公开(公告)号：US07088401B1

公开(公告)日：2006-08-08

申请号：US09609169

申请日：2000-06-30

申请人： Hirofumi Ihara ,  Wakahiko Kaneko ,  Takayasu Iida

发明人： Hirofumi Ihara ,  Wakahiko Kaneko ,  Takayasu Iida

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1333 ,  H01L29/04

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/124

摘要： A liquid crystal display device includes first and second electrodes and an insulating film. The first electrode is formed on a substrate as one of two electrodes of an accumulation capacitor and applied with a voltage. The insulating film is formed on the first electrode to cover the first electrode. The second electrode is formed on the first electrode via the insulating film as the other electrode of the accumulation capacitor and including a first conductive film and a second conductive film formed on the first conductive film.

摘要翻译： 液晶显示装置包括第一和第二电极和绝缘膜。 第一电极形成在作为累积电容器的两个电极中的一个的衬底上并施加电压。 绝缘膜形成在第一电极上以覆盖第一电极。 第二电极通过作为积累电容器的另一个电极的绝缘膜形成在第一电极上，并且包括形成在第一导电膜上的第一导电膜和第二导电膜。

公开(公告)号：US5872021A

公开(公告)日：1999-02-16

申请号：US364221

申请日：1994-12-27

申请人： Seiichi Matsumoto ,  Osamu Sukegawa ,  Wakahiko Kaneko ,  Hirofumi Ihara

发明人： Seiichi Matsumoto ,  Osamu Sukegawa ,  Wakahiko Kaneko ,  Hirofumi Ihara

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/1368 ,  H01L27/1244

摘要： In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

公开(公告)号：US6114184A

公开(公告)日：2000-09-05

申请号：US962299

申请日：1997-10-31

申请人： Seiichi Matsumoto ,  Osamu Sukegawa ,  Wakahiko Kaneko ,  Hirofumi Ihara

发明人： Seiichi Matsumoto ,  Osamu Sukegawa ,  Wakahiko Kaneko ,  Hirofumi Ihara

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/1368 ,  H01L27/1244

摘要： In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

摘要翻译： 在分别在信号线形成区域和像素电极形成区域上形成绝缘基板上的栅极绝缘层和信号线图案层和像素电极图案层的LCD器件的制造方法中， 蚀刻栅极绝缘层，信号线形成区域和像素电极形成区域之间的栅极绝缘层的一部分。

公开(公告)号：US6028650A

公开(公告)日：2000-02-22

申请号：US896609

申请日：1997-07-18

申请人： Syoichi Kuroha ,  Takahiko Watanabe ,  Wakahiko Kaneko ,  Osamu Sukegawa

发明人： Syoichi Kuroha ,  Takahiko Watanabe ,  Wakahiko Kaneko ,  Osamu Sukegawa

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

CPC分类号： G02F1/136213

摘要： In a liquid crystal display apparatus including a plurality of gate lines, a plurality of drain lines, and a plurality of pixels each including a liquid crystal cell having a pixel electrode connected to a storage capacitor and a switching element connected between the liquid crystal cell and one of the drain lines, a gate of the switching element is connected to one of the gate lines, and a capacitance of the storage capacitor is changed in accordance with a distance between said pixel and an input end of a corresponding one of the gate lines.

摘要翻译： 在包括多个栅极线，多个漏极线和多个像素的液晶显示装置中，每个像素包括具有连接到存储电容器的像素电极的液晶单元和连接在液晶单元和 一个漏极线，开关元件的栅极连接到一条栅极线，并且存储电容器的电容根据所述像素与对应的一条栅极线的输入端之间的距离而改变 。

公开(公告)号：US06674093B1

公开(公告)日：2004-01-06

申请号：US09695321

申请日：2000-10-25

申请人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

发明人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

IPC分类号： H01L29786

CPC分类号： H01L27/12 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.

摘要翻译： 沟道保护型有源矩阵基板，具有通过绝缘膜从一层到另一层隔离的栅电极，漏电极和像素电极。 有源矩阵基板由四个掩模制成。 栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层（图6的102）和TFF区域。 经由形成为上层的第一钝化膜（图6的105）由第一钝化膜（图6的105）形成漏极电极层（图6的106）。 在其上形成的第二钝化膜（图6的107）中，其穿过第一和第二钝化膜的开口以及通过第二钝化膜的开口。 布线连接层由作为最上层设置的ITO（图6的108）形成。 在像素电极中设置存储电容单元，该第一钝化膜和第二钝化膜夹在栅电极和形成为相对于栅电极的共层的电极层之间。

公开(公告)号：US08253898B2

公开(公告)日：2012-08-28

申请号：US11887236

申请日：2006-03-29

申请人： Ichiro Amimori ,  Wakahiko Kaneko ,  Satomi Suzuki ,  Hideki Kaneiwa

发明人： Ichiro Amimori ,  Wakahiko Kaneko ,  Satomi Suzuki ,  Hideki Kaneiwa

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02B5/3016

摘要： A novel transfer material is disclosed. The transfer material comprises, at least, a support, and, thereon, an optically uniaxial or biaxial anisotropic layer and a photosensitive polymer layer. A novel process for producing a liquid crystal cell substrate is also disclosed. The process comprises, at least, [1] laminating a transfer material as set forth in any one of claims 1 to 11 on a substrate; [2] removing the support from the transfer material laminated on the substrate; and [3] exposing the photosensitive polymer layer disposed on the substrate to light.

