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88 条记录 (耗时 0.029 秒)

    Light-emitting device, manufacturing method thereof, and lamp
    1.
    发明授权
    Light-emitting device, manufacturing method thereof, and lamp 有权
    发光装置及其制造方法和灯

    公开(公告)号：US08124992B2

    公开(公告)日：2012-02-28

    申请号：US12199723

    申请日：2008-08-27

    申请人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

    发明人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0091

    摘要： The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

    摘要翻译： 本发明提供一种发光器件，其包括依次层叠的n型半导体层，发光层，p型半导体层和氧化钛系导电膜层，其中，所述氧化钛系导电性 膜层包括作为光提取层的第一层和作为电流扩散层的第二层，第二层布置在第一层的p型半导体层侧，制造发光器件的方法和 一盏灯。

    Gallium nitride based compound semiconductor light-emitting device and method for manufacturing same
    6.
    发明授权
    Gallium nitride based compound semiconductor light-emitting device and method for manufacturing same 有权
    氮化镓系化合物半导体发光元件及其制造方法

    公开(公告)号：US08026118B2

    公开(公告)日：2011-09-27

    申请号：US12096827

    申请日：2006-12-12

    申请人： Hironao Shinohara ,  Hiroshi Osawa

    发明人： Hironao Shinohara ,  Hiroshi Osawa

    IPC分类号： H01L21/3065

    CPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 11; an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 that are composed of gallium nitride based compound semiconductors and formed on the substrate 11 in this order; a transparent positive electrode 16 that is formed on the p-type semiconductor layer 15; a positive electrode bonding pad 17 that is formed on the transparent positive electrode 16; a negative electrode bonding pad 18 that is formed on the n-type semiconductor layer 13; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surface 16a of the transparent positive electrode 16.

    摘要翻译： 本发明提供一种发光效率高的氮化镓系化合物半导体发光元件及其制造方法。 氮化镓系化合物半导体发光元件具备：基板11; 由氮化镓系化合物半导体构成的n型半导体层13，发光层14，p型半导体层15，依次形成在基板11上。 在p型半导体层15上形成的透明正极16; 形成在透明正极16上的正极焊盘17; 形成在n型半导体层13上的负极焊盘18; 以及形成在其上的无规凸部并且设置在透明正极16的表面16a的至少一部分上的不平坦表面。

    Gallium nitride-based compound semiconductor light-emitting device and production method thereof
    7.
    发明授权
    Gallium nitride-based compound semiconductor light-emitting device and production method thereof 有权
    氮化镓系化合物半导体发光元件及其制造方法

    公开(公告)号：US07875474B2

    公开(公告)日：2011-01-25

    申请号：US12065564

    申请日：2006-09-05

    申请人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

    发明人： Noritaka Muraki ,  Hironao Shinohara ,  Hiroshi Osawa

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/0062 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.

    摘要翻译： 本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。 从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15， 层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

    Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same
    8.
    发明申请
    Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same 有权
    基于氮化镓的复合半导体发光器件及其制造方法

    公开(公告)号：US20090309119A1

    公开(公告)日：2009-12-17

    申请号：US12096827

    申请日：2006-12-12

    申请人： Hironao Shinohara ,  Hiroshi Osawa

    发明人： Hironao Shinohara ,  Hiroshi Osawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 11; an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 that are composed of gallium nitride based compound semiconductors and formed on the substrate 11 in this order; a transparent positive electrode 16 that is formed on the p-type semiconductor layer 15; a positive electrode bonding pad 17 that is formed on the transparent positive electrode 16; a negative electrode bonding pad 18 that is formed on the n-type semiconductor layer 13; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surface 16a of the transparent positive electrode 16.

    摘要翻译： 本发明提供一种发光效率高的氮化镓系化合物半导体发光元件及其制造方法。 氮化镓系化合物半导体发光元件具备：基板11; 由氮化镓系化合物半导体构成的n型半导体层13，发光层14，p型半导体层15，依次形成在基板11上。 在p型半导体层15上形成的透明正极16; 形成在透明正极16上的正极焊盘17; 形成在n型半导体层13上的负极焊盘18; 以及形成在其上的无规凸部并且设置在透明正极16的表面16a的至少一部分上的不平坦表面。

    GaN based semiconductor light emitting device and lamp
    9.
    发明授权
    GaN based semiconductor light emitting device and lamp 有权
    GaN基半导体发光器件和灯

    公开(公告)号：US07968361B2

    公开(公告)日：2011-06-28

    申请号：US12295206

    申请日：2007-03-30

    申请人： Hiroshi Osawa ,  Hironao Shinohara

    发明人： Hiroshi Osawa ,  Hironao Shinohara

    IPC分类号： H01L21/66

    CPC分类号： H01L33/22 ,  H01L33/007

    摘要： A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

    摘要翻译： 提供一种发光特性和发光效率优异的氮化镓系化合物半导体发光元件的制造方法。 在这种制造氮化镓基化合物半导体发光器件的方法中，其是至少具有缓冲层的GaN基半导体发光器件的制造方法，n型半导体层，发光层和 p型半导体层在其上形成由凸形和凹形形成的不均匀图案的半透明基板上，缓冲层通过在具有枢转磁控管磁路和缓冲层的装置中进行的溅射法形成 含有AlN，ZnO，Mg或Hf。

    METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME
    10.
    发明申请
    METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME 审中-公开
    用于生产基于氮化镓的化合物半导体发光器件，基于氮化镓的化合物半导体发光器件的方法和使用其的灯

    公开(公告)号：US20100230714A1

    公开(公告)日：2010-09-16

    申请号：US12293639

    申请日：2007-03-23

    申请人： Hironao Shinohara ,  Noritaka Muraki ,  Hiroshi Osawa

    发明人： Hironao Shinohara ,  Noritaka Muraki ,  Hiroshi Osawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer 13, a light emitting layer 14, and a first p-type semiconductor layer 15 which are formed of a gallium nitride based compound semiconductor are laminated in this order on a substrate 11; and a second crystal growth step in which a second p-type semiconductor layer 16 formed of a gallium nitride based compound semiconductor is further laminated thereon; and also has an uneven pattern forming step in which an uneven pattern is formed on the surface of the first p-type semiconductor layer 15 before the first crystal growth step and after the second crystal growth step; and a heat treatment step in which a heat treatment is carried out after the uneven pattern forming step.

    摘要翻译： 一种氮化镓系化合物半导体发光元件的制造方法，其在发光效率方面优异且能够以低驱动电压工作，氮化镓系化合物半导体发光元件和使用该装置的灯 并且用于制造氮化镓基化合物半导体发光器件的方法包括：第一晶体生长步骤，其中n型半导体层13，发光层14和第一p型半导体层15是 由氮化镓系化合物半导体构成的层叠体依次层叠在基板11上; 以及第二晶体生长步骤，其中由氮化镓基化合物半导体形成的第二p型半导体层16进一步层压在其上; 并且还具有在第一晶体生长步骤之前和第二晶体生长步骤之后在第一p型半导体层15的表面上形成凹凸图案的不均匀图案形成步骤; 以及在不均匀图案形成工序之后进行热处理的热处理工序。