公开(公告)号：US08507130B2

公开(公告)日：2013-08-13

申请号：US12452115

申请日：2008-06-30

申请人： Hiroki Kondo ,  Tsuyoshi Sasaki ,  Osamu Hiruta ,  Yuichi Itou ,  Chikaaki Okuda ,  Youji Takeuchi ,  Yoshio Ukyo

发明人： Hiroki Kondo ,  Tsuyoshi Sasaki ,  Osamu Hiruta ,  Yuichi Itou ,  Chikaaki Okuda ,  Youji Takeuchi ,  Yoshio Ukyo

IPC分类号： H01M10/0563 ,  H01M10/0561 ,  H01M10/056 ,  H01M10/36

CPC分类号： H01M10/36 ,  H01M4/485 ,  H01M4/5825 ,  H01M2300/0002

摘要： The present invention provides a water based lithium secondary battery that can inhibit deteriorations in capacity owing to charge-and-discharge operations and maintain a high capacity even after it is charged and discharged repeatedly. The water based lithium secondary battery includes a positive electrode, a negative electrode, a separator 4 sandwiched between these, and an aqueous electrolyte solution obtained by dissolving an electrolyte made of a lithium salt in a water based solvent. As the water based solvent, a pH buffer solution is employed. The buffer solution is obtained by dissolving an acid and its conjugate base's salt, a base and its conjugate acid's salt, a salt made from a weak acid and a strong base, a salt made from a weak base and a strong acid, or a salt made from a weak acid and a weak base in water.

摘要翻译： 本发明提供一种水性锂二次电池，其可以抑制由于充放电操作而引起的容量恶化，并且即使在重复充电和放电之后也能保持高容量。 水基锂二次电池包括正极，负极，夹在它们之间的隔板4和通过将由锂盐制成的电解质溶解在水性溶剂中而获得的水性电解液。 作为水溶剂，使用pH缓冲溶液。 缓冲溶液是通过将酸及其共轭碱的盐，碱及其共轭酸盐溶解，由弱酸和强碱制成的盐，由弱碱和强酸制成的盐或盐 由弱酸和弱碱在水中制成。

公开(公告)号：US20100136427A1

公开(公告)日：2010-06-03

申请号：US12452115

申请日：2008-06-30

申请人： Hiroki Kondo ,  Tsuyoshi Sasaki ,  Osamu Hiruta ,  Yuichi Itou ,  Chikaaki Okuda ,  Youji Takeuchi ,  Yoshio Ukyo

发明人： Hiroki Kondo ,  Tsuyoshi Sasaki ,  Osamu Hiruta ,  Yuichi Itou ,  Chikaaki Okuda ,  Youji Takeuchi ,  Yoshio Ukyo

IPC分类号： H01M6/04

CPC分类号： H01M10/36 ,  H01M4/485 ,  H01M4/5825 ,  H01M2300/0002

摘要： The present invention provides a water based lithium secondary battery that can inhibit deteriorations in capacity owing to charge-and-discharge operations and maintain a high capacity even after it is charged and discharged repeatedly. The water based lithium secondary battery includes a positive electrode, a negative electrode, a separator sandwiched between these, and an aqueous electrolyte solution obtained by dissolving an electrolyte made of a lithium salt in a water based solvent. As the water based solvent, a pH buffer solution is employed. The buffer solution is obtained by dissolving an acid and its conjugate base's salt, a base and its conjugate acid's salt, a salt made from a weak acid and a strong base, a salt made from a weak base and a strong acid, or a salt made from a weak acid and a weak base in water.

摘要翻译： 本发明提供一种水性锂二次电池，其可以抑制由于充放电操作而引起的容量恶化，并且即使在重复充电和放电之后也能保持高容量。 水基锂二次电池包括正电极，负电极，夹在它们之间的隔板和通过将由锂盐制成的电解质溶解在水基溶剂中而获得的水性电解液。 作为水溶剂，使用pH缓冲溶液。 缓冲溶液是通过将酸及其共轭碱的盐，碱及其共轭酸盐溶解，由弱酸和强碱制成的盐，由弱碱和强酸制成的盐或盐 由弱酸和弱碱在水中制成。

公开(公告)号：US20090042386A1

公开(公告)日：2009-02-12

申请号：US12232944

申请日：2008-09-26

申请人： Noriyoshi Shimizu ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki ,  Nobuyuki Nishikawa

