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公开(公告)号：US4786145A
公开(公告)日：1988-11-22
申请号：US876922
申请日：1986-06-20
申请人： Hiroshi Demura , Akira Kawahashi , Yasuo Ohyama , Sadao Kokubu , Kouji Takizawa , Shigeru Iguchi
发明人： Hiroshi Demura , Akira Kawahashi , Yasuo Ohyama , Sadao Kokubu , Kouji Takizawa , Shigeru Iguchi
CPC分类号： B60R1/088
摘要： A liquid crystal antidazzle mirror for supplying a power to liquid crystal drive control circuit when a key plate is inserted into a key cylinder which comprises a key position detecting switch for detecting that the key plate is inserted into the key cylinder, and an initializing circuit for initializing the liquid crystal drive control circuit to either special mode of predetermined antidazzle or dazzle state upon receiving a detection signal of the key position detecting switch. Thus, the antidazzle mirror can automatically initialize the antidazzle mirror to either special mode of a predetermined antidazzle and dazzle states when power is supplied from a battery.
摘要翻译： 一种用于在键盘插入钥匙筒中的液晶驱动控制电路中提供电力的液晶防眩镜，所述钥匙筒包括用于检测所述钥匙板插入所述钥匙筒中的钥匙位置检测开关，以及初始化电路， 在接收到键位置检测开关的检测信号时，将液晶驱动控制电路初始化为预定的哒哒声或眩晕状态的特殊模式。 因此，当从电池供电时，防眩镜可以自动地将防眩镜初始化为预定哒唑的特殊模式和眩目状态。
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公开(公告)号：US4799769A
公开(公告)日：1989-01-24
申请号：US883881
申请日：1986-07-09
申请人： Hiroshi Demura , Akira Kawahashi , Kazumi Hayashi , Sadao Kokubu
发明人： Hiroshi Demura , Akira Kawahashi , Kazumi Hayashi , Sadao Kokubu
CPC分类号： B60R1/088
摘要： A liquid crystal antidazzle mirror for turning OFF a power of a liquid crystal drive control circuit by a power switch provided between the liquid crystal drive control circuit and a power source comprising a capacitor of a predetermined capacity disposed between the power switch and the liquid crystal drive control circuit and connected in parallel between power lines to supply power from the capacitor to at least a mode memory circuit in the liquid crystal drive control circuit for a predetermined time determined by the discharging characteristic of the capacitor when the power switch is opened. Thus, the mirror can reset the set mode of the antidazzle mirror to the used mode immediately before a power switch is opened when the power switch is closed within a predetermined time after the power switch is opened.
摘要翻译： 一种用于通过设置在液晶驱动控制电路和电源之间的电源开关来切断液晶驱动控制电路的电源的液晶防眩镜，该电源包括设置在电源开关和液晶驱动器之间的预定容量的电容器 并且在电源线之间并联连接，以在电源开关打开时由电容器的放电特性确定的预定时间内从电容器提供电力至至少液晶驱动控制电路中的模式存储器电路。 因此，在电源开关断开之后的规定时间内，当电源开关闭合时，镜子可以立即将电源开关置于电源开关之前，将安琪镜的设定模式复位到使用模式。
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公开(公告)号：US08633101B2
公开(公告)日：2014-01-21
申请号：US13499652
申请日：2010-09-02
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44 , H01L21/302 , H01L21/461 , H01L21/31
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。
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公开(公告)号：US4413424A
公开(公告)日：1983-11-08
申请号：US312075
申请日：1981-10-16
申请人： Hiroaki Sasaki , Testuya Inoue , Yoshiharu Mineo , Sei Iguchi , Kazuhide Makita , Hiroshi Arai , Hajime Itoh , Hisatoshi Ohta , Masahiro Inazu , Akira Kawahashi
发明人： Hiroaki Sasaki , Testuya Inoue , Yoshiharu Mineo , Sei Iguchi , Kazuhide Makita , Hiroshi Arai , Hajime Itoh , Hisatoshi Ohta , Masahiro Inazu , Akira Kawahashi
CPC分类号： G01C17/28
摘要： An azimuth determinating apparatus wherein the azimuth sensor is oriented to a specified direction, and the deviation of the two-component detection signals of the azimuth sensor from the pointing direction of the azimuth sensor are corrected by the adjustment of the two-component detection signals with the adjusting circuit in accordance with the indication on the amount of deviation indicated by the indicating circuit, whereby distortion of the output signals due to the residual magnetism of the azimuth sensor is corrected and the true azimuth can be determined.
