摘要:
A photomask defect inspection method is provided by which defects of pin holes with the diameter equal to or less than 0.35 .mu.m can be detected with certainty. According to the inspection method, a pattern whose image is projected onto an imaging position by the use of illumination light (P1) for exposure consists of light transmitting portions (41) formed on a glass base (2) and light intercepting portions (42) which transmit part of the illumination light (P1) in such a way that a phase of the part of the illumination light (P1) passing through the light intercepting portions (42) is delayed with respect to a phase of the illumination light (P1) passing through the light transmitting portions (41). Slight defects in the photomask pattern are detected on the basis of a signal obtained by illuminating the pattern with inspection light having an inspection wavelength in which the transmittance (T) of the light intercepting portions (42) is defined in the following formula on the basis of a signal detection limit (Thr). When the signal detection limit (Thr) of an inspection circuit is calculated on the supposition that a signal level of the inspection light passing through the light transmitting portions (41) is equal to 1, the relational expression is T.gtoreq.(Thr-0.01).sup.1/1,8.
摘要:
A pattern defect inspection apparatus according to this invention comprises an irradiation circuit for irradiating a substrate on which a given pattern is drawn, a detector circuit for detecting said irradiated pattern on said substrate, a bit pattern generating circuit for quantizing and generating previously given design data by processing said design data based on specified figure information to obtain bit pattern data composed of a finite number of pixels, and a comparator circuit for detecting defects on said substrate by comparing the detected data from said detecting means with the data from said bit pattern generating means, wherein the bit pattern generating circuit has an additional parameter conditioner for setting the dimension of each pixel to be quantized into said bit pattern data to the desired value.
摘要:
An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.
摘要:
In a method for aligning first and second objects relative to each other, according to this invention, the first and second objects are arranged opposite to each other, and are aligned in a direction perpendicular to their opposing direction. A grating pattern is formed, as an alignment mark, on the first object, and a checkerboard-like grating pattern is formed, also as an alignment mark, on the second object. A light beam emitted from an alignment light source is radiated onto the checkerboard-like grating pattern of the second object. The light beam diffracted by the checkerboard-like grating pattern is guided onto the grating pattern of the first object. The light beam diffracted by the grating pattern of the first object is detected by a detector. Since the light beam emitted from the light source is diffracted by the checkerboard-like grating pattern, a relative position of the first and second objects can be detected, irrespective of the distance therebetween. The first and second objects are accurately aligned, based on the detection result. This invention can be applied to a method for aligning a mask and a wafer when a circuit pattern pre-formed on the mask is to be transferred onto the wafer.
摘要:
Alignment marks are formed on the opposite surfaces of a photoelectric mask and a wafer. Each mark has a plurality of lines provided at a predetermined pitch. Widths of the lines of the photoelectric mask are progressively increased. On the while, widths of the lines of the wafer are progressively decreased. The marks of the wafer and the mask are opposite to each other such that lines of the maximum and minimum widths are opposite to each other. The overlapping area of the marks changes quadratically as a function of positional deviation between the mask and the wafer. When the mask is irradiated with ultraviolet light, X-rays are emitted from the mark on the wafer at an intensity corresponding to the overlapping area and are detected by an X-ray detector. The intensity of X-rays emitted changes quadratically as a function of deviation. The electron beam is scanned, and a detection signal is synchronously detected. The obtained PSD signal does not have a nonsensitive region and changes linearly as a function of deviation even if the beam scan width is narrow.
摘要:
A photomask defect inspection method is provided by which defects of pin holes with the diameter equal to or less than 0.35 .mu.m can be detected with certainty. According to the inspection method, a pattern whose image is projected onto an imaging position by the use of illumination light (P1) for exposure consists of light transmitting portions (41) formed on a glass base (2) and light intercepting portions (42) which transmit part of the illumination light (P1) in such a way that a phase of the part of the illumination light (P1) passing through the light intercepting portions (42) is delayed with respect to a phase of the illumination light (P1) passing through the light transmitting portions (41). Slight detects in the photomask pattern are detected on the basis of a signal obtained by illuminating the pattern with inspection light having an inspection wavelength in which the transmittance (T) of the light intercepting portions (42) is defined in the following formula on the basis of a signal detection limit (Thr). When the signal detection limit (Thr) of an inspection circuit is calculated on the supposition that a signal level of the inspection light passing through the light transmitting portions (41) is equal to 1, the relational expression is T.gtoreq.(Thr-0.01).sup.1/1.8.
摘要:
In a method of inspecting a sample on which a pattern relating to fabrication of a semiconductor device is formed, there are provided a light radiation unit, an acquiring unit, a storage unit, a template, a calculation unit, a correction unit, a defect detection unit and an output unit. Pinhole shape data to be detected of the pattern is stored in the template. The calculation unit calculates the degree of coincidence between the pinhole shape data stored in the template and the measured image data stored in the storage unit in units of a predetermined amount of data. The correction unit corrects a portion of the measured image data corresponding to a value of the degree of coincidence exceeding a second predetermined value in units of the predetermined amount of data, when the degree of coincidence obtained by the calculation unit has exceeded a first predetermined value, thereby correcting the portion of the measured image data including the detected pinhole. The defect detection unit detects a defect in the pattern on the basis of the corrected measured image data portion including the pinhole, which is obtained by the correcting unit, and the measured image data.
摘要:
A pattern defect inspection apparatus comprises a light irradiating portion, a light receive element, a light receive element amplifier, a preparation portion for preparing multi-valued design pattern image data, an offset adjusting portion, a gain adjusting portion, and an inspecting portion. The offset adjusting portion adjusts the offset of the light receive element amplifier such that measurement data of a translucent portion of a pattern on a sample surface corresponds to design pattern image data corresponding to the translucent portion, regarding the translucent portion as a non-transparent portion. The gain adjusting portion adjusts the gain of the light receive element amplifier such that measurement data of a transparent portion of the pattern on the sample surface corresponds to design pattern image data corresponding to the transparent portion.
摘要:
An image processing system is disclosed which includes: a control computer which has a CPU and a main memory therein; and an image memory section which is connected to the CPU through an interface and which has an image memory for digitally storing image data, a memory controller and an image processor. A memory area as part of the main memory is independently allocated to store as a register area data transferred through a privately leased data bus which bypasses the interface between the control computer and the image memory section. When random access operation of the image data with respect to the image memory is performed, the data transfer between the CPU and the image memory section can be performed through the memory area (register area) and the special data bus without going through the interface.
摘要:
A single light emitted from a laser source is split into multiple beams. The multiple beams are illuminated by a multi-beam scanner to scan a substrate of interest. An optical system is provided for focusing the multiple beams independently on the substrate and directing a reflected light or a transmitted light of the multiple beams on the substrate. Aperture regulating members are disposed at equal intervals corresponding to the interval between the multiple beams for controlling the multiple beams directed from the substrate by the optical system. The multiple beams passed through their respective aperture regulating members are received by an optical detector assembly which detect a change in the amount of the multiple beams. The substrate is continuously moved by a movable table on a plane substantially vertical to the multiple beams and in a direction arranged at substantially a right angle to the scanning direction of the multiple beams. Then, a scanned image is produced by an image processor from a signal output of the detector assembly and data of the coordinate location of the movable table and compared by a comparator with a corresponding reference image.