摘要:
An improved structure of a gas sensor designed to withstand physical impact which may result in damage such as cracks to a sensor element built in the gas sensor. Specifically, the gas sensor includes a buffer provided by a clearance between an air cover a porcelain insulator. The clearance is in a range of 1 to 2.5 mm at a minimum. The gas sensor may alternatively have a harder portion in the air cover which has a Vickers hardness of 200 to 400. The gas sensor may alternatively have a rigidity enhancer in the air cover which works to provides an increased rigidity to the air cover.
摘要:
An improved structure of a gas sensor designed to withstand physical impact which may result in damage such as cracks to a sensor element built in the gas sensor. Specifically, the gas sensor includes a buffer provided by a clearance between an air cover a porcelain insulator. The clearance is in a range of 1 to 2.5 mm at a minimum. The gas sensor may alternatively have a harder portion in the air cover which has a Vickers hardness of 200 to 400. The gas sensor may alternatively have a rigidity enhancer in the air cover which works to provides an increased rigidity to the air cover.
摘要:
The present invention relates to novel crystal forms of 4-{[4-({[4-(2,2,2-trifluoroethoxy)-1,2-benzisoxazol-3-yl]oxy}methyl)piperidin-1-yl]methyl}-tetrahydro-2H-pyran-4-carboxylic acid. More particularly, the invention relates to polymorph forms (Polymorph Form I or Polymorph Form II), and to processes for the preparation of, compositions containing and to uses of, such polymorph forms.
摘要:
Provided is a portable terminal equipment which can prevent operation keys from being increased and which is capable of reducing the numbers of pushing the operation keys down at the time of input of characters. The portable terminal equipment has a plurality of operation keys (10˜21) to which characters and functions are assigned are provided in an operation section to be capable of being pushed down, being released from being pushed down, and sliding, a touch sensor section (5) which detects each of the operation keys being pushed down and being released from being pushed down, a moving sensor (2) which detects the operation key sliding, and a control section (101) which executes a function assigned to the operation key, when the touch sensor section (5) detects the operation key being pushed down and then detects the operation key being released from being pushed down, and which makes a character assigned to the pushed down operation key be displayed in a display section (3), when the moving sensor (2) detects the operation key sliding while the touch sensor section (5) is detecting the operation key being pushed down.
摘要:
The present invention relates to a dielectric ceramic composition comprising a main component expressed by a general formula: (Ba1-x-ySrxCay)m(Ti1-zZrz)O3, a first subcomponent comprising Mg oxide, a second subcomponent comprising at least one kind of oxide selected from oxides of Mn and Cr, a third subcomponent comprising R oxide (note R is selected at least one kind from Y, La Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho and Yb), and a fourth subcomponent comprising an oxide including Si.
摘要:
A gas sensor is disclosed which attains high response speed, low power consumption, superior water splash resistance and a little setting direction dependency and setting angle dependency. In this gas sensor, a measured gas room is provided inside an inner cover, and gas passage holes for leading a measured gas in are provided on side surfaces of the inner cover and an outer cover. The gas passage holes provided on the outer cover are positioned much closer to a top end side than the gas passage hole provided closest to the top end side in the inner cover. Partitions disposed extendedly in an axial direction of the gas sensor are provided between the outer cover and the inner cover.
摘要:
A dielectric ceramic composition comprising BamTiO2+m (note that “m” satisfies 0.99≦m≦1.01) and BanZrO2+n (note that “n” satisfies 0.99≦n≦1.01), an oxide of Mg, an oxide of R (note that R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), an oxide of at least one element selected from Mn, Cr, Co and Fe, and an oxide of at least one element selected from Si, Li, Al, Ge and B. With respect to 100 moles of said BamTiO2+m, 35 to 65 moles of BanZrO2+n, 4 to 12 moles of an oxide of Mg, 4 to 15 moles of an oxide of R, 0.5 to 3 moles of an oxide of Mn, Cr, Co and Fe, and 3 to 9 moles of an oxide of Si, Li, Al, Ge and B are included therein.
摘要:
To provide a multilayer ceramic capacitor which has capacitance-temperature characteristics satisfying the X8R characteristic specified by the EIA standard and has capacitance with an excellent long-term stability.The object is achieved by a multilayer ceramic capacitor comprising a laminate including alternately stacked dielectric layers of a sintered compact composed of crystal particles of a dielectric porcelain composite and internal-electrode layers. The dielectric porcelain composite comprises a primary constituent containing barium titanate; a first accessory constituent composed of at least one of MgO, CaO, BaO, and SrO; a second accessory constituent containing silicon oxide as a major constituent; a third accessory constituent composed of at least one of V2O5, MoO3, and WO3; a fourth accessory constituent composed of an oxide of R1 (wherein R1 is at least one of Sc, Er, Tm, Yb, and Lu); a fifth accessory constituent composed of CaZrO3 or a combination of CaO and ZrO2; and a sixth accessory constituent composed of an oxide of R2 (wherein R2 is at least one of Y, Dy, Ho, Tb, Gd, and Eu). In the case of 100 moles of barium titanate, there are 0.1 to 3 moles of the first accessory constituent, 2 to 10 moles of the second accessory constituent, 0.01 to 0.5 moles of the third accessory constituent, 0.5 to 7 moles of the fourth accessory constituent (wherein the number of moles of the fourth accessory constituent is that of R1 alone), more than 0 but not more than 5 moles of the fifth accessory constituent, and more than 0 but not more than 9 moles of the sixth accessory constituent. The crystal particles constituting the dielectric layers have an average particle diameter of not less than 0.2 μm and less than or equal to 0.55 μm.
摘要:
A dielectric ceramic composition comprises a main component including BaTiO3, a first subcomponent including BaZrO3, a second subcomponent including an oxide of Mg, a third subcomponent including an oxide of rare earth, a fourth subcomponent including an oxide of at least one element selected from Mn, Cr, Co and Fe, and a fifth subcomponent including an oxide of at least one element selected from Si, Al, Ge, B and Li. At least a part of dielectric particles constituting the dielectric ceramic composition comprises a surface diffusion structure comprised of a central layer and a diffusion layer therearound. CR and CRmax, respectively defined as a concentration of said “R” in a proximity point to a boundary face of the dielectric particle and a maximum concentration of the “R” in the diffusion layer, satisfy a relation of CRmax/CR>1. Also, CM and CMmax, respectively defined as a concentration of said Mg in a proximity point to a boundary face of the dielectric particle and a maximum concentration of Mg in the diffusion layer, satisfy a relation of CMmax/CM>1.
摘要:
To provide an inspection method and an inspection apparatus that can easily measure a distribution of residual stress on a surface processed by shot peening, including a state of distribution in a depth direction of a material to be treated in a relatively short time without destroying the material to be treated.A coil provided in the inspection circuit is arranged on a surface processed by shot peening of the inspection target, an alternating current signal is input to the inspection circuit with changing a frequency so that frequency response characteristics of impedance of the inspection circuit is measured and acquired as inspection target data, and the inspection target data is compared to frequency response characteristics of impedance acquired from a sample of which a state of generation of residual stress is found.