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1.发明授权Method for forming thin film while providing cooling gas to rear surface of substrate 有权在向衬底的背面提供冷却气体的同时形成薄膜的方法公开(公告)号：US09045819B2
公开(公告)日：2015-06-02
申请号：US13132023
申请日：2009-12-10
申请人： Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Satoshi Shibutani , Sadayuki Okazaki , Yuko Ogawa , Daisuke Suetsugu
发明人： Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Satoshi Shibutani , Sadayuki Okazaki , Yuko Ogawa , Daisuke Suetsugu
CPC分类号： C23C14/042 , C23C14/14 , C23C14/24 , C23C14/243 , C23C14/541 , C23C14/562
摘要： Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.
摘要翻译： 在通过气体冷却确保足够的冷却性能的同时防止真空室中的真空度恶化。 在真空中设置基板21，将冷却体1设置在基板21的膜非形成面附近。通过在基板21的成膜面上沉积成膜材料而形成薄膜，同时 将冷却气体引入到基板21和冷却体1之间。此时，引入与成膜材料反应的气体作为冷却气体。
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2.发明授权公开(公告)号：US08668895B2
公开(公告)日：2014-03-11
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译： 在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。 金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。 金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度 预定时间。
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3.发明授权Lithium secondary battery manufacturing method comprising forming lithium metal layer and lithium secondary battery 有权锂二次电池的制造方法，包括形成锂金属层和锂二次电池公开(公告)号：US08603196B2
公开(公告)日：2013-12-10
申请号：US13057260
申请日：2009-07-31
申请人： Hiromasa Yagi , Kazuyoshi Honda
发明人： Hiromasa Yagi , Kazuyoshi Honda
CPC分类号： H01M4/134 , H01M4/0423 , H01M4/131 , H01M4/1391 , H01M4/1395 , H01M4/366 , H01M4/38 , H01M4/382 , H01M4/505 , H01M4/525 , H01M10/052 , H01M2004/027 , Y10T29/49108 , Y10T29/49115
摘要： A negative electrode active material layer 3 containing at least one element selected from the group consisting of silicon, germanium, and tin is formed on a negative electrode collector 1. A negative electrode 11 is prepared by forming a lithium metal layer on the negative electrode active material layer 3. Also prepared is a positive electrode 11 having a configuration in which a positive electrode active material layer 6 containing a composite oxide represented by a general formula Li1-xMO2, where 0.2≦x≦0.6, and M includes at least one transition metal selected from the group consisting of cobalt, nickel, and manganese, is formed on a positive electrode current collector 5. A lithium secondary battery 100 is assembled from the negative electrode 13, the positive electrode 11, and a separator 4.
摘要翻译： 在负极集电体1上形成含有选自硅，锗，锡中的至少一种元素的负极活性物质层3.负极11通过在负极活性物质上形成锂金属层 材料层3.还制备了正极11，其具有如下构造：其中含有由通式Li1-xMO2表示的复合氧化物的正极活性物质层6，其中0.2≤x≤0.6，和M包括至少一个转变 在正极集电体5上形成选自钴，镍和锰组成的金属。锂二次电池100由负极13，正极11和隔膜4组装。
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4.发明申请公开(公告)号：US20120121794A1
公开(公告)日：2012-05-17
申请号：US13384928
申请日：2010-07-02
申请人： Hiromasa Yagi , Kazuyoshi Honda
发明人： Hiromasa Yagi , Kazuyoshi Honda
CPC分类号： H01M4/139 , C23C14/14 , C23C14/545 , C23C14/562 , H01G11/22 , H01G11/50 , H01G11/86 , H01M4/0423 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： A manufacturing method according to the present invention includes a step of allowing lithium to deposit on a substrate provided with a layer capable of forming a compound together with lithium. A first beta ray and a second beta ray are emitted toward the substrate for irradiation before the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. The first beta ray and the second beta ray are emitted toward the substrate for irradiation after the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. A decrement in backscattering of the first beta ray before and after lithium deposition and a decrement in backscattering of the second beta ray before and after lithium deposition are calculated. The deposition step is controlled depending on the decrement in the backscattering of the first beta ray and the decrement in the backscattering of the second beta ray.
