金属硅原料的碎片而制备的金属硅颗粒的平均粒径为10〜10μm，表面氧量为0.05重量％以上，和/或至少为0.001克氧/ m 2 的硅表面积，其分别由金属硅颗粒和片段的金属间氧分析确定的氧浓度之差给出。 经分析，金属硅颗粒在空气气氛中在25℃下保持至少3小时，RH为55％

    Apparatus for the continuous production of silicon oxide powder
    9.
    发明授权
    Apparatus for the continuous production of silicon oxide powder 有权
    用于连续生产氧化硅粉末的设备

    公开(公告)号：US07431899B2

    公开(公告)日：2008-10-07

    申请号：US10784259

    申请日：2004-02-24

    申请人： Hirofumi Fukuoka ,  Susumu Ueno ,  Takeshi Fukuda

    发明人： Hirofumi Fukuoka ,  Susumu Ueno ,  Takeshi Fukuda

    IPC分类号： C01B33/20

    CPC分类号： H01M4/485 ,  C01B33/113 ,  C01P2006/12 ,  C09C1/0018 ,  H01M4/48 ,  H01M10/0525

    摘要： A silicon oxide powder can be continuously prepared by feeding a raw material powder mixture containing silicon dioxide powder into a reaction chamber (2) at a temperature of 1,100-1,600° C., to produce a silicon oxide gas, transferring the silicon oxide gas to a deposition chamber (11) through a transfer conduit (10) maintained at a temperature of from higher than 1,000° C. to 1,300° C., causing silicon oxide to deposit on a substrate (13) which is disposed and cooled in the deposition chamber, scraping the silicon oxide deposit, and recovering the deposit in a recovery chamber (18). The method and apparatus is capable of continuous and stable production of amorphous silicon oxide powder of high purity.

    摘要翻译： 可以通过在1100〜1600℃的温度下将含有二氧化硅粉末的原料粉末混合物进料到反应室（2）中来连续制备氧化硅粉末，以产生氧化硅气体，将氧化硅气体转移到 沉积室（11），其通过保持在高于1,000℃至1300℃的温度的转移管道（10），使得氧化硅沉积在沉积物中的基底（13）上，所述基底（13）在沉积物中被设置和冷却 刮擦氧化硅沉积物，并将沉积物回收到回收室（18）中。 该方法和装置能够连续且稳定地生产高纯度的无定形氧化硅粉末。

    Method for the continuous production of silicon oxide powder
    10.
    发明授权
    Method for the continuous production of silicon oxide powder 有权
    连续生产氧化硅粉末的方法

    公开(公告)号：US06821495B2

    公开(公告)日：2004-11-23

    申请号：US09773677

    申请日：2001-02-02

    申请人： Hirofumi Fukuoka ,  Susumu Ueno ,  Takeshi Fukuda

    发明人： Hirofumi Fukuoka ,  Susumu Ueno ,  Takeshi Fukuda

    IPC分类号： C01B3320

    CPC分类号： H01M4/485 ,  C01B33/113 ,  C01P2006/12 ,  C09C1/0018 ,  H01M4/48 ,  H01M10/0525

    摘要： A silicon oxide powder can be continuously prepared by feeding a raw material powder mixture containing silicon dioxide powder into a reaction chamber (2) at a temperature of 1,100-1,600° C., to produce a silicon oxide gas, transferring the silicon oxide gas to a deposition chamber (11) through a transfer conduit (10) maintained at a temperature of from higher than 1,000° C. to 1,300° C., causing silicon oxide to deposit on a substrate (13) which is disposed and cooled in the deposition chamber, scraping the silicon oxide deposit, and recovering the deposit in a recovery chamber (18). The method and apparatus is capable of continuous and stable production of amorphous silicon oxide powder of high purity.

    摘要翻译： 可以通过在1100〜1600℃的温度下将含有二氧化硅粉末的原料粉末混合物进料到反应室（2）中来连续制备氧化硅粉末，以产生氧化硅气体，将氧化硅气体转移到 沉积室（11），其通过保持在高于1,000℃至1300℃的温度的转移管道（10），使得氧化硅沉积在沉积物中的基底（13）上，所述基底（13）在沉积物中被设置和冷却 刮除氧化硅沉积物，并将沉积物回收到回收室（18）中。 该方法和装置能够连续且稳定地生产高纯度的无定形氧化硅粉末。