发明人： Noriyoshi Shimizu ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki ,  Nobuyuki Nishikawa

IPC分类号： H01L21/44

CPC分类号： H01L21/76832 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

摘要翻译： 在半导体衬底上形成第一绝缘膜。 在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。 通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。 导电部件被埋在凹部中。 提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。

公开(公告)号：US07074160B1

公开(公告)日：2006-07-11

申请号：US10111379

申请日：2000-10-18

申请人： Daisuke Inoue ,  Hideki Yasue ,  Tadashi Tamura ,  Hiroki Kondo ,  Yuji Hattori ,  Tetsuo Hamajima

发明人： Daisuke Inoue ,  Hideki Yasue ,  Tadashi Tamura ,  Hiroki Kondo ,  Yuji Hattori ,  Tetsuo Hamajima

IPC分类号： B60K41/20

CPC分类号： B60W50/038 ,  B60K28/165 ,  B60W10/04 ,  B60W10/06 ,  B60W10/10 ,  B60W10/101 ,  B60W10/107 ,  B60W30/18109 ,  B60W30/1819 ,  B60W30/1884 ,  B60W2050/021 ,  B60W2520/26 ,  B60W2710/0616 ,  F16H59/54 ,  F16H61/12 ,  F16H61/143 ,  F16H61/662 ,  F16H2061/66218 ,  F16H2312/18 ,  F16H2342/044 ,  Y10T477/6203 ,  Y10T477/639 ,  Y10T477/6392 ,  Y10T477/6403 ,  Y10T477/6414 ,  Y10T477/78

摘要： A control device for a drive line of a vehicle, in which a drive line from a power source to drive wheel includes a wheel control for controlling the speed of the wheels, and a connection mechanism for increasing/decreasing a torque transmission capacity between the power source and the drive wheels. The control device includes a trouble detector for detecting that the wheel control is in a situation unable to control the speed of the wheels normally. A braking detector detects that a braking operation to brake the rotation of the wheels is executed. And, a torque interruption control reduces the torque transmission capacity by the connection mechanism, when it is detected by the trouble detector that the wheel control cannot control the speed of the wheels normally and when it is detected by the braking detector that the braking operation to brake the rotation of the wheels is executed.

摘要翻译： 一种用于车辆的驱动线的控制装置，其中从动力源到驱动轮的驱动线包括用于控制车轮速度的车轮控制，以及用于增加/减少动力之间的转矩传递容量的连接机构 来源和驱动轮。 该控制装置包括用于检测车轮控制处于无法正常控制车轮速度的情况下的故障检测器。 制动检测器检测到执行用于制动车轮旋转的制动操作。 并且，转矩中断控制通过连接机构降低转矩传递能力，当故障检测器检测到车轮控制器不能正常地控制车轮的转速时，当制动检测器检测到制动操作 执行制动轮的旋转。

公开(公告)号：US20060145348A1

公开(公告)日：2006-07-06

申请号：US11362872

申请日：2006-02-28

申请人： Noriyoshi Shimizu ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki ,  Nobuyuki Nishikawa

发明人： Noriyoshi Shimizu ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki ,  Nobuyuki Nishikawa

IPC分类号： H01L23/52

CPC分类号： H01L21/76832 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

公开(公告)号：US06750541B2

公开(公告)日：2004-06-15

申请号：US10127418

申请日：2002-04-23

申请人： Nobuyuki Ohtsuka ,  Noriyoshi Shimizu ,  Hisaya Sakai ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki

发明人： Nobuyuki Ohtsuka ,  Noriyoshi Shimizu ,  Hisaya Sakai ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki

IPC分类号： H01L2348

CPC分类号： H01L21/76849 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76855 ,  H01L21/76858 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a multi-layered wiring structure containing a copper layer, comprises a first insulating film formed over a semiconductor substrate, a first copper pattern buried in the first insulating film, a cap layer formed on the first copper pattern and the first insulating film and made of a substance a portion of which formed on the first copper pattern has a smaller electrical resistance value than a portion formed on the first insulating film, second insulating films formed on the cap layer, and a second copper pattern buried in a hole or a trench, which is formed in the second insulating films on the first copper pattern, and connected electrically to the first copper pattern via the cap layer.

