公开(公告)号：US20110018022A1

公开(公告)日：2011-01-27

申请号：US12922422

申请日：2009-03-13

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.

摘要翻译： 本发明的半导体发光器件包括：衬底（101）; 包括形成在所述基板（101）上的发光层（105）的层叠半导体层（20）。 形成在层叠半导体层（20）的顶面上的透光性电极（109）。 以及形成在所述透光性电极（109）上的接合层（110）和接合焊盘电极（107），其中所述接合焊盘电极（107）具有包括金属反射层（107a）和接合层（107c）的层叠结构 ），并且金属反射层（107a）由选自Ag，Al，Ru，Rh，Pd，Os，Ir中的至少一种金属制成 和Pt，或含有金属的合金。

公开(公告)号：US20090205707A1

公开(公告)日：2009-08-20

申请号：US12388145

申请日：2009-02-18

申请人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

发明人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

IPC分类号： H01L31/00 ,  H01L21/306

CPC分类号： H01L31/022466 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  H01L31/186 ,  H01L31/1884 ,  Y02E10/544 ,  Y02P70/521

摘要： The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.

摘要翻译： 本发明的目的是提供一种在工业上有益且具有高的光转换效率的太阳能电池; 以及太阳能电池的制造方法。 并且本发明提供了一种太阳能电池，其包括基板，用于将接收的光转换为电力的发电层，透光性电极和另一电极，当光从其第一表面穿过各构件时，与第一 表面被定义为第二表面，发电层形成在基板的第二表面侧，透光性电极形成在发电层的一个表面上，另一个电极形成在发电的另一个表面上 层，其中所述透光性电极包含六方晶In2O3晶体。

公开(公告)号：US20110062479A1

公开(公告)日：2011-03-17

申请号：US12992232

申请日：2009-05-12

申请人： Susumu Sugano ,  Hisayuki Miki ,  Hironao Shinohara

发明人： Susumu Sugano ,  Hisayuki Miki ,  Hironao Shinohara

IPC分类号： H01L33/58 ,  H01L21/30

CPC分类号： H01L33/0095 ,  H01L24/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (30) so as to a main surface (20) of a substrate (2), a masking step of forming a protective film on the semiconductor layer (30), a semiconductor layer removal step of removing the protective film and the semiconductor layer (30) by laser irradiation to expose the substrate (2), a grinding step of reducing the thickness of the substrate (2), a polishing step of polishing the substrate (2), a laser processing step of providing processing marks to the inside of the substrate (2), a division step of creating a plurality of light-emitting devices (1) while forming a division surface of the substrate (2) to have a rough surface.

摘要翻译： 提供一种III族氮化物半导体发光器件的制造方法，其中可以获得内部量子效率和光提取效率优异的发光器件，III族氮化物半导体发光器件和 灯。 包括以半导体层（30）形成到衬底（2）的主表面（20）的外延步骤，在半导体层（30）上形成保护膜的掩蔽步骤，半导体层去除步骤 通过激光照射去除保护膜和半导体层（30）以露出基板（2），减小基板（2）的厚度的研磨步骤，抛光基板（2）的抛光步骤，激光 在衬底（2）的内部提供加工标记的处理步骤，在形成具有粗糙表面的衬底（2）的分割表面的同时产生多个发光器件（1）的划分步骤。

公开(公告)号：US20090078951A1

公开(公告)日：2009-03-26

申请号：US11994549

申请日：2006-06-30

申请人： Hisayuki Miki ,  Hironao Shinohara ,  Koji Kamei

发明人： Hisayuki Miki ,  Hironao Shinohara ,  Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0083

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

摘要翻译： 本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件，其具有优异的光提取效率。 本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体层结构， 设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

公开(公告)号：US07759690B2

公开(公告)日：2010-07-20

申请号：US11994549

申请日：2006-06-30

申请人： Hisayuki Miki ,  Hironao Shinohara ,  Koji Kamei

发明人： Hisayuki Miki ,  Hironao Shinohara ,  Koji Kamei

IPC分类号： H01L29/225 ,  H01L29/22 ,  H01L25/16 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0083

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

摘要翻译： 本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件，其具有优异的光提取效率。 本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体层结构， 设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

公开(公告)号：US20090152585A1

公开(公告)日：2009-06-18

申请号：US12065970

申请日：2006-09-05

申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

公开(公告)号：US20120001220A1

公开(公告)日：2012-01-05

申请号：US13255037

申请日：2010-03-05

申请人： Daisuke Hiraiwa ,  Hironao Shinohara

发明人： Daisuke Hiraiwa ,  Hironao Shinohara

IPC分类号： H01L33/22

CPC分类号： H01L33/145 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42

摘要： Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15). A positive electrode bonding pad (8) is provided in a position A corresponding to the insulation layer (15) provided on the p-type semiconductor layer (6), on a surface (7a) of the light-transmitting electrode (7). A sheet resistance of the n-type semiconductor layer (4) is lower than a sheet resistance of the light-transmitting electrode (7).