摘要翻译： 公开了一种新的转印材料。 转印材料至少包括载体，并且在其上具有光学单轴或双轴各向异性层和光敏聚合物层。 还公开了一种制造液晶单元基板的新颖方法。 该方法至少包括如下步骤：（1）将权利要求1至11中任一项所述的转印材料层压在基材上; [2]从层叠在基板上的转印材料除去支撑体; 和[3]将设置在基板上的光敏聚合物层曝光于光。

公开(公告)号：US07879634B2

公开(公告)日：2011-02-01

申请号：US12066558

申请日：2006-09-15

申请人： Wakahiko Kaneko ,  Ichiro Amimori ,  Hideki Kaneiwa

发明人： Wakahiko Kaneko ,  Ichiro Amimori ,  Hideki Kaneiwa

IPC分类号： H01L21/00 ,  G02F1/1335

CPC分类号： G02F1/13363 ,  G02F2001/133565 ,  G02F2413/09

摘要： A process for easy production of a liquid crystal cell substrate having a TFT driver element which contributes to reducing viewing angle dependence of color of a liquid crystal display device is provided: a process using a transfer material, more preferably, a process which comprises the following steps [1] to [4] in this order: [1] transferring on a TFT substrate a transfer material having a photosensitive polymer layer and an optically anisotropic layer on a temporary support; [2] separating the temporary support from the transfer material on the TFT substrate; [3] subjecting the transfer material to light exposure on the TFT substrate; and [4] removing unnecessary parts of the photosensitive polymer layer and the optically anisotropic layer on the substrate.

摘要翻译： 提供一种易于制造具有有助于降低液晶显示装置的颜色的视角依赖性的TFT驱动元件的液晶单元基板的方法：使用转印材料的方法，更优选包括以下步骤的方法 步骤[1]至[4]：[1]在TFT基板上在临时支撑体上转印具有光敏聚合物层和光学各向异性层的转印材料; [2]在TFT基板上分离临时支撑体与转印材料; [3]使转印材料在TFT基板上曝光; 和[4]去除基片上感光聚合物层和光学各向异性层的不必要部分。

公开(公告)号：US06891196B2

公开(公告)日：2005-05-10

申请号：US10617035

申请日：2003-07-11

申请人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

发明人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

IPC分类号： G02F1/1345 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.

摘要翻译： 通过绝缘膜在每一层隔离具有栅电极，漏电极和像素电极的沟道保护型有源矩阵基板。 有源矩阵基板由四个掩模制成。 栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层和TFF区域。 漏极电极层由第一钝化膜形成，第一钝化膜形成为上层。 在形成在第一钝化膜之上的第二钝化膜中，穿过第一和第二钝化膜的第一开口和通过第二钝化膜的第二开口。 由设置为最上层的ITO形成布线连接层。 夹持在栅电极和相对于栅电极形成为共层的电极层之间的第一和第二钝化膜的存储电容单元连接到像素电极。

公开(公告)号：US5677211A

公开(公告)日：1997-10-14

申请号：US626072

申请日：1996-04-01

申请人： Wakahiko Kaneko

发明人： Wakahiko Kaneko

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L21/86

CPC分类号： H01L29/66765 ,  H01L21/3003 ,  H01L29/78633 ,  H01L29/78669

摘要： In a method for manufacturing a thin film transistor, an upper portion of a channel region of an a--Si active layer is selectively etched using the source electrode and the drain electrode as a mask, so as to form a recess in the upper portion of the channel region of the active layer. Hydrogen plasma is irradiated to an exposed surface including a surface of the active layer, and succeedingly, an amorphous silicon film is deposited on the exposed surface including the surface of the active layer, and then patterned so as to form a light block film which also acts a protection layer.

摘要翻译： 在制造薄膜晶体管的方法中，使用源电极和漏电极作为掩模来选择性地蚀刻a-Si活性层的沟道区的上部，以在上部形成凹部 有源层的沟道区。 将氢等离子体照射到包括有源层的表面的露出表面，接着，将非晶硅膜沉积在包括有源层的表面的暴露表面上，然后图案化以形成光阻挡膜，该阻挡膜也 作为保护层。

公开(公告)号：US20100328589A1

公开(公告)日：2010-12-30

申请号：US12677230

申请日：2008-09-08

申请人： Wakahiko Kaneko ,  Koreshige Ito

发明人： Wakahiko Kaneko ,  Koreshige Ito

IPC分类号： G02F1/1333 ,  B32B3/02 ,  B32B38/00 ,  G03F7/20

CPC分类号： G02B5/201 ,  G02F1/133516 ,  G03F7/0007 ,  G03F7/40 ,  Y10T428/24488

摘要： A black matrix (10) is formed on a transparent substrate (3), and micro color filters (12) are formed to partially overlap on the black matrix (10). The thickness of the black matrix (10) is gradually increased from an opening rim (10a) thereof to a plane portion (10b) thereof. The plane portion (10b) has substantially uniform thickness. A cross-sectional line of the thickness increasing portion of the black matrix (10) has convex curve portions P1 and P3, and a concave curve portion P2. The thickness of the black matrix (10) is controlled such that the cross-sectional line of the thickness increasing portion is kept under a tangent line contacting with both the convex curve portions P1 and P3.

摘要翻译： 黑色矩阵（10）形成在透明基板（3）上，并且形成微滤色器（12）以在黑矩阵（10）上部分重叠。 黑矩阵（10）的厚度从其开口边缘（10a）逐渐增加到其平面部分（10b）。 平面部分（10b）具有基本均匀的厚度。 黑矩阵（10）的厚度增加部分的横截面线具有凸曲线部分P1和P3以及凹曲线部分P2。 控制黑矩阵（10）的厚度，使得厚度增加部分的横截面线保持在与两个凸曲面部分P1和P3接触的切线下方。