摘要翻译： 一种具有包含铜层的多层布线结构的半导体器件，包括形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的第一铜图案，形成在第一铜图案上的帽层和第一绝缘层 由形成在第一铜图案上的部分的物质制成的薄膜比形成在第一绝缘膜上的部分的电阻值小，形成在盖层上的第二绝缘膜和埋在孔中的第二铜图案 或沟槽，其形成在第一铜图案上的第二绝缘膜中，并经由盖层与第一铜图案电连接。

公开(公告)号：US06459978B2

公开(公告)日：2002-10-01

申请号：US09853573

申请日：2001-05-14

申请人： Hiroji Taniguchi ,  Katsumi Kono ,  Kenji Matsuo ,  Hideki Yasue ,  Tadashi Tamura ,  Daisuke Inoue ,  Yoshiaki Yamamoto ,  Hiroki Kondo ,  Yuji Hattori ,  Syoichi Sayo

发明人： Hiroji Taniguchi ,  Katsumi Kono ,  Kenji Matsuo ,  Hideki Yasue ,  Tadashi Tamura ,  Daisuke Inoue ,  Yoshiaki Yamamoto ,  Hiroki Kondo ,  Yuji Hattori ,  Syoichi Sayo

IPC分类号： F16H5556

CPC分类号： F16H61/66259 ,  B60W10/107 ,  B60W10/184 ,  B60W30/18109 ,  B60W30/20 ,  B60W2520/26 ,  F16H59/54 ,  F16H61/66272 ,  F16H2061/66218 ,  Y10T477/6203 ,  Y10T477/62427

摘要： A method and apparatus for controlling a continuously variable transmission of a motor vehicle includes a controller that controls the speed ratio of the continuously variable transmission in accordance with a predetermined shift condition. The method and apparatus perform shift control in a specific manner during an operation of an anti-lock brake system, for example, by smoothing at least one of the rotational speed of the input shaft and the rotational speed of the output shaft, reducing a rate of change in the speed ratio during down shifting, restricting upshifting of the CVT, increasing an amount of hydraulic oil delivered from an oil pump, and/or increasing belt clamping force.

摘要翻译： 用于控制机动车辆的无级变速器的方法和装置包括：控制器，其根据预定的换档条件控制无级变速器的变速比。 该方法和装置例如通过平滑输入轴的转速和输出轴的转速中的至少一个来降低速率，从而在防抱死制动系统的操作期间以特定的方式进行换档控制 在下降换档期间变速比的变化，限制CVT升档，增加从油泵输送的液压油量和/或增加皮带夹紧力。

公开(公告)号：USD454842S1

公开(公告)日：2002-03-26

申请号：US29134430

申请日：2000-12-21

申请人： Norihiro Ohashi ,  Hiroki Kondo ,  Takayoshi Endo

设计人： Norihiro Ohashi ,  Hiroki Kondo ,  Takayoshi Endo

公开(公告)号：US20130333938A1

公开(公告)日：2013-12-19

申请号：US13983490

申请日：2012-02-17

申请人： Hiroki Kondo

发明人： Hiroki Kondo

IPC分类号： H05K9/00

CPC分类号： H05K9/009 ,  H01B7/04 ,  H01B7/183

摘要： A shielded cable includes: at least one conductor; an insulator with which a surface of the at least one conductor is coated, the insulator having a hardness of 10 or more and 90 or less; and a shield layer disposed on a periphery of the insulator, the shield layer being formed by braiding plated fibers.

摘要翻译： 屏蔽电缆包括：至少一根导体; 绝缘体，其中涂覆有至少一个导体的表面，所述绝缘体具有10以上且90以下的硬度; 以及设置在所述绝缘体的周围的屏蔽层，所述屏蔽层通过编织电镀纤维而形成。

公开(公告)号：US07042093B2

公开(公告)日：2006-05-09

申请号：US10352149

申请日：2003-01-28

申请人： Noriyoshi Shimizu ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki ,  Nobuyuki Nishikawa

发明人： Noriyoshi Shimizu ,  Yoshiyuki Nakao ,  Hiroki Kondo ,  Takashi Suzuki ,  Nobuyuki Nishikawa

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76832 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

摘要翻译： 在半导体衬底上形成第一绝缘膜。 在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。 通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。 导电部件被埋在凹部中。 提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。