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公开(公告)号：US07154180B2
公开(公告)日：2006-12-26
申请号：US11106439
申请日：2005-04-15
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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公开(公告)号：US08350303B2
公开(公告)日：2013-01-08
申请号：US13286284
申请日：2011-11-01
IPC分类号： H01L27/085
CPC分类号： H01L29/458 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/4908 , H01L2224/73204
摘要： A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
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公开(公告)号：US20090134393A1
公开(公告)日：2009-05-28
申请号：US12090883
申请日：2006-12-01
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F2001/136295 , H01L29/458 , H01L29/4908
摘要： A thin-film transistor substrate in which an aluminum alloy film composing a source/drain wiring is directly connected with a transparent electrode. The thin-film transistor substrate includes a gate wiring, and source wiring and drain wiring, the gate wiring and the source and drain wiring being arranged orthogonally to each other. The single-layer aluminum alloy film composing the gate wiring and the single-layer aluminum alloy film composing the source wiring and the drain wiring are the same in composition. Furthermore, display devices can be mounted with the above thin-film transistor substrates.
摘要翻译： 其中构成源极/漏极布线的铝合金膜与透明电极直接连接的薄膜晶体管基板。 薄膜晶体管基板包括栅极布线，源极布线和漏极布线，栅极布线和源极和漏极布线彼此正交布置。 构成栅极布线的单层铝合金膜和构成源极布线和漏极布线的单层铝合金膜的组成相同。 此外，显示装置可以安装有上述薄膜晶体管基板。
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4.发明授权Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权源极/漏极，薄膜晶体管基板，其制造方法和显示装置公开(公告)号：US07411298B2
公开(公告)日：2008-08-12
申请号：US11461907
申请日：2006-08-02
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译： 在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。
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5.发明申请Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权源极/漏极，薄膜晶体管基板，其制造方法和显示装置公开(公告)号：US20070040172A1
公开(公告)日：2007-02-22
申请号：US11461907
申请日：2006-08-02
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译： 在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。
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公开(公告)号：US20050224795A1
公开(公告)日：2005-10-13
申请号：US11091442
申请日：2005-03-29
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/027 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/12 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L27/124
摘要： A display device includes an insulating substrate, a thin-film transistor arranged on the insulating substrate, a pixel electrode including a transparent electrode, and an aluminum alloy film as a connection wiring section for electrically connecting between the thin-film transistor and the pixel electrode. The aluminum alloy film is a multilayer aluminum alloy film including an aluminum alloy layer containing no nitrogen, and another aluminum alloy layer being arranged on the first layer and containing nitrogen. The nitrogen-containing layer ensures corrosion resistance against an alkaline solution. The nitrogen-containing aluminum alloy layer has been removed at least in a connection area with the pixel electrode so as to allow the pixel electrode to be directly connected to the first aluminum alloy layer.
摘要翻译： 显示装置包括绝缘基板，布置在绝缘基板上的薄膜晶体管，包括透明电极的像素电极和作为用于电连接薄膜晶体管和像素电极的连接布线部分的铝合金膜 。 铝合金膜是包括不含氮的铝合金层的多层铝合金膜，另一铝合金层设置在第一层上并含有氮。 含氮层确保了对碱性溶液的耐腐蚀性。 至少在与像素电极的连接区域中除去含氮铝合金层，以使像素电极直接连接到第一铝合金层。
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7.发明申请公开(公告)号：US20050184395A1
公开(公告)日：2005-08-25
申请号：US11106439
申请日：2005-04-15
IPC分类号： G02F1/1343 , C23C14/18 , C23C14/34 , G02F1/1335 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L27/13 , H01L29/45 , H01L29/49 , H01L29/786 , H01L23/48
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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公开(公告)号：US08088259B2
公开(公告)日：2012-01-03
申请号：US12349562
申请日：2009-01-07
CPC分类号： H01L29/458 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/4908 , H01L2224/73204
摘要： A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
摘要翻译： 其中Al合金膜和导电氧化物膜直接连接而不插入难熔金属并且部分或全部Al合金成分沉积或集中在Al合金膜和导电氧化物膜之间的接触界面处的显示装置。 Al合金膜含有0.1〜6at％的选自Ni，Ag，Zn，Cu和Ge中的至少一种元素，并且还含有1〜0.1at％的选自组中的至少一种元素 由Mg，Cr，Mn，Ru，Rh，Pd，Ir，Pt，La，Ce，Pr，Gd，Tb，Sm，Eu，Ho，Er，Tm，Yb，Lu和Dy组成，或2）0.1〜 ％的选自Ti，V，Zr，Nb，Mo，Hf，Ta和W中的至少一种元素作为合金成分。
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9.发明授权公开(公告)号：US07928575B2
公开(公告)日：2011-04-19
申请号：US12465836
申请日：2009-05-14
IPC分类号： H01L23/02
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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公开(公告)号：US07622809B2
公开(公告)日：2009-11-24
申请号：US11349520
申请日：2006-02-08
CPC分类号： H01L29/458 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/4908 , H01L2224/73204
摘要： A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
摘要翻译： 其中Al合金膜和导电氧化物膜直接连接而不插入难熔金属并且部分或全部Al合金成分沉积或集中在Al合金膜和导电氧化物膜之间的接触界面处的显示装置。 Al合金膜含有0.1〜6at％的选自Ni，Ag，Zn，Cu和Ge中的至少一种元素，并且还含有1〜0.1at％的选自组中的至少一种元素 由Mg，Cr，Mn，Ru，Rh，Pd，Ir，Pt，La，Ce，Pr，Gd，Tb，Sm，Eu，Ho，Er，Tm，Yb，Lu和Dy组成，或2）0.1〜 ％的选自Ti，V，Zr，Nb，Mo，Hf，Ta和W中的至少一种元素作为合金成分。
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