摘要翻译： 方位确定装置，其中方位传感器被定向到指定的方向，并且方位传感器的双分量检测信号与方位传感器的指向方向的偏差通过两分量检测信号的调整被校正， 调整电路根据由指示电路指示的偏差量的指示，由此校正由于方位传感器的剩余磁性引起的输出信号的失真，并且可以确定真实的方位角。
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公开(公告)号：US20120217639A1
公开(公告)日：2012-08-30
申请号：US13499652
申请日：2010-09-02
IPC分类号： H01L23/482 , H01L21/74
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。
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公开(公告)号：US20100102332A1
公开(公告)日：2010-04-29
申请号：US12530901
申请日：2008-03-13
IPC分类号： H01L29/24 , H01L21/768
CPC分类号： H01L29/7813 , H01L21/0485 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/732 , Y10S438/931
摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。
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公开(公告)号：US08008180B2
公开(公告)日：2011-08-30
申请号：US12530901
申请日：2008-03-13
IPC分类号： H01L21/44
CPC分类号： H01L29/7813 , H01L21/0485 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/732 , Y10S438/931
摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。
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公开(公告)号：US06509610B2
公开(公告)日：2003-01-21
申请号：US09906825
申请日：2001-07-18
IPC分类号： H01L21336
CPC分类号： H01L29/0834 , H01L29/7397
摘要： A semiconductor device is formed such that a contact surface between a p-type high-concentration semiconductor region and an n-type high-concentration buffer region assumes a convexo-concave shape. This makes it possible to enlarge an area of the contact surface between the p-type high-concentration semiconductor region and the n-type high-concentration buffer region. As a result, holes are injected into an n-type low-concentration drift region from the p-type high-concentration semiconductor region with higher efficiency and with a less voltage drop between the pn-junction. Thus, effects of conductivity modulation can be achieved sufficiently and the on-resistance and the voltage drop of an IGBT can be lowered.
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公开(公告)号：US20120132927A1
公开(公告)日：2012-05-31
申请号：US13384850
申请日：2010-08-04
IPC分类号： H01L29/161 , H01L21/28
CPC分类号： H01L29/7802 , H01L21/0485 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7395 , H01L29/78
摘要： An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1−x−y)Si(s)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)2+0.1 (0≦x≦0.375) and an expression y=−2.504x2−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.
摘要翻译： 用于p型SiC半导体的欧姆电极，以及形成欧姆电极的方法。 欧姆电极具有欧姆电极层，其具有非晶结构，其由组成比在组成范围内的Ti（1-x-y）Si（s）C（y）三元膜制成 由表达式x = 0（0.35＆nlE; y＆nlE; 0.5）表示的两条线和两条曲线包围，表达式y = -1.120x + 0.5200（0.1667＆nlE; x＆amp; nlE; 0.375），表达式y = 1.778（x-0.375 ）2 + 0.1（0＆nlE; x＆nlE; 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0＆nlE; x＆nlE; 0.1667），并且排除由表达式x = 0表示的行。 欧姆层直接层压在p型SiC半导体的表面上。
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公开(公告)号：US20110287626A1
公开(公告)日：2011-11-24
申请号：US13146208
申请日：2010-01-29
IPC分类号： H01L21/283
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/1608
摘要： The invention provides an ohmic electrode of a p-type SiC semiconductor element, which includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The invention also provides a method of forming an ohmic electrode of a p-type SiC semiconductor element. The ohmic electrode includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The method includes forming a ternary mixed film that includes Ti, Si, and C in a manner such that an atomic composition ratio, Ti:Si:C is 3:1:2, on a surface of a p-type SiC semiconductor to produce a laminated film; and annealing the produced laminated film under vacuum or under an inert gas atmosphere.
摘要翻译： 本发明提供了一种p型SiC半导体元件的欧姆电极，其包括由Ti 3 SiC 2制成的欧姆电极层，其直接形成在p型SiC半导体的表面上。 本发明还提供了形成p型SiC半导体元件的欧姆电极的方法。 欧姆电极包括由Ti 3 SiC 2制成并且直接形成在p型SiC半导体的表面上的欧姆电极层。 该方法包括以使得在p型SiC半导体的表面上的原子组成比Ti:Si:C为3:1:2的方式形成包括Ti，Si和C的三元混合膜，以产生 层压膜; 并在真空或惰性气体气氛下退火生产的层压膜。
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