公开(公告)号：US4903104A

公开(公告)日：1990-02-20

申请号：US376904

申请日：1989-07-05

申请人： Hiroji Kawai ,  Kenichi Taira

发明人： Hiroji Kawai ,  Kenichi Taira

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/7371

摘要： A heterojunction type bi-polar transistor which has a heterojunction in the boundary between an intrinsic base region and an external base region to thereby eliminate the periphery effect and accordingly obtain a high current amplification factor.

摘要翻译： 一种异质结型双极晶体管，其在本征基极区域和外部基极区域之间的边界具有异质结，从而消除周边效应，从而获得高电流放大系数。

公开(公告)号：US5124771A

公开(公告)日：1992-06-23

申请号：US647411

申请日：1991-01-29

申请人： Kenichi Taira ,  Ichiro Hase ,  Hiroji Kawai

发明人： Kenichi Taira ,  Ichiro Hase ,  Hiroji Kawai

IPC分类号： H01L29/68 ,  H01L21/331 ,  H01L21/334 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/76

CPC分类号： H01L29/66931 ,  H01L29/7606

摘要： A semiconductor device or a hot electron transistor being constructed such that an InAs base layer is sandwiched between a GaSb emitter barrier layer and a GaInAsSb-system collector barrier layer, which results in preventing hot electrons of unnecessarily high energy from being injected into the collector and an avalanche current from being generated, thereby making it possible to improve the saturation characteristics of the device.

摘要翻译： 一种半导体器件或热电子晶体管被构造成使得InAs基极层夹在GaSb发射极阻挡层和GaInAsSb系集电极势垒层之间，这导致防止不必要的高能量的热电子被注入到集电极中， 产生雪崩电流，从而可以提高器件的饱和特性。

公开(公告)号：US5613140A

公开(公告)日：1997-03-18

申请号：US320375

申请日：1994-10-11

申请人： Kenichi Taira

发明人： Kenichi Taira

IPC分类号： G06G7/00 ,  G02F3/00 ,  G06N99/00 ,  H01L21/20 ,  H01L27/15 ,  H01L29/06 ,  H01L29/66 ,  H01L29/80 ,  H01L31/0352 ,  H01L31/173 ,  H01L33/00

CPC分类号： H01L31/173 ,  B82Y10/00 ,  G02F3/00 ,  G06N99/002 ,  H01L31/0352

摘要： A novel quantum dot-tunnel device having a revolutionarily faster processing speed and higher processing precision than conventional computer computation, which device has an array consisting of a large number of quantum dots which confine electrons three-dimensionally, with the coupling among quantum dots, that is, the tunnel transition probability, being defined by controlling the positional relationship and the shape of the quantum dots in accordance with an algorithm of predetermined information processing, so that the algorithm is expressed in solid state rather than by a conventional computer program. The electron transition among quantum dots occurs instantaneously and wave mechanically with a strict precision, and the results of the information processing are expressed as a spatial distribution of electrons over the plurality of quantum dots. Data is written into the quantum dots by irradiating light (high energy) of a wavelength corresponding to the band gap energy, for example, to a specific region on the array, while data is read out by irradiating light (low energy) of a wavelength corresponding to the energy gap between a ground level of the valence band and a first excited level. Also, an information processing apparatus and method using the device.

摘要翻译： 一种新颖的量子点隧道装置，具有比常规计算机计算更快的处理速度和更高的处理精度，该装置具有由三维限制电子的大量量子点与量子点之间的耦合组成的阵列， 是通过根据预定信息处理的算法控制量子点的位置关系和形状来定义隧道转移概率，使得算法以固态而不是常规计算机程序表示。 量子点之间的电子跃迁立即发生并以严格的精度进行机械波动，信息处理的结果表示为多个量子点上的电子的空间分布。 通过将与带隙能量相对应的波长的光（高能量）例如照射到阵列上的特定区域来将数据写入量子点，同时通过照射波长的光（低能量）读出数据 对应于价带的地电位与第一激发电平之间的能隙。 另外，使用该装置的信息处理装置和方法。