摘要翻译： 根据本发明的制造方法包括允许锂沉积在具有与锂一起形成化合物的层的基材上的步骤。 在沉积步骤之前，向衬底发射第一个β射线和第二个β射线，以便从衬底测量第一个β射线和第二个β射线的反向散射。 第一β射线和第二β射线在沉积步骤之后朝向衬底发射用于照射，以测量来自衬底的第一β射线和第二β射线的后向散射。 计算在锂沉积之前和之后第一次β射线的后向散射减少以及在锂沉积之前和之后的第二次β射线的后向散射的减小。 沉积步骤根据第一β射线的反向散射的减小和第二β射线的后向散射的减量来控制。
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公开(公告)号：US20110281029A1
公开(公告)日：2011-11-17
申请号：US13132023
申请日：2009-12-10
申请人： Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Satoshi Shibutani , Sadayuki Okazaki , Yuko Ogawa , Daisuke Suetsugu
发明人： Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Satoshi Shibutani , Sadayuki Okazaki , Yuko Ogawa , Daisuke Suetsugu
CPC分类号： C23C14/042 , C23C14/14 , C23C14/24 , C23C14/243 , C23C14/541 , C23C14/562
摘要： Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.
摘要翻译： 在通过气体冷却确保足够的冷却性能的同时防止真空室中的真空度恶化。 在真空中设置基板21，将冷却体1设置在基板21的膜非形成面附近。通过在基板21的成膜面上沉积成膜材料而形成薄膜，同时 将冷却气体引入到基板21和冷却体1之间。此时，引入与成膜材料反应的气体作为冷却气体。
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6.发明授权公开(公告)号：US09028922B2
公开(公告)日：2015-05-12
申请号：US13384928
申请日：2010-07-02
申请人： Hiromasa Yagi , Kazuyoshi Honda
发明人： Hiromasa Yagi , Kazuyoshi Honda
IPC分类号： H01M4/13 , H01G11/22 , H01M4/139 , H01G11/50 , H01G11/86 , H01M4/04 , C23C14/14 , C23C14/54 , C23C14/56
CPC分类号： H01M4/139 , C23C14/14 , C23C14/545 , C23C14/562 , H01G11/22 , H01G11/50 , H01G11/86 , H01M4/0423 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： A manufacturing method according to the present invention includes a step of allowing lithium to deposit on a substrate provided with a layer capable of forming a compound together with lithium. A first beta ray and a second beta ray are emitted toward the substrate for irradiation before the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. The first beta ray and the second beta ray are emitted toward the substrate for irradiation after the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. A decrement in backscattering of the first beta ray before and after lithium deposition and a decrement in backscattering of the second beta ray before and after lithium deposition are calculated. The deposition step is controlled depending on the decrement in the backscattering of the first beta ray and the decrement in the backscattering of the second beta ray.
