公开(公告)号：US07196357B2

公开(公告)日：2007-03-27

申请号：US11192727

申请日：2005-07-29

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

摘要翻译： 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US20110249975A1

公开(公告)日：2011-10-13

申请号：US13067608

申请日：2011-06-14

申请人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

发明人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H04B10/02 ,  H04B10/00

CPC分类号： H04B10/1149 ,  H04B10/116

摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

摘要翻译： 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

公开(公告)号：US20070110449A1

公开(公告)日：2007-05-17

申请号：US11619352

申请日：2007-01-03

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： H04B10/00 ,  H04B10/12

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

摘要翻译： 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US08680540B2

公开(公告)日：2014-03-25

申请号：US11619352

申请日：2007-01-03

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

摘要翻译： 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US20050274962A1

公开(公告)日：2005-12-15

申请号：US11192727

申请日：2005-07-29

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： G02B6/42 ,  G01J1/32 ,  H01L29/16 ,  H01L29/267 ,  H01L31/12 ,  H01L31/173 ,  H01S5/183

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

摘要翻译： 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US06960791B2

公开(公告)日：2005-11-01

申请号：US10764640

申请日：2004-01-26

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： G02B6/42 ,  G01J1/32 ,  H01L29/16 ,  H01L29/267 ,  H01L31/12 ,  H01L31/173 ,  H01S5/183

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

公开(公告)号：US20050002673A1

公开(公告)日：2005-01-06

申请号：US10809432

申请日：2004-03-26

申请人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

发明人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H04B10/11 ,  H04B10/112 ,  H04B10/00

CPC分类号： H04B10/1149 ,  H04B10/116

摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

摘要翻译： 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

公开(公告)号：US08254790B2

公开(公告)日：2012-08-28

申请号：US13067608

申请日：2011-06-14

申请人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomomori Hino ,  Hironobu Narui

发明人： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomomori Hino ,  Hironobu Narui

IPC分类号： H04B10/10

CPC分类号： H04B10/1149 ,  H04B10/116

摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

摘要翻译： 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

公开(公告)号：US20050040408A1

公开(公告)日：2005-02-24

申请号：US10917900

申请日：2004-08-13

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01S5/343 ,  H01L27/15 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是二甲基肼或氨（NH 3）。

公开(公告)号：US08030109B2

公开(公告)日：2011-10-04

申请号：US12540609

申请日：2009-08-13

申请人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

发明人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3235 ,  H01S5/343

摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

摘要翻译： 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。