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公开(公告)号：US20060283089A1
公开(公告)日：2006-12-21
申请号：US11454796
申请日：2006-06-19
IPC分类号： E05F11/00
CPC分类号： E05F15/40 , E05Y2201/216 , E05Y2201/246 , E05Y2201/462 , E05Y2400/302 , E05Y2400/44 , E05Y2400/514 , E05Y2400/532 , E05Y2900/531
摘要： A control apparatus for opening/closing a vehicle door includes a door opening/closing mechanism for operating the vehicle door, a driving source for driving the door opening/closing mechanism, a connecting/disconnecting apparatus interposed between the door opening/closing mechanism and the driving source, and a controlling apparatus for controlling the connecting/disconnecting apparatus. The controlling apparatus for opening/closing the vehicle door includes a door movement-detecting apparatus for detecting a movement of the vehicle door. The controlling apparatus switches the connecting/disconnecting apparatus from a connected state to a disconnected state when the driving source is stopped during in an opening/closing operation of the vehicle door. The controlling apparatus performs a repetition mode, in which the connecting/disconnecting apparatus repeats the connected state and the disconnected state, when the movement of the vehicle door is detected in the disconnected state of the connecting/disconnecting apparatus.
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公开(公告)号：US07607963B2
公开(公告)日：2009-10-27
申请号：US11454796
申请日：2006-06-19
IPC分类号： E05F11/00
CPC分类号： E05F15/40 , E05Y2201/216 , E05Y2201/246 , E05Y2201/462 , E05Y2400/302 , E05Y2400/44 , E05Y2400/514 , E05Y2400/532 , E05Y2900/531
摘要： A control apparatus for opening/closing a vehicle door includes a door opening/closing mechanism for operating the vehicle door, a driving source for driving the door opening/closing mechanism, a connecting/disconnecting apparatus interposed between the door opening/closing mechanism and the driving source, and a controlling apparatus for controlling the connecting/disconnecting apparatus. The controlling apparatus for opening/closing the vehicle door includes a door movement-detecting apparatus for detecting a movement of the vehicle door. The controlling apparatus switches the connecting/disconnecting apparatus from a connected state to a disconnected state when the driving source is stopped during in an opening/closing operation of the vehicle door. The controlling apparatus performs a repetition mode, in which the connecting/disconnecting apparatus repeats the connected state and the disconnected state, when the movement of the vehicle door is detected in the disconnected state of the connecting/disconnecting apparatus.
摘要翻译： 用于打开/关闭车门的控制装置包括用于操作车门的门打开/关闭机构，用于驱动门打开/关闭机构的驱动源，插入在门打开/关闭机构和门开闭机构之间的连接/断开装置 驱动源，以及用于控制连接/断开装置的控制装置。 用于打开/关闭车门的控制装置包括用于检测车门的移动的门移动检测装置。 当在车门的打开/关闭操作期间驱动源停止时，控制装置将连接/断开装置从连接状态切换到断开状态。 控制装置执行重复模式，其中当在连接/断开装置的断开状态下检测到车门的移动时，连接/断开装置重复连接状态和断开状态。
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公开(公告)号：US5958333A
公开(公告)日：1999-09-28
申请号：US911673
申请日：1997-08-15
申请人： Junichi Matsunaga , Ryuji Ninomiya
发明人： Junichi Matsunaga , Ryuji Ninomiya
CPC分类号： B23K35/262 , C22C13/00
摘要： The present invention provides a soldering alloy which does not include harmful Pb or Cd and which has an excellent tensile strength, elongation value, and melting point property. The soldering alloy according to the present invention can thus solve the conventional environmental problems, set the soldering temperature at a low level to thereby restrict the thermal damage to a soldered portion, and prevent breaking of the soldering alloy due to a heat cycle, with an excellent tensile strength and elongation value. A tin-silver-based soldering alloy according to the present invention consist essentially of 3 to 4% by weight of Ag, 2 to 6% by weight of Bi, 2 to 6% by weight of In, and the balance being Sn.
摘要翻译： 本发明提供一种焊接合金，其不包含有害的Pb或Cd，并且具有优异的拉伸强度，伸长率和熔点性能。 因此，根据本发明的焊接合金可以解决常规的环境问题，将焊接温度设定在低水平，从而限制对焊接部分的热损伤，并且防止由于热循环导致的焊接合金的断裂， 优异的拉伸强度和伸长率值。 根据本发明的锡 - 银基焊接合金基本上由3至4重量％的Ag，2至6重量％的Bi，2至6重量％的In和余量的Sn组成。
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公开(公告)号：US5658528A
公开(公告)日：1997-08-19
申请号：US712678
申请日：1996-09-13
申请人： Ryuji Ninomiya , Junichi Matsunaga
发明人： Ryuji Ninomiya , Junichi Matsunaga
CPC分类号： B23K35/262 , C22C13/00
摘要： A lead-free solder consisting of 1 to 4 wt % of Ag, at least one of Bi and In in respective amounts meeting the conditions that the value of expression (1), A, is equal to or greater than 5.00 and that the value of expression (2), B, is equal to or less than 6.90, and Sn for the balance:A=[Ag wt %]+1.23 [Bi wt %]+0.52 [In wt %] (1)B=[Ag wt %]+1.19 [Bi wt %]+0.50 [In wt %] (2)This solder has a tensile strength and an elongation as high as those of conventional Pb--Sn solder without containing neither lead nor cadmium, which can cause environmental contamination.