公开(公告)号：US07098504B2

公开(公告)日：2006-08-29

申请号：US10149050

申请日：2001-09-28

申请人： Noriyuki Kawashima ,  Kenichi Taira

发明人： Noriyuki Kawashima ,  Kenichi Taira

IPC分类号： H01L29/76 ,  H01L29/788 ,  H01L29/94 ,  H01L29/30

CPC分类号： H01L21/28185 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/792

摘要： There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

公开(公告)号：US06525379B2

公开(公告)日：2003-02-25

申请号：US09919571

申请日：2001-07-31

申请人： Kazumasa Nomoto ,  Noriyuki Kawashima ,  Ichiro Fujiwara ,  Kenichi Taira

发明人： Kazumasa Nomoto ,  Noriyuki Kawashima ,  Ichiro Fujiwara ,  Kenichi Taira

IPC分类号： H01L2100

CPC分类号： H01L29/78645 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/12 ,  H01L29/66825 ,  H01L29/78648 ,  H01L29/7881

摘要： Provided are a memory device capable of accurately reading out data, a method of manufacturing the same, and an integrated circuit. A first control electrode substantially faces a second control electrode with a conduction region and a storage region in between. At the time of “the reading of data”, an electric potential is applied to the first control electrode. During “the reading of data”, a change in an electric potential between the conduction region and the storage region is prevented, and therefore, unintentional writing or erasing of information is prevented, so that written information can be accurately read out.

公开(公告)号：US6118686A

公开(公告)日：2000-09-12

申请号：US358411

申请日：1999-07-22

申请人： Kenichi Taira ,  Toshikazu Suzuki ,  Hideki Ono

发明人： Kenichi Taira ,  Toshikazu Suzuki ,  Hideki Ono

IPC分类号： H01L21/8247 ,  G11C11/00 ,  G11C11/34 ,  H01L27/10 ,  H01L29/06 ,  H01L29/788 ,  H01L29/792

CPC分类号： B82Y10/00 ,  G11C11/00 ,  G11C11/34 ,  G11C2211/5614 ,  G11C2216/08

摘要： A memory device for storing information includes a conductive layer functioning as a current passage, an information storing section, the information storing section comprising at least two quantum dot groups, including a plurality of quantum dots, and a plurality of barrier layers, the barrier layers confining charges in the quantum dots, the energy level localized in a quantum dot group nearer the conductive layer being higher than the energy level localized in another quantum dot group distant from the conductive layer, and a control electrode provided on the information storing section, on the opposite side from the conductive layer. Pulse voltages having different widths and different heights are applied between the conductive layer and the information storing section thereby transferring charge from the conductive layer and accumulating charge in different quantum dot groups in response to the widths and heights to store the information. The memory device can operate at a low voltage and can store multivalued information.

摘要翻译： 用于存储信息的存储器件包括用作当前通道的导电层，信息存储部分，信息存储部分包括至少两个包括多个量子点的量子点组和多个势垒层，阻挡层 限制电荷在量子点中，位于更靠近导电层的量子点组中的能级高于位于远离导电层的另一量子点组中的能级，以及设置在信息存储部分上的控制电极， 与导电层相对。 具有不同宽度和不同高度的脉冲电压被施加在导电层和信息存储部分之间，从而从导电层转移电荷，并响应于宽度和高度积累不同量子点组中的电荷以存储信息。 存储器件可以在低电压下操作并且可以存储多值信息。

公开(公告)号：US5671437A

公开(公告)日：1997-09-23

申请号：US766946

申请日：1996-12-16

申请人： Kenichi Taira

发明人： Kenichi Taira

IPC分类号： G06G7/00 ,  G02F3/00 ,  G06N99/00 ,  H01L21/20 ,  H01L27/15 ,  H01L29/06 ,  H01L29/66 ,  H01L29/80 ,  H01L31/0352 ,  H01L31/173 ,  H01L33/00

CPC分类号： H01L31/173 ,  B82Y10/00 ,  G02F3/00 ,  G06N99/002 ,  H01L31/0352

摘要： A novel quantum dot-tunnel device having a revolutionarily faster processing speed and higher processing precision than conventional computer computation, which device has an array consisting of a large number of quantum dots which confine electrons three-dimensionally, with the coupling among quantum dots, that is, the tunnel transition probability, being defined by controlling the positional relationship and the shape of the quantum dots in accordance with an algorithm of predetermined information processing, so that the algorithm is expressed in solid state rather than by a conventional computer program. The electron transition among quantum dots occurs instantaneously and wave mechanically with a strict precision, and the results of the information processing are expressed as a spatial distribution of electrons over the plurality of quantum dots. Data is written into the quantum dots by irradiating light (high energy) of a wavelength corresponding to the band gap energy, for example, to a specific region on the array, while data is read out by irradiating light (low energy) of a wavelength corresponding to the energy gap between a ground level of the valence band and a first excited level. Also, an information processing apparatus and method using the device.

