公开(公告)号：US07414285B2

公开(公告)日：2008-08-19

申请号：US11870793

申请日：2007-10-11

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

IPC分类号： H01L27/108

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.

摘要翻译： 非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜 设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于 氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜， 第四绝缘膜和控制栅，并含有硅和氧。

公开(公告)号：US20080087937A1

公开(公告)日：2008-04-17

申请号：US11870793

申请日：2007-10-11

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.

摘要翻译： 非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜 设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于 氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜， 第四绝缘膜和控制栅，并含有硅和氧。

公开(公告)号：US07651914B2

公开(公告)日：2010-01-26

申请号：US12176559

申请日：2008-07-21

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

IPC分类号： H01L21/336 ,  H01L21/3205 ,  H01L21/28

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

摘要： A manufacturing method of a nonvolatile semiconductor memory device including: providing a first insulating film and a silicon film on a semiconductor substrate; providing a fifth insulating film containing silicon and oxygen on the silicon film; providing a second insulating film containing silicon and nitrogen on the fifth insulating film; providing a third insulating film on the second insulating film, the third insulating film is composed of a single-layer insulating film containing oxygen or multiple-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, and relative dielectric constant of the single-layer insulating film and the stacked insulating film being larger than relative dielectric constant of a silicon oxide film; providing a fourth insulating film containing silicon and nitrogen on the third insulating film; and providing a control gate above the fourth insulating film.

摘要翻译： 一种非易失性半导体存储器件的制造方法，包括：在半导体衬底上提供第一绝缘膜和硅膜; 在硅膜上提供含有硅和氧的第五绝缘膜; 在第五绝缘膜上提供含有硅和氮的第二绝缘膜; 在所述第二绝缘膜上提供第三绝缘膜，所述第三绝缘膜由包含氧或多层堆叠绝缘膜的单层绝缘膜组成，所述单层绝缘膜至少其顶层和底层上的膜含有氧，并且相对 单层绝缘膜和叠层绝缘膜的介电常数大于氧化硅膜的相对介电常数; 在所述第三绝缘膜上提供含有硅和氮的第四绝缘膜; 以及在所述第四绝缘膜上方设置控制栅极。

公开(公告)号：US20090011586A1

公开(公告)日：2009-01-08

申请号：US12176559

申请日：2008-07-21

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

IPC分类号： H01L21/28

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.

摘要翻译： 非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜 设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于 氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜， 第四绝缘膜和控制栅，并含有硅和氧。

公开(公告)号：US08637915B2

公开(公告)日：2014-01-28

申请号：US13007258

申请日：2011-01-14

申请人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

发明人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L21/28273 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

摘要翻译： 非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。 第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。 第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。 控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

公开(公告)号：USRE44630E1

公开(公告)日：2013-12-10

申请号：US13616208

申请日：2012-09-14

申请人： Tetsuya Kai ,  Ryuji Ohba ,  Yoshio Ozawa

发明人： Tetsuya Kai ,  Ryuji Ohba ,  Yoshio Ozawa

IPC分类号： H01L21/331

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/42332 ,  H01L29/7881

摘要： A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.

摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括设置在所述半导体衬底的表面上的隧道绝缘膜，所述隧道绝缘膜包括半导体晶粒，所述半导体晶粒包括在 隧道绝缘膜的两端部比隧道绝缘膜的其他部分所包含的半导体晶粒小的晶粒尺寸，隧道绝缘膜上设置的电荷存储层，设置在电荷存储层上的绝缘膜，以及控制 栅电极设置在绝缘膜上。

公开(公告)号：US08604536B2

公开(公告)日：2013-12-10

申请号：US12406841

申请日：2009-03-18

申请人： Katsuyuki Sekine ,  Yoshio Ozawa

发明人： Katsuyuki Sekine ,  Yoshio Ozawa

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/66833

摘要： A semiconductor device includes a memory cell transistor including a first lower insulating film provided on a semiconductor substrate, a first intermediate insulating film provided on the first lower insulating film, a first upper insulating film provided on the first intermediate insulating film, and a first gate electrode provided on the first upper insulating film, and a select transistor including a second lower insulating film provided on the semiconductor substrate, a second intermediate insulating film provided on the second lower insulating film, a second upper insulating film provided on the second intermediate insulating film, and a second gate electrode provided on the second upper insulating film, wherein trap density of the second intermediate insulating film is lower than that of the first intermediate insulating film.

摘要翻译： 半导体器件包括存储单元晶体管，其包括设置在半导体衬底上的第一下绝缘膜，设置在第一下绝缘膜上的第一中间绝缘膜，设置在第一中间绝缘膜上的第一上绝缘膜和第一栅极 设置在第一上绝缘膜上的电极和设置在半导体衬底上的第二下绝缘膜的选择晶体管，设置在第二下绝缘膜上的第二中间绝缘膜，设置在第二中间绝缘膜上的第二上绝缘膜 以及设置在第二上绝缘膜上的第二栅电极，其中第二中间绝缘膜的阱密度低于第一中间绝缘膜的陷阱密度。

公开(公告)号：US08324679B2

公开(公告)日：2012-12-04

申请号：US13430153

申请日：2012-03-26

申请人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

发明人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L21/28273 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

摘要翻译： 非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。 第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。 第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。 控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

公开(公告)号：US20120282773A1

公开(公告)日：2012-11-08

申请号：US13487280

申请日：2012-06-04

申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

IPC分类号： H01L21/302

CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。 该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面 对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

公开(公告)号：US08304352B2

公开(公告)日：2012-11-06

申请号：US13051031

申请日：2011-03-18

申请人： Masayuki Tanaka ,  Kazuhiro Matsuo ,  Yoshio Ozawa

发明人： Masayuki Tanaka ,  Kazuhiro Matsuo ,  Yoshio Ozawa

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28282 ,  H01L27/11568 ,  H01L27/11582

摘要： According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法，包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜 并且与半导体区域相邻，相对于氮化物膜进行氧化，将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜，并且使形成在该半导体层上的氮化膜的一部分 半导体区域作为电荷存储绝缘膜的至少一部分，在电荷存储绝缘膜上形成块绝缘膜，并在块绝缘膜上形成栅极电极膜。