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    Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp
    5.
    发明授权
    Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp 有权
    半导体发光元件，半导体发光元件的制造方法以及灯

    公开(公告)号：US08436396B2

    公开(公告)日：2013-05-07

    申请号：US12993733

    申请日：2009-05-20

    申请人： Hironao Shinohara ,  Naoki Fukunaga

    发明人： Hironao Shinohara ,  Naoki Fukunaga

    IPC分类号： H01L33/00 ,  H01L29/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).

    摘要翻译： 本发明的半导体发光装置（1）包括：基板（101）; 通过在基板（101）上依次层叠n型半导体层（104），发光层（105）和p型半导体层（106）而形成的层叠半导体层（20）。 以及形成在所述p型半导体层（106）的上表面（106a）上的透光性电极层（109），其中，所述透光性电极层（109）含有掺杂剂元素，所述透光性电极内的所述掺杂剂元素的含量 层（109）朝向p型半导体层（106）和透光性电极层（109）的界面（109a）逐渐减小，在透光性电极层（109）中形成有构成 p型半导体层（106）从界面（109a）朝向透光性电极层（109）的内部扩散。

    Light-emitting device, manufacturing method thereof, and lamp
    9.
    发明授权
    Light-emitting device, manufacturing method thereof, and lamp 有权
    发光装置及其制造方法和灯

    公开(公告)号：US08124992B2

    公开(公告)日：2012-02-28

    申请号：US12199723

    申请日：2008-08-27

    申请人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

    发明人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0091

    摘要： The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

    摘要翻译： 本发明提供一种发光器件，其包括依次层叠的n型半导体层，发光层，p型半导体层和氧化钛系导电膜层，其中，所述氧化钛系导电性 膜层包括作为光提取层的第一层和作为电流扩散层的第二层，第二层布置在第一层的p型半导体层侧，制造发光器件的方法和 一盏灯。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP 有权
    半导体发光元件，制造半导体发光元件的方法及灯

    公开(公告)号：US20110068349A1

    公开(公告)日：2011-03-24

    申请号：US12993733

    申请日：2009-05-20

    申请人： Hironao Shinohara ,  Naoki Fukunaga

    发明人： Hironao Shinohara ,  Naoki Fukunaga

    IPC分类号： H01L33/42 ,  H01L33/30 ,  H01L21/28

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).

    摘要翻译： 本发明的半导体发光装置（1）包括：基板（101）; 通过在基板（101）上依次层叠n型半导体层（104），发光层（105）和p型半导体层（106）而形成的层叠半导体层（20）。 以及形成在所述p型半导体层（106）的上表面（106a）上的透光性电极层（109），其中，所述透光性电极层（109）含有掺杂剂元素，所述透光性电极内的所述掺杂剂元素的含量 层（109）朝向p型半导体层（106）和透光性电极层（109）的界面（109a）逐渐减小，在透光性电极层（109）中形成有构成 p型半导体层（106）从界面（109a）朝向透光性电极层（109）的内部扩散。