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    CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD
    5.
    发明申请
    CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD 有权
    二氧化碳回收系统和二氧化碳回收方法

    公开(公告)号：US20110135550A1

    公开(公告)日：2011-06-09

    申请号：US12900108

    申请日：2010-10-07

    申请人： Hiromitsu Nagayasu ,  Takashi Kamijo ,  Takahito Yonekawa ,  Hiroshi Tanaka ,  Shinya Kishimoto ,  Takuya Hirata ,  Tatsuya Tsujiuchi ,  Masaru Chiyomaru ,  Koji Nakayama ,  Masahiko Tatsumi ,  Yasuyuki Yagi ,  Kazuhiko Kaibara

    发明人： Hiromitsu Nagayasu ,  Takashi Kamijo ,  Takahito Yonekawa ,  Hiroshi Tanaka ,  Shinya Kishimoto ,  Takuya Hirata ,  Tatsuya Tsujiuchi ,  Masaru Chiyomaru ,  Koji Nakayama ,  Masahiko Tatsumi ,  Yasuyuki Yagi ,  Kazuhiko Kaibara

    IPC分类号： B01D53/62 ,  B01J15/00

    CPC分类号： B01D53/1406 ,  B01D53/1418 ,  B01D53/1475 ,  B01D53/62 ,  B01D2252/204 ,  B01D2257/504 ,  Y02A50/2342 ,  Y02C10/04 ,  Y02C10/06

    摘要： [Object] To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas.[Means of Solution] A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and at least one water-washing section 22. The CO2 absorbing section 21 allows flue gas 101 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The at least one water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with wash water 104A and 104B to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A. The regenerator 3 releases the CO2 from the basic amine compound absorbent 103 containing CO2 absorbed therein. This CO2 recovery system further includes an absorbent-treating section 23 disposed downstream of the at least one water-washing section 22 through which the decarbonated flue gas 101A flows. The absorbent-treating section 23 allows the decarbonated flue gas 101A to come into contact with circulating acidic water 105 to further reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A.

    摘要翻译： [目的]进一步降低残留在脱碳烟气中的碱性胺化合物的浓度。 [解决方案] CO 2回收系统包括吸收器2和再生器3.吸收器2包括CO 2吸收部分21和至少一个水洗部分22.CO 2吸收部分21允许烟道气101接触 碱性胺化合物吸收剂103使得碱性胺化合物吸收剂103吸收烟道气101中的CO 2。至少一个水洗部22允许其中CO 2的量在CO 2中减少的脱碳烟道气101A 吸收部分21与洗涤水104A和104B接触以减少夹带在脱碳烟气101A中的碱性胺化合物的量。 再生器3从其中吸收有CO 2的碱性胺化合物吸收剂103释放CO 2。 该CO 2回收系统还包括设置在至少一个水洗部分22的下游的吸收处理部分23，脱碳废气101A通过该处理部分流动。 吸收处理部23使脱碳酸烟气101A与循环的酸性水105接触，进一步减少夹带在脱碳酸烟气101A中的碱性胺化合物的量。

    Silicon carbide bipolar semiconductor device
    8.
    发明授权
    Silicon carbide bipolar semiconductor device 失效
    碳化硅双极半导体器件

    公开(公告)号：US08154026B2

    公开(公告)日：2012-04-10

    申请号：US12097019

    申请日：2006-12-13

    申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Tomonori Nakamura

    发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Tomonori Nakamura

    IPC分类号： H01L29/15

    CPC分类号： H01L29/1604 ,  H01L21/0465 ,  H01L21/047 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8613

    摘要： In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.

    摘要翻译： 在具有由SiC单晶衬底的表面生长的SiC外延层的具有第一导电类型的SiC漂移层和第二导电类型的SiC载流子注入层的台阶结构的SiC双极型半导体器件中，形成 防止堆垛层错及其面积的膨胀，从而防止正向电压的增加。 此外，提高了反向偏置中的耐受电压的特性。 在台面壁或台面壁和台面周边上形成正向操作降解防止层，以在空间上分离台面壁的表面与pn结界面。 在一个实施例中，正向操作降解防止层由在施加反向电压期间具有等电位的第二导电类型的碳化硅低电阻层构成。 在另一个实施方案中，正向操作降解防止层由第二导电类型的碳化硅导电层构成，并且在施加反向电压期间具有等电位的金属层形成在碳化硅导电层的表面上 。 在另一个实施方案中，正向操作降解防止层由高电阻非晶层组成。

    Silicon carbide Zener diode
    9.
    发明授权
    Silicon carbide Zener diode 失效
    碳化硅齐纳二极管

    公开(公告)号：US08093599B2

    公开(公告)日：2012-01-10

    申请号：US12597121

    申请日：2008-04-25

    申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

    发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

    IPC分类号： H01L29/866

    CPC分类号： H01L29/866 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/66106

    摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.

    摘要翻译： 一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层 形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层 导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

    Inkjet recording apparatus
    10.
    发明授权
    Inkjet recording apparatus 有权
    喷墨记录装置

    公开(公告)号：US08079698B2

    公开(公告)日：2011-12-20

    申请号：US11782725

    申请日：2007-07-25

    申请人： Koji Nakayama

    发明人： Koji Nakayama

    IPC分类号： B41J2/01

    CPC分类号： B41J29/17 ,  B41J11/0015 ,  B41J11/007

    摘要： There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.

    摘要翻译： 公开了一种喷墨记录装置，其包括进料装置，去除剂和喷墨头。 馈送装置沿着通过去除区域的馈送路径馈送记录介质。 反向进给表面的一部分与喷墨头相对并且沿着进给路径延伸，并且在垂直方向上看去除区域位于相对输送表面下方和相对进给表面内。 在记录介质通过进给装置通过去除区域供给时，去除器从记录介质的表面去除异物。 喷墨头相对于记录介质被供给的进给方向设置在去除器的下游。 喷墨头具有其中喷嘴打开的喷墨表面，并且当记录介质沿着相对输送表面的至少一部分进给时，墨滴从喷嘴朝向记录介质的记录表面喷射。