摘要翻译： 一种新颖的量子点隧道装置，具有比常规计算机计算更快的处理速度和更高的处理精度，该器件具有由三维限制电子的大量量子点与量子点之间的耦合组成的阵列， 是通过根据预定信息处理的算法控制量子点的位置关系和形状来定义隧道转移概率，使得算法以固态而不是常规计算机程序表示。 量子点之间的电子跃迁立即发生并以严格的精度进行机械波动，信息处理的结果表示为多个量子点上的电子的空间分布。 通过将与带隙能量相对应的波长的光（高能量）例如照射到阵列上的特定区域来将数据写入量子点，同时通过照射波长的光（低能量）读出数据 对应于价带的地电位与第一激发电平之间的能隙。 另外，使用该装置的信息处理装置和方法。

公开(公告)号：US07485527B2

公开(公告)日：2009-02-03

申请号：US11456024

申请日：2006-07-06

申请人： Noriyuki Kawashima ,  Kenichi Taira

发明人： Noriyuki Kawashima ,  Kenichi Taira

IPC分类号： H01L21/336 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28185 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/792

摘要： There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

摘要翻译： 提供了一种在存储单元之间较少受到电特性差异的非易失性半导体存储装置。 设置在基板上的浮置栅极由载流子俘获效率不同的两种或更多种材料制成，以便累积载流子，从而将数据存储在浮置栅电极中。 因此，产生没有如此大的阈值电压变化的区域，并且将具有小变化的部分用作电路操作的余量，从而消除单元之间的差异并实现高速操作。

公开(公告)号：US20060252205A1

公开(公告)日：2006-11-09

申请号：US11456024

申请日：2006-07-06

申请人： Noriyuki Kawashima ,  Kenichi Taira

发明人： Noriyuki Kawashima ,  Kenichi Taira

IPC分类号： H01L21/336

CPC分类号： H01L21/28185 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/792

摘要： There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

摘要翻译： 提供了一种在存储单元之间较少受到电特性差异的非易失性半导体存储装置。 设置在基板上的浮置栅极由载流子俘获效率不同的两种或更多种材料制成，以便累积载流子，从而将数据存储在浮置栅电极中。 因此，产生没有如此大的阈值电压变化的区域，并且将具有小变化的部分用作电路操作的余量，从而消除单元之间的差异并实现高速操作。

公开(公告)号：US06410412B1

公开(公告)日：2002-06-25

申请号：US09663006

申请日：2000-09-15

申请人： Kenichi Taira ,  Noriyuki Kawashima ,  Takashi Noguchi ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Kenichi Taira ,  Noriyuki Kawashima ,  Takashi Noguchi ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L214763

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66757 ,  H01L29/7881 ,  Y10S438/927

摘要： Methods for fabricating memory devices having a multi-dot floating gate ensuring a desirable crystallization of a semiconductor film without ruining the flatness of the surface of the polycrystallized silicon layer and a tunnel oxide film, allowing desirable semiconductor dots to be produced, and allowing production of the memory devices having a multi-dot floating gate with ease and at low costs even when a substrate is made of glass or plastic. Such a method for fabricating memory devices includes steps for forming on a substrate a semiconductor film and treating said semiconductor film by a first laser annealing so as to have a polycrystalline structure; forming on the semiconductor film a semiconductor dot forming film having a non-stoichiometric composition with an excessive content of a semiconductor element; and dispersing semiconductor dots within the semiconductor dot forming film by a second laser annealing thereby to produce semiconductor dots; in which a pulse energy density of the laser used for the first laser annealing is larger than a pulse energy density of the laser used for the second laser annealing.

摘要翻译： 用于制造具有多点浮置栅极的存储器件的方法，其确保半导体膜的期望结晶，而不破坏多晶硅层的表面的平坦度和隧道氧化物膜，从而允许产生期望的半导体点，并且允许 存储器件具有多点浮置栅极，即使当衬底由玻璃或塑料制成时，其容易且成本低廉。 这种用于制造存储器件的方法包括以下步骤：在衬底上形成半导体膜并通过第一激光退火处理所述半导体膜以具有多晶结构; 在半导体膜上形成具有半导体元件含量过多的非化学计量组成的半导体点形成膜; 并通过第二激光退火将半导体点分散在半导体点形成膜内，从而产生半导体点; 其中用于第一激光退火的激光器的脉冲能量密度大于用于第二激光退火的激光器的脉冲能量密度。