摘要翻译： 由1至4重量％的Ag组成的无铅焊料，Bi和In中的至少一个分别满足表达式（1）的值A等于或大于5.00的条件，并且值 （2）中，B等于或小于6.90，余量为Sn：A = [Ag wt％] + 1.23 [Biwt％] + 0.52 [Inwt％]（1）B = [Ag 重量％] + 1.19 [Bi重量％] + 0.50 [In％（重量）]（2）该焊料的拉伸强度和伸长率高于常规Pb-Sn焊料，不含铅或镉， 污染。
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公开(公告)号：US5993736A
公开(公告)日：1999-11-30
申请号：US84552
申请日：1998-05-26
CPC分类号： C22C13/02 , B23K35/262
摘要： The present invention provides a lead-free tin-silver-based soldering alloy which has a low melting point equal to alloy H without containing harmful lead, expensive In or the like, and has excellent mechanical characteristics, that is, a tensile strength, an elongation value and heat fatigue characteristic as compared with alloy H, and thus, is applicable to soldering work at a low temperature and can make products which have a high reliability and long useful life or durability. The lead-free tin-silver-based soldering alloy consists essentially of Ag: 2 to 4% by weight, Zn: 0.5 to 2% by weight, Bi: 2 to 6% by weight, and the balance being substantially Sn.
摘要翻译： 本发明提供一种无铅锡 - 银基焊接合金，其具有等于合金H的低熔点而不含有害铅，昂贵的In等，并且具有优异的机械特性，即拉伸强度， 伸长率和热疲劳特性，因此适用于低温下的焊接工作，可以制造具有高可靠性，长使用寿命或耐久性的产品。 无铅锡银基焊接合金主要由Ag：2〜4重量％，Zn：0.5〜2重量％，Bi：2〜6重量％，余量基本上为Sn。
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公开(公告)号：US5718868A
公开(公告)日：1998-02-17
申请号：US688625
申请日：1996-07-30
申请人： Ryuji Ninomiya , Junichi Matsunaga
发明人： Ryuji Ninomiya , Junichi Matsunaga
CPC分类号： C22C13/00 , B23K35/262
摘要： Described is a lead-free tin-zinc-based soldering alloy made up of 7 to 9 wt. % of Zn and 0.1 to 0.5 wt. % of Cu or which further contains not more than 3 wt. % of Bi and, in either case, the balance being Sn except for inevitable impurities. The present invention has made it possible to provide a lead-free soldering alloy which has mechanical properties, such as tensile strength and elongation, comparable with those of conventional Pb--Sn soldering alloys without adding thereto lead which causes environmental pollution, has a melting point not higher than 200.degree. C., which is lower than the heat-resistant temperature of an IC package, and has a low cost.
摘要翻译： 描述了由7至9重量％的无铅锡 - 锌基焊料合金制成。 ％的Zn和0.1〜0.5wt。 ％的Cu，或者还含有不超过3wt。 Bi的百分比，在任一种情况下，余量为Sn，除了不可避免的杂质。 本发明使得可以提供具有拉伸强度和伸长率等机械性能的无铅焊接合金，与常规的Pb-Sn焊接合金相比，不添加引起环境污染的铅，具有熔点 不高于200℃，低于IC封装的耐热温度，成本低廉。
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7.发明授权High density integrated circuit device with MOS transistor and semiconductor region having potential wells 失效具有MOS晶体管和具有势阱的半导体区域的高密度集成电路器件
公开(公告)号：US4539580A
公开(公告)日：1985-09-03
申请号：US419068
申请日：1982-09-16
申请人： Junichi Matsunaga
发明人： Junichi Matsunaga
CPC分类号： H01L27/108 , H01L29/045
摘要： A semiconductor device includes a dynamic memory area formed in a semiconductor substrate and set in an inequilibrium potential state, and a plurality of MOS transistors which emit minority carriers or more than a predetermined number into said semiconductor substrate during operation in a saturation region. Each of the MOS transistors is so arranged that a prolonged line extending in a direction from the source region to the drain region may cross the dynamic memory area.
摘要翻译： 半导体器件包括形成在半导体衬底中并设置为不平衡电位状态的动态存储区域以及在饱和区域中操作期间将少数载流子或多于预定数量的多个MOS晶体管发射到所述半导体衬底中。 每个MOS晶体管被布置成使得在从源极区域到漏极区域的方向上延伸的延长线可以跨越动态存储区域。
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公开(公告)号：US4459325A
公开(公告)日：1984-07-10
申请号：US317616
申请日：1981-11-03
IPC分类号： H01L21/762 , B05D5/12 , B44C1/22 , C03C15/00 , H01L21/306
CPC分类号： H01L21/76216 , Y10S148/106 , Y10S148/117 , Y10S148/131 , Y10S148/15
摘要： A method for element isolation utilizing insulating materials in a semiconductor substrate is proposed. In this method an oxidizable material layer of polycrystalline silicon or the like is formed and then the oxidizable material layer is selectively oxidized, using an oxidation-proof mask thereby forming a thick oxide layer. Thereafter, the oxidation-proof mask is removed and unoxidized oxidizable material below the mask is perpendicularly etched off, leaving part of the oxidizable material which is then oxidized to form together with the thick oxide layer an element isolation. This invention further proposes a semi-conductor device having element isolation layer whose bird's beak is very small in length.
摘要翻译： 提出了利用半导体衬底中的绝缘材料进行元件隔离的方法。 在该方法中，形成多晶硅等的可氧化材料层，然后使用防氧化掩模选择性地氧化可氧化材料层，从而形成厚的氧化物层。 此后，去除防氧化掩模，并且将掩模下方的未氧化可氧化材料垂直地蚀刻掉，留下一部分可氧化材料，然后被氧化以与厚氧化物层一起形成元件隔离。 本发明还提出了一种半导体器件，其具有其鸟喙的长度非常小的元件隔离层。
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