摘要:
A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要:
A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要:
A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要:
The present invention is to allow rapid detection of such a defect as buried in a pixel positional deviation, expansion/contraction noise or sensing noise on an image. A relationship between an inspection reference pattern image and a pattern image to be inspected is identified during inspection to construct a mathematical model obtained by absorbing (applying fitting on) a pixel positional deviation, expansion/contraction noise or sensing noise on an image, and a defect is detected by comparing a new inspection reference pattern image (model image) obtained by simulating the mathematical model and a pattern image to be inspected.
摘要:
A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.
摘要:
A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.
摘要:
A method and an apparatus for irradiating a measurement sample with an energy beam, a pattern being formed in the measurement sample, providing an optical system for detecting transmitted energy beam or reflected energy beam from the measurement sample, obtaining a pattern image, and comparing design data of the pattern and an image of the obtained image pattern to inspect a defect of the pattern formed in the measurement sample, wherein the measurement sample is a so-called photomask, a design pattern produced in producing the photomask is used as the design data of the pattern, and, in a procedure of performing inspection by comparing the obtained image and the design data, the design data is converted into an image (hereinafter referred to as wafer image) by a proper method, the wafer image being formed through a stepper used for actually forming the pattern of the photomask on a wafer, the obtained image actually measured is simultaneously converted into a wafer image by a proper method, and the defect is detected by comparing both wafer images to each other.
摘要:
In a defect inspecting apparatus, an illumination optical system illuminate a mask having a patterned surface, the optical beam passing through the mask is split into two beam components which is guided in first and second image pickup sensors. The pickup sensors has first and second pickup fields on the patterned surface, which pick up first and second parts of the mask image. The first and second pickup fields are parallel to each other and displaced from each other by (2n+1)×d/2 in the longitudinal direction thereof, where d denotes a longitudinal dimension of each pixel image in the first and second pick up fields and n denotes an integer equal to or larger than 0. The first and second parts of the mask image are merged to form a pattern image, and a defect in the mask is detected on the basis of the pattern image.
摘要:
A defect inspection method comprises irradiating a sample including a pattern under inspection with light, acquiring measurement pattern data of the pattern based on intensity of light reflected by the sample, generating conversion data including pixel data corresponding to the measurement pattern data from design data of the sample, applying FIR filter process to the conversion data, reconstructing the conversion data by replacing pixel data having value not larger than first reference value with first pixel data, replacing pixel data having value larger than second reference value larger than first reference value with second pixel data having value larger than first pixel data, replacing pixel data having value larger than first reference value and less than second reference value with third pixel data having value between the value of first and second pixel data, the pixel data having larger value being replaced with third pixel data having higher value.
摘要:
A photomask defect inspection method is provided by which defects of pin holes with the diameter equal to or less than 0.35 .mu.m can be detected with certainty. According to the inspection method, a pattern whose image is projected onto an imaging position by the use of illumination light (P1) for exposure consists of light transmitting portions (41) formed on a glass base (2) and light intercepting portions (42) which transmit part of the illumination light (P1) in such a way that a phase of the part of the illumination light (P1) passing through the light intercepting portions (42) is delayed with respect to a phase of the illumination light (P1) passing through the light transmitting portions (41). Slight detects in the photomask pattern are detected on the basis of a signal obtained by illuminating the pattern with inspection light having an inspection wavelength in which the transmittance (T) of the light intercepting portions (42) is defined in the following formula on the basis of a signal detection limit (Thr). When the signal detection limit (Thr) of an inspection circuit is calculated on the supposition that a signal level of the inspection light passing through the light transmitting portions (41) is equal to 1, the relational expression is T.gtoreq.(Thr-0.01).sup.1/1.8.