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    Semiconductor device manufacturing apparatus and method with optical monitoring of state of processing chamber
    1.
    发明授权
    Semiconductor device manufacturing apparatus and method with optical monitoring of state of processing chamber 失效
    具有光学监测处理室状态的半导体器件制造装置及方法

    公开(公告)号：US5536359A

    公开(公告)日：1996-07-16

    申请号：US309409

    申请日：1994-09-20

    申请人： Hiroki Kawada ,  Kazue Takahashi ,  Manabu Edamura ,  Saburo Kanai ,  Naoyuki Tamura

    发明人： Hiroki Kawada ,  Kazue Takahashi ,  Manabu Edamura ,  Saburo Kanai ,  Naoyuki Tamura

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32862 ,  H01J37/32935 ,  H01J37/32972 ,  H01J2237/022

    摘要： A semiconductor device manufacturing apparatus and its method, measures the amount or chemical composition of reaction products adhering to or deposited on the inside of a processing chamber of the semiconductor device manufacturing apparatus, without exposing the chamber to the air. External light, such as infrared light, is introduced from a light introducing unit into the processing chamber. A light receiving unit provided outside the processing chamber receives light reflected from a specified location inside the processing chamber or light reflected from an arbitrary location inside the chamber. The received light is then subjected to spectrometry or photometry to judge how badly the chamber is contaminated and to judge the state of the process being carried out.

    摘要翻译： 一种半导体器件制造装置及其方法，用于测量粘附或沉积在半导体器件制造装置的处理室内部的反应产物的量或化学组成，而不将该室暴露于空气。 诸如红外光的外部光从光引入单元引入处理室。 设置在处理室外部的光接收单元接收从处理室内的指定位置反射的光或从室内的任意位置反射的光。 然后将接收的光进行光谱测定或光度测定，以判断室被污染的程度如何，并判断正在进行的过程的状态。

    Wafer processing apparatus capable of controlling wafer temperature
    2.
    发明申请
    Wafer processing apparatus capable of controlling wafer temperature 审中-公开
    能够控制晶片温度的晶片处理装置

    公开(公告)号：US20070240825A1

    公开(公告)日：2007-10-18

    申请号：US11812289

    申请日：2007-06-18

    申请人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

    发明人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109

    摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.

    摘要翻译： 在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。 调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。 在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理 可以通过执行所选择的处理来减少批次内的晶片温度变化。 所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

    Wafer processing apparatus capable of controlling wafer temperature
    3.
    发明申请
    Wafer processing apparatus capable of controlling wafer temperature 审中-公开
    能够控制晶片温度的晶片处理装置

    公开(公告)号：US20060042757A1

    公开(公告)日：2006-03-02

    申请号：US10927095

    申请日：2004-08-27

    申请人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

    发明人： Seiichiro Kanno ,  Manabu Edamura ,  Ryujiro Udo ,  Masatsugu Arai ,  Junichi Tanaka ,  Saburo Kanai ,  Ryoji Nishio ,  Tsunehiko Tsubone ,  Toru Aramaki

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109

    摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.

    摘要翻译： 在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。 调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。 在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理 可以通过执行所选择的处理来减少批次内的晶片温度变化。 所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

    Plasma treatment device
    5.
    发明授权
    Plasma treatment device 有权
    等离子体处理装置

    公开(公告)号：US06245202B1

    公开(公告)日：2001-06-12

    申请号：US09155906

    申请日：1998-10-08

    申请人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

    发明人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

    IPC分类号： C23C1434

    CPC分类号： H01J37/321 ,  C23C16/507 ,  H01L21/3065 ,  H05H1/46

    摘要： In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.

    摘要翻译： 在高频感应等离子体蚀刻装置中，馈送高频功率的天线与处理室之间的空间与具有适当厚度的绝缘材料绝缘，同时天线被保护免受等离子体或反应性 用于等离子体处理的气体和与等离子体接触的一侧的表面被绝缘材料如氧化铝和石英覆盖。 将绝缘材料和天线置于真空中。 由于包含绝缘材料和天线的处理室可以承受大气压力的压力差，所以绝缘材料所需要的就是其承受等离子体气氛的能力。 因此，可以使绝缘材料变薄，并且以高密度均匀地产生等离子体。 通过在天线及其周围环境之间尽可能小的间隙或通过使间隙的压力更接近处理室中的压力而将在天线处产生的热量散发到外部。 或者，可以将诸如He气体的非反应性热传递促进气体的几个Torr引入形成在天线周围的细小间隙中，以散发在天线处产生的热量。

    Plasma Processing Apparatus And Plasma Processing Method
    10.
    发明申请
    Plasma Processing Apparatus And Plasma Processing Method 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20090289035A1

    公开(公告)日：2009-11-26

    申请号：US12534491

    申请日：2009-08-03

    申请人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

    发明人： Saburo Kanai ,  Kazue Takahashi ,  Kouichi Okamura ,  Ryoji Hamasaki ,  Satoshi Ito

    IPC分类号： H01L21/3065 ,  C23C16/513

    CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table by electrostatic force, a specimen table cover arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface for cooling the specimen, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover.

    摘要翻译： 一种等离子体处理装置和方法，其包括真空处理室，等离子体产生单元，处理气体供应单元，样品台和真空泵送单元。 样本台包括用于通过静电力将样本保持在样品台的保持表面上的静电装置，设置在样本台周围的样本台盖以及第一和第二传热气体供应单元。 第一传热气体供给单元具有用于向试样保持面供给传热气体以冷却试样的主路径，第二传热气体供给单元具有从第一传热气体的主路径分支的分支路径 供应单元，用于将一部分传热气体供应到样品保持表面的外部与样品台盖之间的间隙。