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公开(公告)号：US08344414B2
公开(公告)日：2013-01-01
申请号：US12805086
申请日：2010-07-12
Applicant: Tsuyoshi Nagatake , Jugo Mitomo
Inventor： Tsuyoshi Nagatake , Jugo Mitomo
IPC: H01L33/00
Abstract: A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦a≦0.408), and has a thickness of from 10 nm to 20 nm both inclusive.
Abstract translation: 提供了能够将驱动电压保持为低的半导体发光器件。 半导体发光器件包括：n型覆层; 活性层 含有AlGaInP的p型覆层; 中间层 和含有GaP的接触层，其中中间层含有Ga1-aInaP（0.357＆nlE; a＆nlE; 0.408），并且其厚度为10nm至20nm。
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公开(公告)号：US08254790B2
公开(公告)日：2012-08-28
申请号：US13067608
申请日：2011-06-14
Applicant: Nobukata Okano , Yoshiaki Watanabe , Jugo Mitomo , Tomomori Hino , Hironobu Narui
Inventor： Nobukata Okano , Yoshiaki Watanabe , Jugo Mitomo , Tomomori Hino , Hironobu Narui
IPC: H04B10/10
CPC classification number: H04B10/1149 , H04B10/116
Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.
Abstract translation: 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。
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3.发明授权Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device 失效用于生长半导体层的方法，半导体发光元件的制造方法，半导体发光元件和电子器件公开(公告)号：US08242513B2
公开(公告)日：2012-08-14
申请号：US12121906
申请日：2008-05-16
Applicant: Akira Ohmae , Masayuki Arimochi , Jugo Mitomo , Noriyuki Futagawa , Tomonori Hino
Inventor： Akira Ohmae , Masayuki Arimochi , Jugo Mitomo , Noriyuki Futagawa , Tomonori Hino
IPC: H01L33/16
CPC classification number: H01L33/16 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L2224/48465
Abstract: Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.
Abstract translation: 本文公开了一种用于生长半导体层的方法，其包括在衬底的（1-100）平面上生长具有（11-22）或（10-13）面方向的六方晶体结构的半导体层的步骤 六方晶体结构。
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4.发明申请Long-wavelength semiconductor light emitting device and its manufacturing method 失效长波长半导体发光器件及其制造方法公开(公告)号：US20050040408A1
公开(公告)日：2005-02-24
申请号：US10917900
申请日：2004-08-13
Applicant: Tomonori Hino , Hironobu Narui , Jugo Mitomo
Inventor： Tomonori Hino , Hironobu Narui , Jugo Mitomo
CPC classification number: B82Y20/00 , H01L33/32 , H01S5/0425 , H01S5/18311 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/3202 , H01S5/3213 , H01S5/34306 , H01S5/34366 , Y10S438/935
Abstract: For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.
Abstract translation: 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是二甲基肼或氨（NH 3）。
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5.发明授权Semiconductor light emitting device, method of manufacturing same, and optical module 失效半导体发光器件，其制造方法和光学模块公开(公告)号：US08030109B2
公开(公告)日：2011-10-04
申请号：US12540609
申请日：2009-08-13
Applicant: Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
Inventor： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
IPC: H01L21/00
CPC classification number: B82Y20/00 , H01S5/22 , H01S5/3235 , H01S5/343
Abstract: A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.
Abstract translation: 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。
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Patent Agency Ranking
6.发明申请METHOD FOR GROWING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ELECTRONIC DEVICE 失效用于生长半导体层的方法，用于生产半导体发光元件的方法，半导体发光元件和电子器件公开(公告)号：US20080283846A1
公开(公告)日：2008-11-20
申请号：US12121906
申请日：2008-05-16
Applicant: Akira Ohmae , Masayuki Arimochi , Jugo Mitomo , Noriyuki Futagawa , Tomonori Hino
Inventor： Akira Ohmae , Masayuki Arimochi , Jugo Mitomo , Noriyuki Futagawa , Tomonori Hino
CPC classification number: H01L33/16 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L2224/48465
Abstract: Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.
Abstract translation: 本文公开了一种用于生长半导体层的方法，其包括在衬底的（1-100）平面上生长具有（11-22）或（10-13）面方向的六方晶体结构的半导体层的步骤 六方晶体结构。
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公开(公告)号：US07332744B2
公开(公告)日：2008-02-19
申请号：US10983927
申请日：2004-11-08
Applicant: Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
Inventor： Tomonori Hino , Hironobu Narui , Takayuki Kawasumi , Tsuyoshi Nagatake , Yuichi Kuromizu , Tadahiko Kawasaki , Noriko Kobayashi , Masaki Shiozaki , Jugo Mitomo , Michiko Komine
CPC classification number: B82Y20/00 , H01L33/145 , H01S5/0021 , H01S5/22 , H01S5/2215 , H01S5/2231 , H01S5/34326 , H01S2301/14 , H01S2301/18
Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.
Abstract translation: 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。
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8.发明授权Long-wavelength semiconductor light emitting device and its manufacturing method 失效长波长半导体发光器件及其制造方法公开(公告)号：US07026183B2
公开(公告)日：2006-04-11
申请号：US10917900
申请日：2004-08-13
Applicant: Tomonori Hino , Hironobu Narui , Jugo Mitomo
Inventor： Tomonori Hino , Hironobu Narui , Jugo Mitomo
IPC: H01L21/00
CPC classification number: B82Y20/00 , H01L33/32 , H01S5/0425 , H01S5/18311 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/3202 , H01S5/3213 , H01S5/34306 , H01S5/34366 , Y10S438/935
Abstract: For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.
Abstract translation: 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是例如二甲基肼或氨（NH 3）。
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公开(公告)号：US20110031528A1
公开(公告)日：2011-02-10
申请号：US12805086
申请日：2010-07-12
Applicant: Tsuyoshi Nagatake , Jugo Mitomo
Inventor： Tsuyoshi Nagatake , Jugo Mitomo
IPC: H01L33/34
Abstract: A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦a≦0.408), and has a thickness of from 10 nm to 20 nm both inclusive.
Abstract translation: 提供了能够将驱动电压保持为低的半导体发光器件。 半导体发光器件包括：n型覆层; 活性层 含有AlGaInP的p型覆层; 中间层 和含有GaP的接触层，其中中间层含有Ga1-aInaP（0.357＆nlE; a＆nlE; 0.408），并且其厚度为10nm至20nm。
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10.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND OPTICAL MODULE 失效半导体发光器件，其制造方法和光学模块公开(公告)号：US20100009485A1
公开(公告)日：2010-01-14
申请号：US12540609
申请日：2009-08-13
Applicant: Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
Inventor： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
IPC: H01L33/00
CPC classification number: B82Y20/00 , H01S5/22 , H01S5/3235 , H01S5/343
Abstract: A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.
Abstract translation: 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×10 18 cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。
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