摘要翻译： 根据本发明的制造方法包括允许锂沉积在具有与锂一起形成化合物的层的基材上的步骤。 在沉积步骤之前，向衬底发射第一个β射线和第二个β射线，以便从衬底测量第一个β射线和第二个β射线的反向散射。 第一β射线和第二β射线在沉积步骤之后朝向衬底发射用于照射，以测量来自衬底的第一β射线和第二β射线的后向散射。 计算在锂沉积之前和之后第一次β射线的后向散射减少以及在锂沉积之前和之后的第二次β射线的后向散射的减小。 沉积步骤根据第一β射线的反向散射的减小和第二β射线的后向散射的减量来控制。
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7.发明申请公开(公告)号：US20110136012A1
公开(公告)日：2011-06-09
申请号：US13057260
申请日：2009-07-31
申请人： Hiromasa Yagi , Kazuyoshi Honda
发明人： Hiromasa Yagi , Kazuyoshi Honda
CPC分类号： H01M4/134 , H01M4/0423 , H01M4/131 , H01M4/1391 , H01M4/1395 , H01M4/366 , H01M4/38 , H01M4/382 , H01M4/505 , H01M4/525 , H01M10/052 , H01M2004/027 , Y10T29/49108 , Y10T29/49115
摘要： A negative electrode active material layer 3 containing at least one element selected from the group consisting of silicon, germanium, and tin is formed on a negative electrode collector 1. A negative electrode 11 is prepared by forming a lithium metal layer on the negative electrode active material layer 3. Also prepared is a positive electrode 11 having a configuration in which a positive electrode active material layer 6 containing a composite oxide represented by a general formula Li1-xMO2, where 0.2≦x≦0.6, and M includes at least one transition metal selected from the group consisting of cobalt, nickel, and manganese, is formed on a positive electrode current collector 5. A lithium secondary battery 100 is assembled from the negative electrode 13, the positive electrode 11, and a separator 4.
摘要翻译： 在负极集电体1上形成含有选自硅，锗，锡中的至少一种元素的负极活性物质层3.负极11通过在负极活性物质上形成锂金属层 材料层3.还准备了正极11，其具有这样的构造，其中含有由通式Li1-xMO2表示的复合氧化物的正极活性物质层6，其中0.2＆lt; NlE; x＆lt; lE; 0.6和M包括至少一个 在正极集电体5上形成从钴，镍，锰构成的组中选择的过渡金属。从负极13，正极11和隔板4组装锂二次电池100。
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8.发明申请公开(公告)号：US20090280049A1
公开(公告)日：2009-11-12
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译： 在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。 金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。 金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度 预定时间。
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9.发明授权公开(公告)号：US08192864B2
公开(公告)日：2012-06-05
申请号：US12024790
申请日：2008-02-01
IPC分类号： H01M4/02
CPC分类号： H01M10/0525 , H01M4/0421 , H01M4/134 , H01M4/139 , H01M4/1395 , H01M2004/021 , H01M2004/027
摘要： In a method for examining a negative electrode of a battery, a total thickness of a current collector and an active material layer is measured. Then, in order to estimate a composition of the active material layer, the total resistivity of the current collector and the active material layer is measured.
摘要翻译： 在检查电池的负极的方法中，测定集电体和活性物质层的总厚度。 然后，为了估计活性物质层的组成，测定集电体和活性物质层的总电阻率。
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10.发明授权Method for forming active material on a current collector of negative electrode using feedback process with measuring collector 失效在负极集电体上用测量收集器进行反馈处理形成活性材料的方法公开(公告)号：US08148012B2
公开(公告)日：2012-04-03
申请号：US12024283
申请日：2008-02-01
IPC分类号： H01M4/02 , H01M4/13 , H01M4/58 , H01M4/66 , H01M4/68 , C23C16/00 , C23C16/24 , C23C16/10 , C23C14/10 , C23C8/00 , C23C10/10 , B05D3/00 , B05D3/06 , C08J7/18
摘要： In a method for manufacturing a negative electrode for a battery, an active material layer including a metallic element M and an element A that is at least any one of oxygen, nitrogen, and carbon is formed on a current collector. This active material layer is irradiated with an X-ray and at least one of intensity of a Kα ray of the element A and intensity of a Kα ray of the metallic element M in fluorescent X-rays generated from the active material layer is measured.
摘要翻译： 在电池用负极的制造方法中，在集电体上形成包含金属元素M和元素A的活性物质层，所述元素A为氧，氮，碳中的至少任一种。 用X射线照射该活性物质层，测定从活性物质层生成的荧光X射线中的元素A的Kα射线的强度和金属元素M的Kα射线的强度中的至少一个。
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