摘要翻译： 公开了一种III族氮化物半导体发光器件，其抑制透光电极和直接在电极下方的半导体层的电流集中，以提高发光效率，抑制电极中的光吸收或由于多次反射引起的光损失 提高光提取效率，具有优异的外量子效率和电特性。 其中n型半导体层（4），发光层（5）和p型半导体层（6）依次层叠的半导体层（20）形成在单晶底层（ 3），其形成在基板（11）上。 在p型半导体层（6）上形成透光电极（7）。 绝缘层（15）形成在p型半导体层（6）的至少一部分上，透光电极（7）形成为覆盖绝缘层（15）。 在透光电极（7）的表面（7a）上，在与p型半导体层（6）上设置的绝缘层（15）对应的位置A设置正极焊盘（8）。 n型半导体层（4）的薄层电阻低于透光电极（7）的薄层电阻。

公开(公告)号：US08927348B2

公开(公告)日：2015-01-06

申请号：US12992232

申请日：2009-05-12

申请人： Susumu Sugano ,  Hisayuki Miki ,  Hironao Shinohara

发明人： Susumu Sugano ,  Hisayuki Miki ,  Hironao Shinohara

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/16 ,  H01L33/20

CPC分类号： H01L33/0095 ,  H01L24/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (30) so as to a main surface (20) of a substrate (2), a masking step of forming a protective film on the semiconductor layer (30), a semiconductor layer removal step of removing the protective film and the semiconductor layer (30) by laser irradiation to expose the substrate (2), a grinding step of reducing the thickness of the substrate (2), a polishing step of polishing the substrate (2), a laser processing step of providing processing marks to the inside of the substrate (2), a division step of creating a plurality of light-emitting devices (1) while forming a division surface of the substrate (2) to have a rough surface.

摘要翻译： 提供一种III族氮化物半导体发光器件的制造方法，其中可以获得内部量子效率和光提取效率优异的发光器件，III族氮化物半导体发光器件和 灯。 包括以半导体层（30）形成到衬底（2）的主表面（20）的外延步骤，在半导体层（30）上形成保护膜的掩模步骤，半导体层去除步骤 通过激光照射去除保护膜和半导体层（30）以露出基板（2），减小基板（2）的厚度的研磨步骤，抛光基板（2）的抛光步骤，激光 在衬底（2）的内部提供加工标记的处理步骤，在形成具有粗糙表面的衬底（2）的分割表面的同时产生多个发光器件（1）的划分步骤。

公开(公告)号：US07847314B2

公开(公告)日：2010-12-07

申请号：US12065970

申请日：2006-09-05

申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

公开(公告)号：US08502254B2

公开(公告)日：2013-08-06

申请号：US13255037

申请日：2010-03-05

申请人： Daisuke Hiraiwa ,  Hironao Shinohara

发明人： Daisuke Hiraiwa ,  Hironao Shinohara

IPC分类号： H01L33/22

CPC分类号： H01L33/145 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42

摘要： Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15). A positive electrode bonding pad (8) is provided in a position A corresponding to the insulation layer (15) provided on the p-type semiconductor layer (6), on a surface (7a) of the light-transmitting electrode (7). A sheet resistance of the n-type semiconductor layer (4) is lower than a sheet resistance of the light-transmitting electrode (7).

摘要翻译： 公开了一种III族氮化物半导体发光器件，其抑制透光电极和直接在电极下方的半导体层的电流集中，以提高发光效率，抑制电极中的光吸收或由于多次反射引起的光损失 提高光提取效率，具有优异的外量子效率和电特性。 其中n型半导体层（4），发光层（5）和p型半导体层（6）依次层叠的半导体层（20）形成在单晶底层（ 3），其形成在基板（11）上。 在p型半导体层（6）上形成透光电极（7）。 绝缘层（15）形成在p型半导体层（6）的至少一部分上，透光电极（7）形成为覆盖绝缘层（15）。 在透光电极（7）的表面（7a）上，在与p型半导体层（6）上设置的绝缘层（15）对应的位置A设置正极焊盘（8）。 n型半导体层（4）的薄层电阻低于透光性电极（7）的薄层电阻。